ETX1506-1-M3

New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETX1506S-M3 Base cathode 2 VS-ETX1506-1-M3 • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified according to JEDEC-JESD47 2 DESCRIPTION/APPLICATIONS 1 N/C 3 Anode 1 N/C 3 Anode D2PAK TO-262 State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-263AB (D2PAK), TO-262AA 15 A 600 V 3.4 V 18 ns 175 °C Single die These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TC = 127 °C TC = 25 °C TEST CONDITIONS MAX. 600 15 120 - 65 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 15 A IF = 15 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.5 1.55 0.02 40 12 8.0 MAX. 3.4 2 36 250 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93594 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr trr IRRM Qrr TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 15 A dIF/dt = 800 A/μs VR = 390 V I F = 15 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 17 18 20 45 2.7 5.5 26 130 32 17 290 MAX. 23 30 A ns UNITS Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style D2PAK modified Case style TO-262 SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6 (5) TYP. 1.3 0.5 2.0 0.07 MAX. 175 1.51 70 12 (10) ETX1506S ETX1506-1 g oz. kgf · cm (lbf · in) UNITS °C °C/W www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 93594 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Hyperfast Rectifier, 15 A FRED Pt® Vishay Semiconductors 100 1000 175 °C 100 Reverse Current - IR (μA) 150 °C 10 1 75 °C 0.1 0.01 50 °C 25 °C 125 °C 100 °C TJ = 175 °C Instandaneous Forward Current IF (A) 0.001 100 200 300 400 500 600 Reverse Voltage - VR (V) 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 TJ = 150 °C Junction Capacitance - CT (pF) 3.0 3.5 4.0 TJ = 25 °C 10 1 0.5 1.0 1.5 2.0 2.5 1 0 100 200 300 400 500 600 Forward voltage drop VFM (V) Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 t 1E-03 1E-02 1E-01 1E+00 1, Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics Document Number: 93594 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® 180 Allowable Case Temperature (°C) 170 160 Average Power Loss (W) 150 140 130 120 110 100 0 2 4 6 8 10 12 14 16 18 20 22 DC 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 Average Forward Current - IF(AV) (A) D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC RMS Limit Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 55 50 350 300 45 IF = 15 A, 125 °C 250 40 200 Qrr (nC) 35 trr (ns) IF = 15 A, 125 °C 150 30 25 IF = 15 A, 25 °C 20 IF = 15 A, 25 °C 50 15 typical value 10 100 dIF/dt (A/μs) 1000 0 100 dIF/dt (A/μs) typical value 1000 100 Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 93594 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Hyperfast Rectifier, 15 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93594 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-ETX1506S-M3, VS-ETX1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 - E 2 T 3 X 4 15 5 06 6 S 7 TRL -M3 8 9 Vishay Semiconductors product Circuit configuration E = Single diode T = TO-220 X = Hyperfast recovery time Current code (15 = 15 A) 6 7 8 - Voltage code (06 = 600 V) • S = D2PAK • -1 = TO-262 • None = Tube (50 pieces) • TRL = Tape and reel (left oriented, for D2PAK package) • TRR = Tape and reel (right oriented, for D2PAK package) -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free 9 - ORDERING INFORMATION (Example) PREFERRED P/N VS-ETX1506S-M3 VS-ETX1506-1-M3 VS-ETX1506STRR-M3 VS-ETX1506STRL-M3 QUANTITY PER TUBE 50 50 800 800 MINIMUM ORDER QUANTITY 1000 1000 800 800 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube 13" diameter reel 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions TO-263AB (D2PAK) TO-262AA TO-263AB (D2PAK) TO-262AA TO-263AB (D2PAK) www.vishay.com/doc?95046 www.vishay.com/doc?95419 www.vishay.com/doc?95444 www.vishay.com/doc?95443 www.vishay.com/doc?95032 Part marking information Packaging information www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 93594 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A c2 B A E D B B L (2) 3 x b2 3xb 2xe 0.010 M A M B c A1 A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3) Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4) (b, b2) Section B - B and C - C Scale: None Lead tip SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2 MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71 (4) (5) (6) INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346 NOTES 4 4 4 2 3 2, 3 3 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com 1 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1