CPV364M4UPBF

CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve • Totally lead (Pb)-free RoHS COMPLIANT IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.5 kW total) with TC = 90 °C TJ Supply voltage Power factor Modulation depth (see fig. 1) VCE(on) (typical) at IC = 10 A, 25 °C 12 ARMS 125 °C 360 Vdc 0.8 115 % 1.56 V • Designed and qualified for industrial level DESCRIPTION The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range Soldering temperature Mounting torque SYMBOL VCES IC ICM (1) TEST CONDITIONS MAX. 600 UNITS V TC = 25 °C TC = 100 °C 20 10 60 A 60 ILM (2) IF IFM VGE VISOL PD TJ, TStg For 10 s, (0.063" (1.6 mm) from case) 6-32 or M3 screw t = 1 min, any terminal to case TC = 25 °C TC = 100 °C TC = 100 °C 9.3 60 ± 20 2500 63 W 25 - 40 to + 150 °C 300 5 to 7 (0.55 to 0.8) lbf ⋅ in (N ⋅ m) V VRMS Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19) Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface Weight of module 0.7 oz. SYMBOL RthJC (IGBT) RthJC (DIODE) RthCS (MODULE) TYP. 0.10 20 MAX. 2.0 3.0 g °C/W UNITS ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage SYMBOL V(BR)CES (1) TEST CONDITIONS VGE = 0 V, IC = 250 µA VGE = 0 V, IC = 1.0 mA IC = 1 0 A MIN. 600 - TYP. 0.63 1.56 1.84 1.56 - 13 18 1.3 1.2 - MAX. 2.1 - UNITS V V/°C ΔV(BR)CES/ΔTJ Collector to emitter saturation voltage VCE(on) IC = 2 0 A IC = 10 A, TJ = 150 °C VGE = 15 V See fig. 2, 5 3.0 11 - V 6.0 250 µA 3500 1.7 V 1.6 ± 100 nA mV/°C S Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Zero gate voltage collector current VGE(th) ΔVGE(th)/ΔTJ gfe (2) ICES VCE = VGE, IC = 250 µA VCE = VGE, IC = 250 µA VCE = 100 V, IC = 10 A VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150 °C IC = 1 5 A IC = 15 A, TJ = 150 °C VGE = ± 20 V See fig. 13 Diode forward voltage drop Gate to emitter leakage current Notes (1) Pulse width ≤ 80 µs, duty factor ≤ 0.1 % (2) Pulse width 5.0 µs; single shot VFM IGES - www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Total switching loss Input capacitance Output capacitance Reverse transfer capacitance Diode reverse recovery time SYMBOL Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr TJ = 150 °C IC = 10 A, VCC = 480 V VGE = 15 V, RG = 10 Ω Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C See fig. 17 160 See fig. 16 See fig. 15 IF = 1 5 A VR = 200 V dI/dt = 200 A/µs See fig. 14 74 4.0 6.5 80 220 188 120 6.0 A 10 180 nC 600 A/µs TJ = 25 °C IC = 10 A, VCC = 480 V VGE = 15 V, RG = 10 Ω Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 IC = 1 0 A VCC = 400 V VGE = 15 V See fig. 8 TEST CONDITIONS MIN. TYP. 100 16 40 41 13 96 110 0.26 0.18 0.44 39 15 220 160 0.74 2100 110 34 42 MAX. 160 24 55 ns 140 160 0.7 ns 60 ns pF mJ mJ nC UNITS Diode peak reverse recovery charge Irr Diode reverse recovery charge Diode peak rate of fall of recovery during tb Qrr dI(rec)M/dt Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 CPV364M4UPbF Vishay High Power Products 20 18 16 IGBT SIP Module (Ultrafast IGBT) 5.85 4.68 4.10 3.51 2.93 2.34 1.76 1.17 0.59 0.00 14 12 10 8 6 4 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 100 20 IC , Collector-to-Emitter Current (A) Maximum DC Collector Current(A) 16 12 10 TJ = 150°C 8 TJ = 25°C 4 1 0.1 1 VGE = 15V 20µs PULSE WIDTH 10 0 25 50 75 100 125 150 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature 