CQY36N

CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors 94 8638 • Package matches with detector BPW16N • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT CQY36N Ie (mW/sr) 1.5 ϕ (deg) ± 55 λP (nm) 950 tr (ns) 800 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE CQY36N Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤3s leads not soldered tp ≤ 100 µs TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 2 160 100 - 25 to + 85 - 25 to + 100 245 450 UNIT V mA A mW °C °C °C °C K/W www.vishay.com 78 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81001 Rev. 1.7, 04-Sep-08 CQY36N Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21320 RthJA = 450 K/W IF - Forward Current (mA) RthJA = 450 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21319 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Rise time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 50 mA IF = 50 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs TEST CONDITION IF = 50 mA, tp ≤ 20 ms IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp ≤ 20 ms IF = 50 mA, tp ≤ 20 ms IF = 50 mA SYMBOL VF TKVF V(BR) Cj Ie φe TKφe ϕ λp Δλ tr tr d 0.7 5 50 1.5 10 - 0.8 ± 55 950 50 800 400 1.2 7.5 MIN. TYP. 1.3 - 1.3 MAX. 1.6 UNIT V mV/K µA pF mW/sr mW %/K deg nm nm ns ns mm BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (mA) 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 1 2 3 4 94 7990 0 20 40 60 80 100 V F - Forward Voltage (V) Tamb - Ambient Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81001 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 79 CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 100 1.25 I e – Radiant Intensity (mW/sr) Φe rel - Relative Radiant Power 1.0 10 0.75 0.5 1 0.25 IF = 100 mA 0 900 950 1000 0.1 100 94 7917 101 102 103 I F – Forward Current (mA) 104 94 7994 λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength 0° 100 I e rel – Relative Radiant Intensity 10 ° 20 ° 30° Φ e - Radiant Power (mW) 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0.1 1 13718 10 100 1000 94 7919 0.6 0.4 0.2 0 0.2 0.4 0.6 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 1.2 Ie rel; Φe rel IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 80 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81001 Rev. 1.7, 04-Sep-08 CQY36N Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters 96 12189 Document Number: 81001 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 81 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1