CNY64_05

CNY64/ CNY65/ CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage Features • Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) • Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 200 • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 64 65 Top View A C 66 V DE Agency Approvals • UL1577, File No. E76222 System Code H,J &K, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • VDE related features: • Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak C E 17187 e4 Pb Pb-free Order Information Part CNY64 CNY65 CNY66 CNY64A CNY65A CNY64B CNY65B Remarks CTR 50 - 300 %, High Isolation Distance, 4 PIN CTR 50 - 300 %, High Isolation Distance, 4 PIN CTR 50 - 300 %, High Isolation Distance, 4 PIN CTR 63 - 125 %, High Isolation Distance, 4 PIN CTR 63 - 125 %, High Isolation Distance, 4 PIN CTR 100 - 200 %, High Isolation Distance, 4 PIN CTR 100 - 200 %, High Isolation Distance, 4 PIN Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage ≤ 300 V For appl. class I - IV at mains voltage ≤ 600 V For appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/EN 60950 Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 1 CNY64/ CNY65/ CNY66 Vishay Semiconductors Office machines (applied for reinforced isolation for mains voltage VISHAY VDE 0700/IEC 60335 Household equipment ≤ 400 VRMS) VDE 0804 IEC 60065 VDE 0160 Electronic equipment for electrical power installation Telecommunication apparatus and data processing VDE 0750/IEC 60601 Medical equipment Safety for mains-operated electronic and related household apparatus Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature t p ≤ 10 µ s Test condition Symbol VR IF IFSM Pdiss Tj Value 5 75 1.5 120 100 Unit V mA A mW °C Output Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp ≤ 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 32 7 50 100 130 100 Unit V V mA mA mW °C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s t = 1 min Test condition Symbol VISO Ptot Tamb Tstg Tsld Value 8.2 250 - 55 to + 85 - 55 to + 100 260 Unit kV mW °C °C °C www.vishay.com 2 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY Electrical Characteristics CNY64/ CNY65/ CNY66 Vishay Semiconductors Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF Output Parameter Collector emitter voltage Emitter collector voltage Collector-emitter leakage current Test condition IC = 1 mA IE = 100 µA VCE = 20 V, If = 0 Symbol VCEO VECO ICEO Min 32 7 200 Typ. Max Unit V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz Symbol VCEsat fc Ck 110 0.3 Min Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 10 mA CNY64A CNY65A CNY64B CNY65B Part Symbol CTR CTR CTR CTR CTR Min 50 63 63 100 100 Typ. Max 300 125 125 200 200 Unit % % % % % Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Forward current Test condition Symbol IF Min Typ. Max 120 Unit mA Output Parameter Power dissipation Test condition Symbol Pdiss Min Typ. Max 250 Unit mW Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 3 CNY64/ CNY65/ CNY66 Vishay Semiconductors Coupler Parameter Rated impulse voltage Safety temperature Test condition Symbol VIOTM Tsi Min Typ. Max 8 150 VISHAY Unit kV °C Insulation Rated Parameters Parameter Partial discharge test voltage Routine test Partial discharge test voltage Lot test (sample test) Insulation resistance Test condition 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C (construction test only) Symbol Vpd VIOTM Vpd RIO RIO RIO Min 2.8 8 2.2 1012 10 11 9 Typ. Max Unit kV kV kV Ω Ω Ω 10 VIOTM 250 225 200 175 150 125 100 75 50 25 0 0 95 10922 Psi (mW) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM I si (mA) 0 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres 25 50 75 100 125 150 175 200 Tamb ( °C ) t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 www.vishay.com 4 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test condition VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω (see figure 3) VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) CNY64/ CNY65/ CNY66 Vishay Semiconductors Symbol td tr tf ts ton toff ton toff Min Typ. 2.6 2.4 2.7 0.3 5.0 3.0 25.0 42.5 Max Unit µs µs µs µs µs µs µs µs IF 0 IF IF +5V IC = 5 mA; adjusted through input amplitude 96 11698 0 IC 100% 90% tp t RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 100 W Oscilloscope RL 1 MW CL 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 95 10900 tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 3. Test circuit, non-saturated operation Figure 5. Switching Times 0 IF IF = 10 mA +5V IC RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope RL≥ 1M Ω CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 5 CNY64/ CNY65/ CNY66 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ptot –Total Power Dissipation ( mW ) VISHAY 200 1000 ICEO– Collector Dark Current, with open Base ( nA) 160 V CE=20V I F=0 100 120 Coupled Device 80 Phototransistor IR-Diode 10 40 0 0 1 25 50 75 100 96 12000 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C ) 95 11003 Tamb – Ambient Temperature (°C ) Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA) 1000 I F - Forward Current ( mA ) V CE=5V 10 100 10 1 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11012 1 10 100 V F - Forward Voltage ( V ) I F – Forward Current ( mA ) Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Current vs. Forward Current 100 CTR rel Relative Current Transfer Ratio – 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V CE=5V I F=10mA IC – Collector Current ( mA ) 1.5 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient T emperature ( °C ) 0.1 0.1 95 11013 1 10 100 96 11911 V CE – Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 6 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY CNY64/ CNY65/ CNY66 Vishay Semiconductors 20 ton 15 Non Saturated Operation VS = 5 V R L = 100 Ω V – CEsat Collector Emitter Saturation Voltage (V ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1 10% 10 I C – Collector Current ( mA ) 100 20% CTR=50% ton / toff - Turn on / Turn off Time ( µ s ) 10 toff 5 0 0 2 4 6 8 10 I C - Collector Current ( mA ) 96 11912 95 11016 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 V CE=5V 100 Figure 15. Turn on / off Time vs. Collector Current CTR – CurrentTransfer Ratio ( % ) 10 1 0.1 95 11015 1 10 100 I F – Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current ton / toff - Turn on / Turn off Time ( µ s ) 50 toff 40 30 ton Saturated Operation VS = 5 V RL = 1 kΩ 20 20 10 0 0 5 10 15 95 11017 I F - Forward Current ( mA ) Figure 14. Turn on / off Time vs. Forward Current Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 7 CNY64/ CNY65/ CNY66 Vishay Semiconductors Package Dimensions in mm VISHAY 14765 Package Dimensions in mm 14763 www.vishay.com 8 Document Number 83540 Rev. 1.6, 26-Oct-04 VISHAY Package Dimensions in mm CNY64/ CNY65/ CNY66 Vishay Semiconductors 14764 Document Number 83540 Rev. 1.6, 26-Oct-04 www.vishay.com 9 CNY64/ CNY65/ CNY66 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83540 Rev. 1.6, 26-Oct-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1