CNY17F-4X009

CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • Breakdown Voltage, 5300 VRMS • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 18216 A C NC 1 2 3 6 NC 5C 4E e3 Pb Pb-free Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • BSI IEC60950 IEC60065 • FIMKO Order Information Part CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1X006 CNY17F-1X007 CNY17F-1X009 CNY17F-2X006 CNY17F-2X007 CNY17F-2X009 CNY17F-3X006 CNY17F-3X007 CNY17F-3X009 CNY17F-4X006 CNY17F-4X007 CNY17F-4X009 Remarks CTR 40 - 80 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 40 - 80 %, DIP-6 400 mil (option 6) CTR 40 - 80 %, SMD-6 (option 7) CTR 40 - 80 %, SMD-6 (option 9) CTR 63 - 125 %, DIP-6 400 mil (option 6) CTR 63 - 125 %, SMD-6 (option 7) CTR 63 - 125 %, SMD-6 (option 9) CTR 100 - 200 %, DIP-6 400 mil (option 6) CTR 100 - 200 %, SMD-6 (option 7) CTR 100 - 200 %, SMD-6 (option 9) CTR 160 - 320 %, DIP-6 400 mil (option 6) CTR 160 - 320 %, SMD-6 (option 7) CTR 160 - 320 %, SMD-6 (option 9) Description The CNY17F is an optocoupler consisting af a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 Series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity. For additional information on the available options refer to Option Information. Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 1 CNY17F Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC forward current Surge forward current Power dissipation t ≤ 10 µ s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter breakdown voltage Collector current t ≤ 1.0 ms Total power dissipation Test condition Symbol BVCEO IC IC Pdiss Value 70 50 100 150 Unit V mA mA mW Coupler Parameter Isolation test voltage (between emitter and detector referred to standard climate 23/50 DIN 50014) Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm VIO = 500 V RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS ≥ 7.0 ≥ 7.0 ≥ 0.4 175 ≥ 1011 - 55 to + 150 - 55 to + 100 100 260 mm mm mm Ω °C °C °C °C www.vishay.com 2 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reserve current Capacitance Thermal resistance Test condition IF = 60 mA IR = 1 0 µ A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rth 6.0 0.01 25 750 10 Min Typ. 1.25 Max 1.65 Unit V V µA pF K/W Output Parameter Collector-emitter capacitance Base - collector capacitance Emitter - base capacitance Thermal resistance Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 5.0 V, f = 1.0 MHz VCE = 5.0 V, f = 1.0 MHz Symbol CCE CBC CEB Rth Min Typ. 5.2 6.5 7.5 500 Max Unit pF pF pF K/W Coupler Parameter Saturation voltage, collectoremitter Coupling capacitance Collector-emitter leakage current VCE = 10 V CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 Test condition IF = 10 mA, IC = 2.5 mA Part Symbol VCEsat CC ICEO ICEO ICEO ICEO Min Typ. 0.25 0.6 2.0 2.0 5.0 5.0 50 50 100 100 Max 0.4 Unit V pF nA nA nA nA Current Transfer Ratio Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number Parameter Current Transfer Ratio Test condition IF = 10 mA Part CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 IF = 1.0 mA CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 Unit % % % % % % % % Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 3 CNY17F Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Turn-on time Rise time Turn-off time Fall time Cut-off frequency Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W Test condition IF = 20 mA IF = 10 mA IF = 5.0 mA Rise time IF = 20 mA IF = 10 mA IF = 5.0 mA Turn-off time IF = 20 mA IF = 10 mA IF = 5.0 mA Fall time IF = 20 mA IF = 10 mA IF = 5.0 mA Symbol ton tr toff tf fCO Min Typ. 3.0 2.0 2.3 2.0 250 Max Unit µs µs µs µs kHz Switching operation (with saturation) Parameter Turn-on time Part CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 Symbol ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf Min Typ. 3.0 4.2 4.2 6.0 2.0 3.0 3.0 4.6 18 23 23 25 11 14 14 15 Max Unit µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF RL=75 Ω IC VCC=5 V IF 1 KΩ VCC=5 V 45 Ω 47 Ω icny17f_01 icny17f_02 Figure 1. Linear Operation ( without Saturation) Figure 2. Switching Operation (with Saturation) www.vishay.com 4 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors (TA = –25°C, VCE = 5.0 V) IC/IF = f (IF) (TA = 50°C, VCE = 5.0 V) 1 2 3 4 1 2 3 4 icny17f_03 icny17f_06 A Figure 3. Current Transfer Ratio vs. Diode Current Figure 6. Current Transfer Ratio vs. Diode Current (TA = 0°C, VCE = 5.0 V) IC/IF = f (IF) (TA = 75°C, VCE = 5.0 V) 1 2 3 4 1 2 3 4 icny17f_04 icny17f_07 Figure 4. Current Transfer Ratio vs. Diode Current Figure 7. Current Transfer Ratio vs. Diode Current (TA = 25°C, VCE = 5.0 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) 4 3 1 2 3 4 2 1 icny17f_05 icny17f_08 A Figure 5. Current Transfer Ratio vs. Diode Current Figure 8. Current Transfer Ratio (CTR) vs. Temperature Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 5 CNY17F Vishay Semiconductors VCEsat = f (IC) (TA = 25°C) (TA = 25°C) IC = f (VCE) icny17f_09 icny17f_12 Figure 9. Output Characteristics CNY17F-2, -3 Figure 12. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-1 VF = f (IF) VCEsat = f (IC) (TA = 25°C) icny17f_10 icny17f_13 Figure 10. Forward Voltage Figure 13. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-2 VCEsat = f (IC) (TA = 25°C) ICEO = f (V,T) (TA = 75°C, IF = 0) icny17f_11 icny17f_14 Figure 11. Collector-Emitter off-state Current Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-3 www.vishay.com 6 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors V IF = f (TA) VCEsat = f (IC) (TA = 25°C) icny17f_15 icny17f_18 Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-4 Figure 18. Permissible Forward Current Diode C=f (VO) (TA= 25°C, f=1.0 MHz) D=parameter, TA = 25°C, IF=f(tp) icny17f_16 icny17f_19 Figure 16. Permissible Pulse Load Figure 19. Transistor Capacitance Ptot = f (TA) icny17f_17 Figure 17. Permissible Power Dissipation for Transistor and Diode Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 7 CNY17F Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .010 (.25) typ. .300–.347 (7.62–8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 www.vishay.com 8 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 9