CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors
94 8638
• Package matches with detector BPW16N • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC
DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens.
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT CQY36N Ie (mW/sr) 1.5 (deg) ± 55 P (nm) 950 tr (ns) 800
Note • Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE CQY36N Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t3s leads not soldered tp 100 μs TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 2 160 100 - 25 to + 85 - 25 to + 100 245 450 UNIT V mA A mW °C °C °C °C K/W
Document Number: 81001 Rev. 1.8, 16-May-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
180
120 100 80 60
PV - Power Dissipation (mW)
160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
21320
RthJA = 450 K/W
IF - Forward Current (mA)
RthJA = 450 K/W
40 20 0 0 10 20 30 40 50 60 70 80 90 100
21319
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Rise time Virtual source diameter IF = 50 mA IF = 50 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 μs TEST CONDITION IF = 50 mA, tp 20 ms IF = 100 mA IR = 100 μA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA SYMBOL VF TKVF V(BR) Cj Ie e TKe p tr tr d 0.7 5 50 1.5 10 - 0.8 ± 55 950 50 800 400 1.2 2.1 MIN. TYP. 1.3 - 1.3 MAX. 1.6 UNIT V mV/K μA pF mW/sr mW %/K deg nm nm ns ns mm
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 4 10 3 10 2 10 1 10 0 10 -1
94 7996
1.2
VF rel - Relative Forward Voltage (V)
I F - Forward Current (mA)
1.1 IF = 10 mA 1.0 0.9
0.8 0.7
0
1
2
3
4
94 7990
0
20
40
60
80
100
V F - Forward Voltage (V)
Tamb - Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81001 Rev. 1.8, 16-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Vishay Semiconductors
100
1.25
I e – Radiant Intensity (mW/sr)
Φe rel - Relative Radiant Power
1.0
10
0.75 0.5
1
0.25
IF = 100 mA
0 900 950 λ - Wavelength (nm) 1000
0.1 100
94 7917
101 102 103 I F – Forward Current (mA)
104
94 7994
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
0° 100
I e rel – Relative Radiant Intensity
10 °
20 °
30°
Φ e - Radiant Power (mW)
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
10
1
0.1 1
13718
10
100
1000
94 7919
0.6
0.4
0.2
0
0.2
0.4
0.6
I F - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
1.6
1.2
Ie rel; Φe rel
IF = 20 mA 0.8
0.4
0 - 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81001 Rev. 1.8, 16-May-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 3
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.544-5053.01-4 Issue: 1; 01.07.96
96 12189
www.vishay.com 4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81001 Rev. 1.8, 16-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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