CS33-100KGKD0016

CS33-100KGKD0016

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    CS33-100KGKD0016 - Dual Value Chip Resistors, Center Tap - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
CS33-100KGKD0016 数据手册
CS 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Small size 30 mil x 30 mil • Very high ohmic values (up to 5 MΩ) • Good stability 0.1 % (2000 h, rated power, at + 70 °C) Actual Size • Wirebondable Chromium silicon thin film is very well suited to produce high density and high ohmic value resistor chips. Performances and sizes are greatly improved compared to Thick Film counterparts. The center tap configuration offers a greater flexibility for hybrid layout design. TYPICAL PERFORMANCE ABS TCR 100 ppm/°C ABS TOL. 0.5 % TRACKING 5 ppm/°C RATIO 0.5 % SCHEMATIC RT R1 R2 RT = R1 + R2 with R1 = R2 Standard STANDARD ELECTRICAL SPECIFICATIONS TEST MATERIAL Resistance range Tracking TCR: Absolute Ohmic value Tolerance: Matching Power rating Stability Voltage coefficient Working voltage Operating temperature range Storage temperature range Noise Thermal EMF Shelf life stability ± 0.5 % standard 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C ± 0.1 % typical, ± 0.2 maximum 0.1 ppm/V 100 VDC on RT - 55 °C to + 155 °C - 55 °C to + 155 °C < - 20 dB typical < 0.01 µV/°C 200 ppm 1 year at + 25 °C MIL-STD-202 Method 308 2000 h at + 70 °C under Pn Ratio Absolute ± 100 ppm/°C (± 50 ppm/°C on request) 1/1 standard (unequal values: please consult) ± 0.5 %, ± 1 %, ± 2 % - 55 °C to + 155 °C SPECIFICATIONS PASSIVATED CHROMIUM SILICON 10 kΩ to 5 MΩ ± 5 ppm/°C for RT = R1 + R2 - 55 °C to + 155 °C CONDITIONS * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 www.vishay.com 24 For technical questions, contact: sfer@vishay.com Document Number: 60067 Revision: 06-Oct-08 CS 33 Dual Value Chip Resistors, Center Tap Vishay Sfernice DIMENSIONS DIMENSION B INCHES 0.03 ± 0.004 0.03 ± 0.004 0.01 ± 0.015 0.004 0.006 0.006 MILLIMETERS 0.76 ± 0.10 0.76 ± 0.10 0.25 ± 0.40 0.10 0.15 0.15 Bonding Pad Area D A B C A E C F D E F MECHANICAL SPECIFICATIONS Resistive element Passivation Substrate material Bonding pads Chromium Silicon Silicone Nitride Silicon (Consult Vishay for Al2O3) Aluminum GLOBAL PART NUMBER INFORMATION New Global Part Numbering: CS33-100KF1MD0016 (preferred part number format) C S 3 3 - 1 0 0 K F 1 M D 0 0 1 6 GLOBAL MODEL R1 VALUE Decimal R, K or M ABS. TOLERANCE D = ± 0.5 % F = ± 1.0 % G = ± 2.0 % R2 VALUE Decimal R, K or M RAT. TOLERANCE D = ± 0.5 % OPTION leave blank if no option Historical Part Number example: CS 33 100K 1M 1 % 0.5 % R0016 (will continue to be accepted) CS 33 HISTORICAL MODEL 100K 1M R1/R2 VALUE 1 % 0.5 % ABS. TOLERANCE AND RATIO TOLERANCE R0016 OPTION Document Number: 60067 Revision: 06-Oct-08 For technical questions, contact: sfer@vishay.com www.vishay.com 25 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
CS33-100KGKD0016
### 物料型号 - 新全球零件编号:CS33-100KF1MD0016(首选零件编号格式)

### 器件简介 - 特点: - 中心抽头特性 - 小尺寸30 mil x 30 mil - 符合RoHS绿色标准(5-2008) - 非常高的电阻值(高达5 MΩ) - 良好的稳定性0.1%(2000小时,额定功率,在+70°C)

### 引脚分配 - Schematic:Rr = Ry + R2,其中R1 = R2为标准配置。

### 参数特性 - 标准电气规格: - 电阻范围:10k到5MΩ(对于Rr = R1 + R2) - 温度系数(TCR):±5ppm/°C(追踪),±100ppm/°C(绝对值,可按需提供±50ppm/°C) - 欧姆值比:1/1标准(不等值:请咨询) - 公差:绝对值±0.5%,±1%,±2% - 匹配:±0.5%标准 - 功率额定值:+25°C时250mW,+70°C时125mW,+125°C时50mW - 稳定性:±0.1%典型值,±0.2%最大值(在+70°C下2000小时,额定功率) - 电压系数:0.1ppm/V - 工作电压:室温下100Vpc - 工作温度范围:-55°C至+155°C - 存储温度范围:-55°C至+155°C - 噪声:<-20dB典型值(MIL-STD-202方法308) - 热EMF:<0.01V/°C - 货架寿命稳定性:+25°C下1年200ppm

### 功能详解 - 铬硅薄膜:非常适合生产高密度和高电阻值的电阻芯片,与厚膜产品相比,性能和尺寸大大改善。 - 中心抽头配置:为混合布局设计提供更大的灵活性。 - 可焊接:提供了焊接的可能性。

### 应用信息 - 该产品未特别标明可用于医疗、救生或维持生命的应用,除非另有明确说明。客户使用或销售未明确标明用于此类应用的Vishay产品,完全自担风险,并同意对由此使用或销售引起的任何损害赔偿Vishay。

### 封装信息 - 尺寸: - A:0.03±0.004英寸(0.76±0.10毫米) - B:0.03±0.004英寸(0.76±0.10毫米) - C:0.01±0.015英寸(0.25±0.40毫米) - D:0.004英寸(0.10毫米) - E:0.006英寸(0.15毫米) - F:0.006英寸(0.15毫米) - 机械规格: - 电阻元件:铬硅 - 钝化:硅氮化物 - 基板材料:硅(氧化铝请咨询Vishay) - 键合垫:铝
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