BZX84C3V6-V-G

BZX84-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES 3 • Silicon planar power Zener diodes • The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance. • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 20421 PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Int. construction VALUE 2.4 to 75 2; 5 Pulse current Single UNIT V mA Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 ORDERING INFORMATION DEVICE NAME BZX84-V-G-series BZX84-V-G-series ORDERING CODE BZX84-V-series-G-18 BZX84-V-series-G-08 TAPED UNITS PER REEL 10 000 (8 mm tape on 13" reel) 3000 (8 mm tape on 7" reel) MINIMUM ORDER QUANTITY 10 000 15 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT 8.1 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER Power dissipation TEST CONDITION Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 SYMBOL Ptot VALUE 300 UNIT mW Thermal resistance junction to ambient air Junction temperature Storage temperature range RthJA Tj Tstg 420 150 - 65 to + 150 K/W °C °C Rev. 1.1, 29-Sep-11 Document Number: 83458 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 V MIN. BZX84C2V4-V-G BZX84C2V7-V-G BZX84C3V0-V-G BZX84C3V3-V-G BZX84C3V6-V-G BZX84C3V9-V-G BZX84C4V3-V-G BZX84C4V7-V-G BZX84C5V1-V-G BZX84C5V6-V-G BZX84C6V2-V-G BZX84C6V8-V-G BZX84C7V5-V-G BZX84C8V2-V-G BZX84C9V1-V-G BZX84C10-V-G BZX84C11-V-G BZX84C12-V-G BZX84C13-V-G BZX84C15-V-G BZX84C16-V-G BZX84C18-V-G BZX84C20-V-G BZX84C22-V-G BZX84C24-V-G BZX84C27-V-G BZX84C30-V-G BZX84C33-V-G BZX84C36-V-G BZX84C39-V-G BZX84C43-V-G BZX84C47-V-G BZX84C51-V-G BZX84C56-V-G BZX84C62-V-G BZX84C68-V-G BZX84C75-V-G G50 G51 G52 G53 G54 G55 G56 G57 G58 G59 G60 G61 G62 G63 G64 G65 G66 G67 G68 G69 G70 G71 G72 G73 G74 G75 G76 G77 G78 G79 G80 G81 G82 G83 G84 G85 G86 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 NOM. 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 TEST CURRENT IZT1 mA IZT2 REVERSE LEAKAGE CURRENT IR at VR μA V MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 DYNAMIC RESISTANCE ZZ at IZT1  MAX. 275 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 425 450 475 500 -9 -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 9 9 10 10 ZZK at IZT2 TEMPERATURE COEFFICIENT VZ at IZT1 10-4/°C MIN. MAX. -4 -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 11 12 12 12 Rev. 1.1, 29-Sep-11 Document Number: 83458 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com Vishay Semiconductors REVERSE LEAKAGE CURRENT IR at VR μA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 V MAX. 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 V MIN. BZX84B2V4-V-G BZX84B2V7-V-G BZX84B3V0-V-G BZX84B3V3-V-G BZX84B3V6-V-G BZX84B3V9-V-G BZX84B4V3-V-G BZX84B4V7-V-G BZX84B5V1-V-G BZX84B5V6-V-G BZX84B6V2-V-G BZX84B6V8-V-G BZX84B7V5-V-G BZX84B8V2-V-G BZX84B9V1-V-G BZX84B10-V-G BZX84B11-V-G BZX84B12-V-G BZX84B13-V-G BZX84B15-V-G BZX84B16-V-G BZX84B18-V-G BZX84B20-V-G BZX84B22-V-G BZX84B24-V-G BZX84B27-V-G BZX84B30-V-G BZX84B33-V-G BZX84B36-V-G BZX84B39-V-G BZX84B43-V-G BZX84B47-V-G BZX84B51-V-G BZX84B56-V-G BZX84B62-V-G BZX84B68-V-G BZX84B75-V-G H50 H51 H52 H53 H54 H55 H56 H57 H58 H59 H60 H61 H62 H63 H64 H65 H66 H67 H68 H69 H70 H71 H72 H73 H74 H75 H76 H77 H78 H79 H80 H81 H82 H83 H84 H85 H86 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.0 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 54.9 60.8 66.6 73.5 NOM. 