ETU3006-M3

VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC Base cathode 2 2L TO-220 FULL-PAK • Fully isolated package (VINS = 2500 VRMS) • True 2 pin package • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47 1 Cathode 3 Anode 1 Cathode 2 Anode DESCRIPTION Ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. VS-ETU3006-M3 VS-ETU3006FP-M3 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 2L TO-220AC, 2L TO-220FP 30 A 600 V 2V 30 ns 175 °C Single die APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current in DC Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM FULL-PAK IF(AV) IFSM TJ, TStg TC = 130 °C TC = 72 °C TJ = 25 °C TEST CONDITIONS VALUES 600 30 200 - 65 to 175 °C UNITS V A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA I F = 30 A IF = 30 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 1.4 1.15 0.02 30 20 8 MAX. 2.0 1.35 30 250 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93538 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 30 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 30 45 100 5.6 10 127 580 MAX. 45 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Weight Mounting torque Marking device Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6 (5) TYP. 0.84 3.2 0.5 2 0.07 MAX. 175 1.3 3.8 70 12 (10) ETU3006 ETU3006FP g oz. kgf · cm (lbf · in) °C/W UNITS °C FULL-PAK For technical questions within your region, please contact one of the following: Document Number: 93538 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 VS-ETU3006-M3, VS-ETU3006FP-M3 Ultrafast Rectifier, 30 A FRED Pt® Vishay Semiconductors 1000 Reverse Current - IR (µA) 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 175° C 150° C 125° C 100° C 75° C 50° C 25° C Instantaneous Forward Current - IF (A) 100 Tj = 175° C Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 150° C Junction Capacitance - CT (pF) 10 100 Tj = 25° C 10 1 0.0 0.5 1.0 1.5 2.0 2.5 1 0 100 200 300 400 500 600 Forward Voltage Drop - VF (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93538 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors 10 Ultrafast Rectifier, 30 A FRED Pt® Thermal Impedance ZthJC (°C/W) D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 180 Allowable Case Temperature (°C) 180 Allowable Case Temperature (°C) 170 160 150 140 130 120 0 5 10 15 20 25 30 35 Average Forward Current - IF(AV)(A) DC 160 140 120 100 80 60 40 20 0 5 10 15 20 25 30 35 Average Forward Current - IF(AV)(A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) DC Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 60 Average Power Loss ( Watts ) 50 40 30 20 10 0 0 5 RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 93538 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 VS-ETU3006-M3, VS-ETU3006FP-M3 Ultrafast Rectifier, 30 A FRED Pt® Vishay Semiconductors 130 120 110 100 90 If = 30 A, 125° C 1800 1600 1400 1200 Qrr ( nC ) trr ( ns ) 80 70 60 50 40 30 20 10 100 1000 typical value If = 30 A, 25° C 1000 800 600 400 200 If = 30 A, 125° C If = 30 A, 25° C typical value 0 100 1000 di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. dIF/dt VR = 200 V di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. dIF/dt 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93538 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - E 2 T 3 U 4 30 5 06 6 FP 7 -M3 8 Vishay Semiconductors product Circuit configuration: E = Single diode T = TO-220 U = Hyperfast recovery time Current code: 30 = 30 A Voltage code: 06 = 600 V None = TO-220 FP = FULL-PAK Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free - ORDERING INFORMATION (Example) PREFERRED P/N VS-ETU3006-M3 VS-ETU3006FP-M3 QUANTITY PER TUBE 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions 2L TO-220AC 2L TO-220 FULL-PAK 2L TO-220AC 2L TO-220 FULL-PAK www.vishay.com/doc?95259 www.vishay.com/doc?95260 www.vishay.com/doc?95391 www.vishay.com/doc?95392 Part marking information For technical questions within your region, please contact one of the following: Document Number: 93538 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 6 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" A E ØP B Q H1 A F 0.05 mm D 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b Term. 4 c 60° 1 e 2 J1 SYMBOL A b b1 c D E e F H1 J1 L L1 (1) MILLIMETERS MIN. 4.32 0.71 1.15 0.36 14.99 10.04 5.08 BSC 1.22 5.97 2.54 13.47 3.31 3.79 2.60 1.37 6.47 2.79 13.97 3.81 3.88 2.84 0.048 0.235 0.100 0.530 0.130 0.149 0.102 MAX. 4.57 0.91 1.39 0.53 15.49 10.41 MIN. 0.170 0.028 0.045 0.014 0.590 0.395 INCHES MAX. 0.180 0.036 0.055 0.021 0.610 0.410 0.200 BSC 0.054 0.255 0.110 0.550 0.150 0.153 0.112 ØP Q Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Document Number: 95259 Revision: 21-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b e J1 C SYMBOL A b b1 C D E e F H1 J1 L L1 ØQ Q1 Q2 θ MILLIMETERS MIN. 4.53 0.71 1.15 0.36 15.67 9.96 5.08 typical 2.34 6.50 2.56 12.78 2.23 2.98 3.10 14.80 0° 2.74 6.90 2.96 13.18 2.63 3.38 3.50 15.20 5° 0.092 0.256 0.101 0.503 0.088 0.117 0.122 0.583 0° MAX. 4.93 0.91 1.39 0.53 16.07 10.36 MIN. 0.178 0.028 0.045 0.014 0.617 0.392 INCHES MAX. 0.194 0.036 0.055 0.021 0.633 0.408 0.200 typical 0.107 0.272 0.117 0.519 0.104 0.133 0.138 0.598 5° Document Number: 95260 Revision: 22-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1