ES3G

ES3F & ES3G Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 3.0 A 300 V, 400 V 100 A 35 ns 1.1 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum RMS voltage Maximum average forward rectified current at TL = 110 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM VRWM VRMS IF(AV) IFSM TJ, TSTG SYMBOL ES3F EF 300 225 210 3.0 100 - 55 to + 150 ES3G EG 400 300 280 V V V A A °C UNIT Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 ES3F & ES3G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum DC reverse current at working peak reverse voltage Maximum reverse recovery time Maximum reverse recovery time Maximum reverse recovery current Maximum stored charge Typical junction capacitance TEST CONDITIONS 3.0 A TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM 4.0 V, 1 MHz SYMBOL VF IR trr trr IRM Qrr CJ ES3F 1.1 10 350 35 50 3.0 50 30 ES3G UNIT V µA ns ns A nC pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) Note: (1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas SYMBOL RθJA RθJL ES3F 50 15 ES3G UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N ES3G-E3/57T ES3G-E3/9AT ES3GHE3/57T (1) ES3GHE3/9AT (1) UNIT WEIGHT (g) 0.211 0.211 0.211 0.211 PREFERRED PACKAGE CODE 57T 9AT 57T 9AT BASE QUANTITY 850 3500 850 3500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.0 150 Resistive or Inductive Load Average Forward Rectified Current (A) Peak Forward Surge Current (A) 125 8.3 ms Single Half Sine-Wave at TL = 110 °C 2.0 100 75 1.0 50 25 0 80 90 100 110 120 130 140 150 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com ES3F & ES3G Vishay General Semiconductor 100 100 TJ = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C Junction Capacitance (pF) 1.5 10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance 10 000 3.0 D = 0.5 TJ = 150 °C D = 0.3 D = 0.2 2.0 D = 0.1 D = 0.8 Instantaneous Reverse Leakage Current (µA) TJ = 125 °C 100 TJ = 100 °C Average Power Loss (W) 1000 2.5 D = 1.0 1.5 T 10 TJ = 25 °C 1.0 1 0.5 D = tp/T tp 3.0 3.5 0.1 0 20 40 60 80 100 0 0 0.5 1.0 1.5 2.0 2.5 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Figure 4. Typical Reverse Leakage Characteristics Figure 7. Forward Power Loss Characteristics 200 Recovered Stored Charge/ Reverse Recovery Time nC/ns at 5 A, 50 A/µs 160 120 at 2 A, 20 A/µs at 5 A, 50 A/µs 80 at 2 A, 20 A/µs at 1 A, 100 A/µs 40 at 1 A, 100 A/µs trr Qrr 25 50 75 100 125 150 175 0 Junction Temperature (°C) Figure 5. Reverse Switching Characteristics Document Number: 88590 Revision: 20-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 ES3F & ES3G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band 0.185 (4.69) MAX. Mounting Pad Layout 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) MIN. 0.320 REF. 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88590 Revision: 20-Nov-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1