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 57.1 63.2 69.4 76.5 TEST CURRENT IZT1 mA IZT2 DYNAMIC RESISTANCE ZZ at IZT1  MAX. 275 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 425 450 475 500 -9 -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 9 9 10 10 ZZK at IZT2 TEMPERATURE COEFFICIENT VZ at IZT1 10-4/°C MIN. MAX. -4 -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 11 12 12 12 Rev. 1.1, 29-Sep-11 Document Number: 83458 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 102 Ω 100 TJ = 25 °C 5 4 Vishay Semiconductors IF 10 1 10-1 10-2 10-3 10-4 10-5 0 18114 TJ = 100 °C rzj 3 2 33 27 22 18 15 12 10 6.8/8.2 6.2 TJ = 25 °C 10 5 4 3 2 1 0.2 0.4 0.6 0.8 1V 0.1 18119 2 5 1 2 5 VF 10 IZ 2 5 100 mA Fig. 1 - Forward Characteristics mW 500 Fig. 4 - Dynamic Resistance vs. Zener Current Ω 103 7 5 4 Tj = 25 °C 400 Rzj 3 2 Ptot 300 47 + 51 43 39 36 102 7 200 5 4 3 2 100 0 0 18115 100 200 °C 10 0.1 18120 2 3 45 1 2 345 Tamb IZ 10 mA Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Current K/W 103 1000 5 4 3 2 TJ = 25 °C rzj Rzth 5 4 3 2 Rzth = RthA x VZ x Δ VZ ΔTj 100 5 4 3 2 102 5 4 3 2 10 5 4 3 2 2.7 3.6 4.7 5.1 5.6 10 5 4 3 2 negative positive 1 0.1 18117 2 5 1 1 18121 2 3 45 1 2 5 10 IZ 2 5 100 mA 10 2 345 100 V VZ at IZ = 5 mA Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.1, 29-Sep-11 Document Number: 83458 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com Vishay Semiconductors mV/°C 100 IZ = 5 mA Ω 100 7 5 4 Rzj 3 2 Δ VZ ΔTj 80 60 10 7 5 4 3 2 40 20 Tj = 25 °C IZ = 5 mA 1 2 3 45 1 10 2 0 0 18125 345 100 V 20 40 60 80 100 V 18122 VZ VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage mV/°C 25 20 15 10 5 0 -5 1 18123 2 3 45 Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage V 9 8 Δ VZ ΔTj 5 mA IZ = 1 mA 20 mA 7 Δ VZ 6 5 4 3 2 1 0 -1 51 43 36 IZ = 2 mA 0 20 40 60 80 100 120 Tj 140 °C 10 2 345 100 V VZ 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 0.7 0.6 VZ at IZ = 5 mA 25 15 10 V 1.6 1.4 1.2 ΔVZ = Rzth x IZ Δ VZ 0.5 0.4 0.3 0.2 0.1 0 -1 - 0.2 0 18124 3.6 4.7 8 7 6.2 5.9 5.6 5.1 Δ VZ 1 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 20 40 60 80 100 120 140 C 18127 1 2 3 45 10 2 345 100 V Tj VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Fig. 9 - Change of Zener Voltage vs. Junction Temperature Rev. 1.1, 29-Sep-11 Document Number: 83458 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com Vishay Semiconductors mA 10 V 5 ΔVZ = Rzth x IZ 8 lZ Test current IZ 5 mA Tj = 25 °C 39 43 51 47 4 Δ VZ 3 IZ = 5 mA 6 2 4 1 IZ = 2 mA 2 0 0 0 18128 20 40 60 80 100 V 18113 0 10 20 30 40 50 60 70 80 90 100 V VZ VZ Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 50 Fig. 16 - Breakdown Characteristics Tj = 25 °C 2.7 3.9 5.6 3.3 4.7 6.8 8.2 40 lZ 30 20 Test current IZ 5 mA 10 0 0 18111 1 2 3 4 5 6 VZ 7 8 9 10 V Fig. 14 - Breakdown Characteristics mA 30 10 12 Tj = 25 °C lZ 20 15 18 22 Test 10 current IZ 5 mA 27 33 36 0 0 18112 10 20 VZ 30 40 V Fig. 15 - Breakdown Characteristics Rev. 1.1, 29-Sep-11 Document Number: 83458 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-G-Series www.vishay.com LAYOUT FOR R; JA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) Vishay Semiconductors 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.9 (0.035) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.550 ref. (0.022 ref.) 0.1 (0.004) max. 0.175 (0.007) 0.098 (0.004) 0.2 (0.008) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.45 (0.018) 1.43 (0.056) 0.35 (0.014) 1.20 (0.047) Foot print recommendation: 1 (0.039) 0.9 (0.035) 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.1, 29-Sep-11 Document Number: 83458 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2 (0.079) 0.95 (0.037) 0° t 0.5 (0.020) o8 ° Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000