ETX0806-M3

VS-ETX0806-M3, VS-ETX0806FP-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC Base cathode 2 2L TO-220 FULL-PAK • Fully isolated package (VINS = 2500 VRMS) • True 2 pin package • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47 1 Cathode 3 Anode 1 Cathode 2 Anode DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. VS-ETX0806-M3 VS-ETX0806FP-M3 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 2L TO-220AC, 2L TO-220FP 8A 600 V 3.4 V 14 ns 175 °C Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current in DC Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM FULL-PAK IF(AV) IFSM TJ, TStg TC = 142 °C TC = 105 °C TJ = 25 °C TEST CONDITIONS VALUES 600 8 80 - 65 to 175 °C UNITS V A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.5 1.5 0.02 21 6 8 MAX. 3.4 2.0 30 150 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93546 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806-M3, VS-ETX0806FP-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr trr IRRM Qrr TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 14 15 17 33 2.6 4.3 22 77 26 11 150 MAX. 18 24 A ns UNITS Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Weight Mounting torque Marking device Case style 2L TO-220AC Case style 2L TO-220 FULL-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6 (5) TYP. 2.0 4.6 0.5 2 0.07 MAX. 175 2.6 5.5 70 12 (10) ETX0806 ETX0806FP g oz. kgf · cm (lbf · in) °C/W UNITS °C FULL-PAK For technical questions within your region, please contact one of the following: Document Number: 93546 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 VS-ETX0806-M3, VS-ETX0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 100 100 175° C 10 150° C 125° C 1 0.1 0.01 0.001 0.0001 0 100 200 300 400 500 600 100° C 75° C 50° C 25° C Tj = 175° C Instantaneous Forward Current - IF (A) 10 Reverse Current - IR (µA) Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Tj = 150° C Junction Capacitance - CT (pF) 1 100 Tj = 25° C 10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 0 100 200 300 400 500 600 Forward Voltage Drop - VF (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93546 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806-M3, VS-ETX0806FP-M3 Vishay Semiconductors 10 Hyperfast Rectifier, 8 A FRED Pt® Thermal Impedance ZthJC (°C/W) D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 180 Allowable Case Temperature (°C) 180 Allowable Case Temperature (°C) 160 140 120 100 80 60 DC 160 DC 140 120 100 0 2 4 6 8 10 Average Forward Current - IF(AV)(A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 22 0 2 4 6 8 10 Average Forward Current - IF(AV)(A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Average Power Loss ( Watts ) 20 18 16 14 12 10 8 6 4 2 0 0 RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 2 4 6 8 10 12 Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 93546 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 VS-ETX0806-M3, VS-ETX0806FP-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 40 250 35 200 If = 8A, 125° C 30 150 25 If = 8A, 125° C Qrr ( nC ) trr ( ns ) 100 If = 8A, 25° C 50 20 If = 8A, 25° C 15 typical value 10 100 1000 typical value 0 100 1000 di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. dIF/dt VR = 200 V di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. dIF/dt 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93546 Revision: 11-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806-M3, VS-ETX0806FP-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - E 2 T 3 X 4 08 5 06 6 FP 7 -M3 8 Vishay Semiconductors product Circuit configuration: E = Single diode T = TO-220 X = Hyperfast recovery time Current code: 08 = 8 A Voltage code: 06 = 600 V None = TO-220 FP = FULL-PAK Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free - ORDERING INFORMATION (Example) PREFERRED P/N VS-ETX0806-M3 VS-ETX0806FP-M3 QUANTITY PER TUBE 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions 2L TO-220AC 2L TO-220 FULL-PAK 2L TO-220AC 2L TO-220 FULL-PAK www.vishay.com/doc?95259 www.vishay.com/doc?95260 www.vishay.com/doc?95391 www.vishay.com/doc?95392 Part marking information For technical questions within your region, please contact one of the following: Document Number: 93546 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 6 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" A E ØP B Q H1 A F 0.05 mm D 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b Term. 4 c 60° 1 e 2 J1 SYMBOL A b b1 c D E e F H1 J1 L L1 (1) MILLIMETERS MIN. 4.32 0.71 1.15 0.36 14.99 10.04 5.08 BSC 1.22 5.97 2.54 13.47 3.31 3.79 2.60 1.37 6.47 2.79 13.97 3.81 3.88 2.84 0.048 0.235 0.100 0.530 0.130 0.149 0.102 MAX. 4.57 0.91 1.39 0.53 15.49 10.41 MIN. 0.170 0.028 0.045 0.014 0.590 0.395 INCHES MAX. 0.180 0.036 0.055 0.021 0.610 0.410 0.200 BSC 0.054 0.255 0.110 0.550 0.150 0.153 0.112 ØP Q Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Document Number: 95259 Revision: 21-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b e J1 C SYMBOL A b b1 C D E e F H1 J1 L L1 ØQ Q1 Q2 θ MILLIMETERS MIN. 4.53 0.71 1.15 0.36 15.67 9.96 5.08 typical 2.34 6.50 2.56 12.78 2.23 2.98 3.10 14.80 0° 2.74 6.90 2.96 13.18 2.63 3.38 3.50 15.20 5° 0.092 0.256 0.101 0.503 0.088 0.117 0.122 0.583 0° MAX. 4.93 0.91 1.39 0.53 16.07 10.36 MIN. 0.178 0.028 0.045 0.014 0.617 0.392 INCHES MAX. 0.194 0.036 0.055 0.021 0.633 0.408 0.200 typical 0.107 0.272 0.117 0.519 0.104 0.133 0.138 0.598 5° Document Number: 95260 Revision: 22-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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