CS33-100RGKD0016

CS33-100RGKD0016

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    CS33-100RGKD0016 - Dual Value Chip Resistors, Center Tap - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
CS33-100RGKD0016 数据手册
CS 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Small size 30 mil x 30 mil • Very high ohmic values (up to 5 MΩ) • Good stability 0.1 % (2000 h, rated power, at + 70 °C) Actual Size • Wirebondable Chromium silicon thin film is very well suited to produce high density and high ohmic value resistor chips. Performances and sizes are greatly improved compared to Thick Film counterparts. The center tap configuration offers a greater flexibility for hybrid layout design. TYPICAL PERFORMANCE ABS TCR 100 ppm/°C ABS TOL. 0.5 % TRACKING 5 ppm/°C RATIO 0.5 % SCHEMATIC RT R1 R2 RT = R1 + R2 with R1 = R2 Standard STANDARD ELECTRICAL SPECIFICATIONS TEST MATERIAL Resistance range Tracking TCR: Absolute Ohmic value Tolerance: Matching Power rating Stability Voltage coefficient Working voltage Operating temperature range Storage temperature range Noise Thermal EMF Shelf life stability ± 0.5 % standard 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C ± 0.1 % typical, ± 0.2 maximum 0.1 ppm/V 100 VDC on RT - 55 °C to + 155 °C - 55 °C to + 155 °C < - 20 dB typical < 0.01 µV/°C 200 ppm 1 year at + 25 °C MIL-STD-202 Method 308 2000 h at + 70 °C under Pn Ratio Absolute ± 100 ppm/°C (± 50 ppm/°C on request) 1/1 standard (unequal values: please consult) ± 0.5 %, ± 1 %, ± 2 % - 55 °C to + 155 °C SPECIFICATIONS PASSIVATED CHROMIUM SILICON 10 kΩ to 5 MΩ ± 5 ppm/°C for RT = R1 + R2 - 55 °C to + 155 °C CONDITIONS * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 www.vishay.com 24 For technical questions, contact: sfer@vishay.com Document Number: 60067 Revision: 06-Oct-08 CS 33 Dual Value Chip Resistors, Center Tap Vishay Sfernice DIMENSIONS DIMENSION B INCHES 0.03 ± 0.004 0.03 ± 0.004 0.01 ± 0.015 0.004 0.006 0.006 MILLIMETERS 0.76 ± 0.10 0.76 ± 0.10 0.25 ± 0.40 0.10 0.15 0.15 Bonding Pad Area D A B C A E C F D E F MECHANICAL SPECIFICATIONS Resistive element Passivation Substrate material Bonding pads Chromium Silicon Silicone Nitride Silicon (Consult Vishay for Al2O3) Aluminum GLOBAL PART NUMBER INFORMATION New Global Part Numbering: CS33-100KF1MD0016 (preferred part number format) C S 3 3 - 1 0 0 K F 1 M D 0 0 1 6 GLOBAL MODEL R1 VALUE Decimal R, K or M ABS. TOLERANCE D = ± 0.5 % F = ± 1.0 % G = ± 2.0 % R2 VALUE Decimal R, K or M RAT. TOLERANCE D = ± 0.5 % OPTION leave blank if no option Historical Part Number example: CS 33 100K 1M 1 % 0.5 % R0016 (will continue to be accepted) CS 33 HISTORICAL MODEL 100K 1M R1/R2 VALUE 1 % 0.5 % ABS. TOLERANCE AND RATIO TOLERANCE R0016 OPTION Document Number: 60067 Revision: 06-Oct-08 For technical questions, contact: sfer@vishay.com www.vishay.com 25 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
CS33-100RGKD0016
1. 物料型号: - 全球统一的新型号为:CS33-100KF1MD0016(推荐型号格式)。

2. 器件简介: - 该器件为双值片式电阻器,具有中心抽头功能。铬硅薄膜非常适合生产高密度和高阻值的电阻芯片,与厚膜产品相比,性能和尺寸都有了很大提升。中心抽头配置为混合布局设计提供了更大的灵活性。

3. 引脚分配: - 标准配置为R1=R2,Rr=Ry+R2。

4. 参数特性: - 尺寸小(30 mil x 30 mil); - 符合RoHS指令(5-2008); - 非常高的阻值(高达5 MΩ); - 良好的稳定性0.1%(2000小时,额定功率,在+70°C时); - 线焊性。

5. 功能详解: - 铬硅薄膜非常适合生产高密度和高阻值的电阻芯片,与厚膜产品相比,性能和尺寸都有了很大提升。中心抽头配置为混合布局设计提供了更大的灵活性。

6. 应用信息: - 该器件适用于需要高阻值和高密度的电阻芯片的应用场合,特别是在需要中心抽头配置以提供混合布局设计灵活性的场合。

7. 封装信息: - 封装尺寸参数如下: - A:0.03±0.004英寸(0.76±0.10毫米) - B:0.03±0.004英寸(0.76±0.10毫米) - C:0.01±0.015英寸(0.25±0.40毫米) - D:0.004英寸(0.10毫米) - E:0.006英寸(0.15毫米) - F:0.006英寸(0.15毫米)
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