CNY64_08

CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS 64 65 • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 200 • Lead (Pb)-free component 4 Top View A C 66 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC V DE C 17187 E APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - IV at mains voltage ≤ 600 V - for appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884) DESCRIPTION The CNY64/CNY65/CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated electronic and related household apparatus • VDE 0700/IEC 60335 Household equipment • VDE 0160 Electronic equipment for electrical power installation • VDE 0750/IEC 60601 Medical equipment AGENCY APPROVALS • UL1577, file no. E76222 system code H, J, and K, double protection • DIN EN 60747-5-5 (VDE 0884) • VDE related features: - rated impulse voltage (transient overvoltage), VIOTM = 8 kV peak - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kV peak ORDER INFORMATION PART CNY64 CNY65 CNY66 CNY64A CNY65A CNY64B CNY65B REMARKS CTR 50 to 300 %, high isolation distance, 4 pin CTR 50 to 300 %, high isolation distance, 4 pin CTR 50 to 300 %, high isolation distance, 4 pin CTR 63 to 125 %, high isolation distance, 4 pin CTR 63 to 125 %, high isolation distance, 4 pin CTR 100 to 200 %, high isolation distance, 4 pin CTR 100 to 200 %, high isolation distance, 4 pin www.vishay.com 236 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER AC Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, ≤ 10 s t = 1 min VISO Ptot Tamb Tstg Tsld 8.2 250 - 55 to + 85 - 55 to + 100 260 kV mW °C °C °C tP/T = 0.5, tP ≤ 10 ms VCEO VECO IC ICM Pdiss Tj 32 7 50 100 130 100 V V mA mA mW °C tP ≤ 10 µs VR IF IFSM Pdiss Tj 5 75 1.5 120 100 V mA A mW °C TEST CONDITION SYMBOL VALUE UNIT Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter leakage current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF IC = 1 mA IE = 100 µA VCE = 20 V, If = 0 A VCEO VECO ICEO 32 7 200 V V nA IF = 50 mA VR = 0, f = 1 MHz VF Cj 1.25 50 1.6 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART CNY64A IC/IF VCE = 5 V, IF = 5 mA CNY65A CNY64B CNY65B SYMBOL CTR CTR CTR CTR CTR MIN. 50 63 63 100 100 TYP. MAX. 300 125 125 200 200 UNIT % % % % % Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 237 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage MAXIMUM SAFETY RATINGS PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature VIOTM Tsi 10 150 kV °C Pdiss 250 mW IF 120 mA TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V, Tamb = 25 °C Insulation resistance VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C (construction test only) SYMBOL Vpd Vpd RIO RIO RIO MIN. 2.8 2.2 1012 1011 109 TYP. MAX. UNIT kV kV Ω Ω Ω VIOTM 250 225 200 175 150 125 100 75 50 25 0 0 95 10922 Psi (mW) t1, t2 t3 , t4 ttest tstres VPd VIOWM VIORM = 1 to 10 s =1s = 10 s = 12 s Isi(mA) 0 t3 ttest t4 t1 tTr = 60 s t2 t stres t 25 50 75 100 125 150 175 200 Tamb (°C) Fig. 1 - Derating Diagram 13930 Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747 SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time TEST CONDITION VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) SYMBOL td tr tf ts ton toff ton toff MIN. TYP. 2.6 2.4 2.7 0.3 5.0 3.0 25.0 42.5 MAX. UNIT µs µs µs µs µs µs µs µs www.vishay.com 238 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage IF 0 tp t 0 IF IF +5V IC = 5 mA; adjusted through input amplitude IC 100 % 90 % RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF 10 % 0 tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off t 95 10900 ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times IF 0 IF = 10 mA +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ptot - Total Power Dissipation (mW) 200 160 120 Coupled device 80 40 0 0 25 50 75 100 Phototransistor IR-diode 1000 IF - Forward Current (mA) 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 95 11003 Tamb - Ambient Temperature (°C) VF - Forward Voltage (V) Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 239 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage CTRrel - Relative Current Transfer Ratio 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 100 IC - Collector Current (mA) 1.4 VCE = 5 V IF = 10 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 95 11013 1 10 100 96 11911 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 11 - Collector Current vs. Collector Emitter Voltage 1000 1.0 ICEO - Collector Dark Current, with open Base (nA) VCEsat - Collector Emitter Saturation Voltage (V) VCE = 20 V IF = 0 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1 96 11912 CTR = 50 % 10 20 % 10 % 10 100 1 0 10 20 30 40 50 60 70 80 90 100 96 12000 Tamb - Ambient Temperature (°C) IC - Collector Current (mA) Fig. 9 - Collector Dark Current vs. Ambient Temperature Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V 10 CTR - Current Transfer Ratio (%) 100 1000 VCE = 5 V 100 IC - Collector Current (mA) 1 10 0.1 0.01 0.1 95 11012 1 0.1 1 10 100 1 10 100 IF - Forward Current (mA) 95 11015 IF - Forward Current (mA) Fig. 10 - Collector Current vs. Forward Current Fig. 13 - Current Transfer Ratio vs. Forward Current www.vishay.com 240 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage ton/toff - Turn-on/Turn-off Time (µs) ton/toff - Turn-on/Turn-off Time (µs) 50 toff 40 20 ton 15 Non-saturated operation VS = 5 V RL = 100 Ω 30 ton 20 10 0 0 5 10 15 20 Saturated operation VS = 5 V RL = 1 kΩ 10 toff 5 0 0 2 4 6 8 10 95 11017 IF - Forward Current (mA) 95 11016 IC - Collector Current (mA) Fig. 14 - Turn-on/Turn-off Time vs. Collector Current Fig. 15 - Turn-on/Turn-off Time vs. Forward Current PACKAGE DIMENSIONS in millimeters FOR CNY64 12.8 ± 0.1 6.01 ± 0.1 7.2 ± 0.1 10.16 ± 0.2 5.08 ± 0.2 0. 4 5 0. 9.1 ± 0.3 A Coll Weight: ca. 0.73 g Creepage distance: > 9.5 mm Air path: > 9.5 mm after mounting on PC board Cath E technical drawings according to DIN specifications Drawing-No.: 6.544-5038.01-4 Issue: 2; 10.11.98 14765 Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 241 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage PACKAGE DIMENSIONS in millimeters FOR CNY65 17.8 ± 0.1 9.6 ± 0.1 6.1 ± 0.1 15.24 ± 0.2 7.62 ± 0.2 0. 4 technical drawings according to DIN specifications A 9.1 ± 0.3 0. 5 Weight: ca. 1.40 g Creepage distance: > 14 mm Air path: > 14 mm after mounting on PC board Coll Cath E 14763 PACKAGE DIMENSIONS in millimeters FOR CNY66 20.4 ± 0.1 9.6 ± 0.1 6.1 ± 0.1 17.8 ± 0.2 9.1 ± 0.3 7.62 ± 0.2 0. 4 technical drawings according to DIN specifications A Coll Weight: ca. 1.70 g Creepage distance: > 17 mm Air path: > 17 mm after mounting on PC board 0. 5 Cath E 14764 www.vishay.com 242 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 243 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1