VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current
2L TO-220AC
Base cathode 2
2L TO-220 FULL-PAK
• Fully isolated package (VINS = 2500 VRMS) • True 2 pin package • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47
1 Cathode
3 Anode
1 Cathode
2 Anode
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
VS-ETH3006-M3
VS-ETH3006FP-M3
PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 2L TO-220AC, 2L TO-220FP 30 A 600 V 2.65 V 27 ns 175 °C Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER Peak repetitive reverse voltage Average rectified forward current in DC Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM FULL-PAK IF(AV) IFSM TJ, TStg TC = 131 °C TC = 51 °C TJ = 25 °C TEST CONDITIONS VALUES 600 30 180 - 65 to 175 °C UNITS V
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA I F = 30 A IF = 30 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.0 1.4 0.02 50 20 8 MAX. 2.65 1.8 30 300 μA pF nH V UNITS
Reverse leakage current Junction capacitance Series inductance
Document Number: 93523 Revision: 18-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 30 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 26 26 70 3.5 7.6 50 280 MAX. 35 A ns UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Weight Mounting torque Marking device Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6 (5) TYP. 0.84 3.2 0.5 2 0.07 MAX. 175 1.3 3.8 70 12 (10) ETH3006 ETH3006FP g oz. kgf · cm (lbf · in) °C/W UNITS °C
FULL-PAK
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For technical questions within your region, please contact one of the following: Document Number: 93523 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors
1000
Reverse Current - IR (µA)
1000 175° C 100 10 1 75° C 0.1 0.01 25° C 0.001 50° C 150° C 125° C 100° C
Instantaneous Forward Current - IF (A)
100 Tj = 175° C
0.0001 0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
Junction Capacitance - CT (pF)
10
Tj = 150° C
100
Tj = 25° C
10
1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1 0 100 200 300 400 500 600
Forward Voltage Drop - VF (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance ZthJC (°C/W)
D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
0.01 1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93523 Revision: 18-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
10
Thermal Impedance ZthJC (°C/W)
D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
0.1 1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C) Allowable Case Temperature (°C)
180 160 140 120 100 80 60 40 20 0 5 10 15 20 25 30 35 DC
170 160 150 140 130 120 0 5 10 15 20 25 30 35 Average Forward Current - IF(AV)(A) DC
Average Forward Current - IF(AV)(A)
Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK)
Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current
80
Average Power Loss ( Watts )
RMS Limit 60
40
20
D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC
0 0 5 10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
Fig. 8 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 93523 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Hyperfast Rectifier, 30 A FRED Pt® Vishay Semiconductors
90
900 800 700 600
80
70
If = 30 A, 125° C
60
Qrr ( nC )
If = 30 A, 125° C 500 400 300
trr ( ns )
50
40 If = 30 A, 25° C
30
200 If = 30 A, 25° C 100 typical value 0 1000 100 1000
20
typical value
10 100
di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. dIF/dt
VR = 200 V
di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. dIF/dt
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93523 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS1 1 2 3 4 5 6 7 8 -
E
2
T
3
H
4
30
5
06
6
FP
7
-M3
8
Vishay Semiconductors product Circuit configuration: E = Single diode T = TO-220 H = Hyperfast recovery time Current code: 30 = 30 A Voltage code: 06 = 600 V None = TO-220 FP = FULL-PAK Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
-
ORDERING INFORMATION (Example)
PREFERRED P/N VS-ETH3006-M3 VS-ETH3006FP-M3 QUANTITY PER TUBE 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube
LINKS TO RELATED DOCUMENTS Dimensions 2L TO-220AC 2L TO-220 FULL-PAK 2L TO-220AC 2L TO-220 FULL-PAK www.vishay.com/doc?95259 www.vishay.com/doc?95260 www.vishay.com/doc?95391 www.vishay.com/doc?95392
Part marking information
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For technical questions within your region, please contact one of the following: Document Number: 93523 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
True 2 Pin TO-220
DIMENSIONS in millimeters and inches
0.002" A E ØP B Q H1 A F 0.05 mm
D 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b
Term. 4
c
60° 1 e 2 J1
SYMBOL A b b1 c D E e F H1 J1 L L1
(1)
MILLIMETERS MIN. 4.32 0.71 1.15 0.36 14.99 10.04 5.08 BSC 1.22 5.97 2.54 13.47 3.31 3.79 2.60 1.37 6.47 2.79 13.97 3.81 3.88 2.84 0.048 0.235 0.100 0.530 0.130 0.149 0.102 MAX. 4.57 0.91 1.39 0.53 15.49 10.41 MIN. 0.170 0.028 0.045 0.014 0.590 0.395
INCHES MAX. 0.180 0.036 0.055 0.021 0.610 0.410 0.200 BSC 0.054 0.255 0.110 0.550 0.150 0.153 0.112
ØP Q
Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch
Document Number: 95259 Revision: 21-Jan-10
For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com
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Outline Dimensions
Vishay High Power Products
True 2 Pin TO-220 FULL-PAK
DIMENSIONS in millimeters and inches
A ØQ F E
Q1 H1 D Q2
θ L1 b1
L b
e J1
C
SYMBOL A b b1 C D E e F H1 J1 L L1 ØQ Q1 Q2 θ
MILLIMETERS MIN. 4.53 0.71 1.15 0.36 15.67 9.96 5.08 typical 2.34 6.50 2.56 12.78 2.23 2.98 3.10 14.80 0° 2.74 6.90 2.96 13.18 2.63 3.38 3.50 15.20 5° 0.092 0.256 0.101 0.503 0.088 0.117 0.122 0.583 0° MAX. 4.93 0.91 1.39 0.53 16.07 10.36 MIN. 0.178 0.028 0.045 0.014 0.617 0.392
INCHES MAX. 0.194 0.036 0.055 0.021 0.633 0.408 0.200 typical 0.107 0.272 0.117 0.519 0.104 0.133 0.138 0.598 5°
Document Number: 95260 Revision: 22-Jan-10
For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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