100 2.0 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 20A 1.8 1.6 T J = 150°C 10 IC = 10A TJ = 25°C 1.4 1.2 IC = 5.0A 5 1 5 6 7 V CC = 10V 5µs PULSE WIDTH 8 9 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGE, Gate-to-Emitter Voltage (V) TJ , Junction Temperature ( ° C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94489 Revision: 01-Sep-08 Total Output Power (kW) LOAD CURRENT (A) Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 5.27 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) 10 Vishay High Power Products Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t t 1 t 2 1 /t 2 0.01 0.00001 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 4000 C, Capacitance (pF) 3000 Total Switching Losses (mJ) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 0.70 VCC VGE TJ 0.65 IC 0.60 = 480V = 15V = 25 ° C = 10A Cies 2000 0.55 Coes 1000 0.50 Cres 0.45 0 1 10 100 0.40 0 10 20 30 40 50 VCE , Collector-to-Emitter Voltage (V) RG , Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance 20 VGE , Gate-to-Emitter Voltage (V) VCC = 400V I C = 10A 10 RG = 10 Ω VGE = 15V VCC = 480V 16 Total Switching Losses (mJ) 12 IC = 20 A 1 IC = 10 A IC = 5.0 A 5 8 4 0 0 20 40 60 80 100 120 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 QG , Total Gate Charge (nC) TJ , Junction Temperature ( ° C ) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) 100 1.8 1.2 0.9 I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ V 1.5 CC VGE = 10 Ω = 150 °C = 480V = 15V VGE = 20V T J = 125 oC 10 0.6 0.3 SAFE OPERATING AREA 0.0 0 4 8 12 16 20 24 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA 100 Instantaneous Forward Current - I F (A) 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) 100 Vishay High Power Products 800 VR= 200V T J = 125°C T J = 25°C 80 VR = 200V TJ = 125°C TJ = 25°C 600 IF = 30A I F = 30A 60 Q RR - (nC) t rr - (ns) 400 I F = 15A I F = 15A IF = 5.0A 40 200 I F = 5.0A 20 10 0 di f /dt - (A/µs) 1000 0 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt Fig. 16 - Typical Stored Charge vs. dIF/dt 100 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C I F = 30A 10 IF = 15A di(rec)M/dt - (A/µs) I IRRM - (A) I F = 5.0A I F = 15A I F = 30A I F = 5.0A 1 100 1000 100 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dIF/dt Fig. 17 - Typical dI(rec)M/dt vs dIF/dt Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. Vce DUT VOLTAGE AND CURRENT Ipk Ic 80% of Vce 430µF D.U.T. Vcc 10% Ic 90% Ic td(on) tr 5% Vce t2 Eon = Vce ie dt t1 ∫ t1 t2 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 90% Vge +Vge trr Ic Qrr = ∫ trr id dt tx Vce tx 10% Vcc 90% Ic Ic 5% Ic 10% Irr Vcc Ic 10% Vce Vpk Irr td(off) tf DIODE RECOVERY WAVEFORMS Eoff = ∫ t1+5µS Vce ic dt t1 DIODE REVERSE RECOVERY ENERGY t3 t1 t2 t4 Erec = Vd id dt t3 ∫ t4 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products L 1000 V 50 V 6000 µF 100 V VC D.U.T. 0 - 4 80 V RL = 480 V 4 x IC at 25 °C Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 4 Q3 D3 15 10 Q5 D5 16 6 Q2 D2 12 Q4 D4 18 Q6 D6 7 13 19 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95066 Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) 62.43 (2.458) Ø 3.91 (0.154) 2x 53.85 (2.120) 7.87 (0.310) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) 0.38 (0.015) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1