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CNY17-2X007

CNY17-2X007

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    CNY17-2X007 - Optocoupler, Phototransistor Output, - Vishay Siliconix

  • 数据手册
  • 价格&库存
CNY17-2X007 数据手册
CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5300 VRMS A C NC i179004 1 2 3 6B 5C 4E • Long term stability • Industry standard dual-in-line package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS DESCRIPTION The CNY17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. • Underwriters lab file no. E52744 system code H or J • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending • BSI IEC 60950 IEC 60065 • FIMKO ORDER INFORMATION PART CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1X006 CNY17-1X007 CNY17-1X009 CNY17-2X006 CNY17-2X007 CNY17-2X009 CNY17-3X006 CNY17-3X007 CNY17-3X009 CNY17-4X006 CNY17-4X007 CNY17-4X009 Note For additional information on the available options refer to option information. REMARKS CTR 40 to 80 %, DIP-6 CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6 CTR 160 to 320 %, DIP-6 CTR 40 to 80 %, DIP-6 400 mil (option 6) CTR 40 to 80 %, SMD-6 (option 7) CTR 40 to 80 %, SMD-6 (option 9) CTR 63 to 125 %, DIP-6 400 mil (option 6) CTR 63 to 125 %, SMD-6 (option 7) CTR 63 to 125 %, SMD-6 (option 9) CTR 100 to 200 %, DIP-6 400 mil (option 6) CTR 100 to 200 %, SMD-6 (option 7) CTR 100 to 200 %, SMD-6 (option 9) CTR 160 to 320 %, DIP-6 400 mil (option 6) CTR 160 to 320 %, SMD-6 (option 7) CTR 160 to 320 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation t ≤ 10 µs VR IF IFSM Pdiss 6.0 60 2.5 100 V mA A mW TEST CONDITION SYMBOL VALUE UNIT Document Number: 83606 Rev. 1.5, 09-Nov-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 1 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation COUPLER Isolation test voltage between emitter and detector referred to climate DIN 50014, part 2, Nov. 74 Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Storage temperature Operating temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C RIO RIO Tstg Tamb Tsld t = 1.0 s VISO 5300 ≥ 7.0 ≥ 7.0 ≥ 0.4 175 ≥ 1012 ≥ 1011 - 55 to + 150 - 55 to + 100 260 Ω Ω °C °C °C VRMS mm mm mm t < 1.0 ms BVCEO BVEBO IC IC Pdiss 70 7.0 50 100 150 V V mA mA mW TEST CONDITION SYMBOL VALUE UNIT Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance OUTPUT Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Collector emitter, saturation voltage Coupling capacitance CNY17-1 Collector emitter, leakage current VCE = 10 V CNY17-2 CNY17-3 CNY17-4 VF = 10 mA, IC = 2.5 mA VCEsat CC ICEO ICEO ICEO ICEO 0.25 0.6 2.0 2.0 5.0 5.0 50 50 100 100 0.4 V pF nA nA nA nA VCE = 5.0 V, f = 1.0 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz CCE CCB CEB Rth 5.2 6.5 7.5 500 pF pF pF K/W IF = 60 mA IR = 10 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz VF VBR IR CO Rth 6.0 0.01 25 750 10 1.25 1.65 V V µA pF K/W TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART CNY17-1 VCE = 5.0 V, IF = 10 mA IC/IF VCE = 5.0 V, IF = 1 mA CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 Note Current transfer ratio and collector-emitter leakage current by dash number (Tamb °C). SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR MIN. 40 63 100 160 13 22 34 56 30 45 70 90 TYP. MAX. 80 125 200 320 UNIT % % % % % % % % SWITCHING CHARACTERISTICS PARAMETER Turn-on time Rise time Turn-off time Fall time Cut-off frequency TEST CONDITION IF = 10 mA, VCC = 5.0 V, RL = 75 Ω IF = 10 mA, VCC = 5.0 V, RL = 75 Ω IF = 10 mA, VCC = 5.0 V, RL = 75 Ω IF = 10 mA, VCC = 5.0 V, RL = 75 Ω IF = 10 mA, VCC = 5.0 V, RL = 75 Ω IF = 20 mA Turn-on time IF = 10 mA IF = 5 m A IF = 20 mA Rise time IF = 10 mA IF = 5 m A IF = 20 mA Turn-off time IF = 10 mA IF = 5 m A IF = 20 mA Fall time IF = 10 mA IF = 5 m A CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 PART SYMBOL ton tr toff tf fCO ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf MIN. TYP. 3.0 2.0 2.3 2.0 250 3.0 4.2 4.2 6.0 2.0 3.0 3.0 4.6 18 23 23 25 11 14 14 15 MAX. UNIT µs µs µs µs kHz µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs LINEAR OPERATION (WITHOUT SATURATION) SWITCHING OPERATION (WITH SATURATION) Document Number: 83606 Rev. 1.5, 09-Nov-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 3 CNY17 Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 (TA = 0 °C, VCE = 5 V) IC/IF = f (IF) Optocoupler, Phototransistor Output, with Base Connection IF R L = 75 Ω IC V CC = 5 V IC (%) IF 100 1 2 3 4 47 Ω 10 1 icny17_01 0.1 icny17_04 1 10 IF (mA) Fig. 1 - Linear Operation (without Saturation) Fig. 4 - Current Transfer Ratio vs. Diode Current 1000 IF 1 kΩ V CC = 5 V (TA = 25 °C, VCE = 5 V) IC/IF = f (IF) IC (%) IF 100 47 Ω 10 1 2 3 4 icny17_02 1 0.1 icny17_05 1 10 IF (mA) Fig. 2 - Switching Operation (with Saturation) Fig. 5 - Current Transfer Ratio vs. Diode Current 1000 (TA = - 25 °C, VCE = 5 V) IC/IF = f (IF) 1000 (TA = 50 °C, VCE = 5 V) IC/IF = f (IF) IC (%) IF IC (%) IF 100 1 2 3 4 100 1 2 3 4 10 10 1 0.1 icny17_03 1 1 10 icny17_06 0.1 1 10 IF (mA) IF (mA) Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current www.vishay.com 4 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors 1000 (TA = 75 °C, VCE = 5 V) IC/IF = f (IF) 40 IC = f (VCE) IF = 14 mA 30 IC (%) IF 100 IC 20 IF = 12 mA IF =10 mA IF = 7 mA 10 1 2 3 4 10 IF = 1 mA IF = 5 mA IF = 2 mA 10 15 1 0.1 icny17_07 0 1 10 0 icny17_10 5 IF (mA) VCE (V) Fig. 7 - Current Transfer Ratio vs. Diode Current Fig. 10 - Output Characteristics 1000 (IF = 10 mA, VCE = 5 V) IC/IF = f (T) 4 1.2 VF = f (IF) 25 °C 50 °C 75 °C 1.1 IC (%) IF 100 1 VF (V) 1.0 0.9 0 25 50 75 icny17_11 3 2 10 - 25 icny17_08 0.1 1 10 100 TA (°C) IF (mA) Fig. 11 - Forward Voltage Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature 30 25 20 15 IB = 20 µA 1 IC = f (VCE) IF = 0 IB = 40 µA VCE = 35 V ICEO = f (V,T) (IF = 0) ICEO (µA) IC (mA) 0.1 10 5 0 0 icny17_09 IB = 15 µA IB = 10 µA IB = IB = 0.01 VCE = 12 V 5 µA 2 µA 0.001 5 VCE (V) 10 15 icny17_12 0 25 50 75 °C TA 100 Fig. 9 - Transistor Characteristics Fig. 12 - Collector Emitter Off-state Current Document Number: 83606 Rev. 1.5, 09-Nov-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 5 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection 1.0 0.9 0.8 0.7 0.6 IF = 3 x IC VCEsat = f (IC) 1.0 0.9 0.8 0.7 VCEsat = f (IC) VCE sat (V) VCE sat 0.6 0.5 0.4 0.3 0.2 0.1 0 0.5 0.4 0.3 0.2 0.1 0 1 10 100 IF = IC IF = 2 x IC IF = 3 x IC 1 icny17_16 10 100 icny17_13 IC (mA) IC (mA) Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-1 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 1.0 0.9 0.8 0.7 VCEsat = f (IC) 200 Ptot = f (TA) 150 Transistor VCE sat (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 IF = 2 x IC IF = 3 x IC Ptot (mW) 100 Diode 50 0 0 icny17_18 25 50 75 100 icny17_14 IC (mA) TA (°C) Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-2 Fig. 17 - Permissible Power Dissipation for Transistor and Diode 1.0 0.9 0.8 0.7 VCEsat = f (IC) IF = IC VCE sat (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 IF = 2 x IC IF = 3 x IC 10 100 icny17_15 IC (mA) Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 www.vishay.com 6 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection PACKAGE DIMENSIONS in inches (millimeters) Pin one ID Vishay Semiconductors 3 0.248 (6.30) 0.256 (6.50) 4 2 1 5 6 ISO Method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 4° typ. 0.018 (0.45) 0.022 (0.55) i178004 0.048 (0.45) 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 0.300 (7.62) typ. 18° 0.031 (0.80) min. 0.031 (0.80) 3°to 9° 0.035 (0.90) 0.100 (2.54) typ. 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) 0.114 (2.90) 0.130 (3.0) Option 6 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.028 (0.7) min. Option 7 0.300 (7.62) typ. Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.331 (8.4) min. 0.406 (10.3) max. 0.0098 (0.249) 0.020 (0.51) 0.040 (1.02) 0.012 (0.30 ) typ. 0.315 (8.00) min. 15° max. 18450 Document Number: 83606 Rev. 1.5, 09-Nov-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 7 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83606 Rev. 1.5, 09-Nov-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1
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