ES1PB

ES1PA thru ES1PD New Product Vishay Semiconductors formerly General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers Case Style SMP Cathode band Features • • • • • • • Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 15 ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward voltage, low power loss Built in strain relief, ideal for automated placement High temperature soldering: 260°C maximum/10 seconds at terminals • Meets MSL level 1 per J-STD-020C Mechanical Data 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating Mounting Pad Layout 0.012 (0.30) REF Dimensions in inches and (millimeters) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.100 (2.54) 0.050 (1.27) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) Maximum Ratings & Thermal Characteristics (T Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current see Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction and Storage temperature range Symbol VRM IF(AV) IFSM RθJA RθJL RθJC TJ, TSTG A = 25°C unless otherwise noted.) ES1PA EA 50 ES1PB EB 100 1.0 30 ES1PC EC 150 ES1PD ED 200 Unit V A A °C/W °C 105 15 20 –55 to +150 Electrical Characteristics (TA = 25°C unless otherwise noted.) Parameter Symbol Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C VF at IF=1A, TJ=25°C Maximum reverse current TJ = 25°C IR at rated VRM(2) TJ =125°C Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr Typical reverse recovery time at TJ=25°C trr at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C Typical reverse recovery time at TJ=25°C Qrr at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C Typical junction capacitance at 4.0V, 1MHz CJ Value 0.865 0.920 5.0 500 15 25 30 8 10 10 Unit V µA ns ns nC pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body (2) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88918 23-Sep-04 www.vishay.com 1 ES1PA thru ES1PD Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Maximum Forward Current Derating Curve 1.2 30 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Average Forward Rectified Current (A) Peak Forward Surge Current (A) 1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 0 80 90 100 110 120 130 140 150 25 20 15 10 05 0 1 10 100 Lead Temperature (°C) Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics 100 10000 Fig. 4 – Typical Reverse Leakage Characteristics Instantaneous Reverse Current (µA) 1000 100 TJ = 150°C Instantaneous Forward Current (A) 10 TJ = 150°C TJ = 125°C 1 TJ = 25°C 0.1 TJ = 125°C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.1 0.01 10 20 30 40 50 60 70 80 90 100 TJ = 25°C Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance 100 1000 Fig. 6 – Typical Transient Thermal Impedance Transien Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 10 1 0.1 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) t, Pulse Duration (sec.) www.vishay.com 2 Document Number 88918 23-Sep-04