FB190SA10

VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance SOT-227 • Low internal inductance • Optimized for SMPS applications • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VDSS ID DC RDS(on) Type Package 100 V 190 A 0.0065  Modules - MOSFET SOT-227 DESCRIPTION High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Linear derating factor Gate to source voltage Single pulse avalanche energy Avalanche current Repetitive avalanche energy Peak diode recovery dV/dt Operating junction and storage temperature range Insulation withstand voltage (AC-RMS) Mounting torque VGS EAS IAR (2) (1) SYMBOL ID IDM PD TEST CONDITIONS TC = 40 °C TC = 100 °C TC = 25 °C MAX. 190 130 720 568 2.7 ± 20 700 180 48 5.7 - 55 to + 150 2.5 UNITS A W W/°C V mJ A mJ V/ns °C kV Nm EAR (1) dV/dt (3) TJ, TStg VISO M4 screw 1.3 Notes (1) Repetitive rating; pulse width limited by maximum junction temperature. (2) Starting T = 25 °C, L = 43 μH, R = 25 , I J g AS = 180 A. (3) I SD  180 A, dI/dt  83 A/μs, VDD  V(BR)DSS, TJ  150 °C. Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A THERMAL RESISTANCE PARAMETER Junction to case Case to heatsink, flat, greased surface SYMBOL RthJC RthCS MIN. TYP. 0.05 MAX. 0.22 UNITS °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current SYMBOL V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss TEST CONDITIONS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VGS = 10 V, ID = 180 A VDS = VGS, ID = 250 μA VDS = 25 V, ID = 180 A VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 °C VGS = 20 V VGS = - 20 V ID = 180 A VDS = 80 V VGS = 10 V VDD = 50 V ID = 180 A Rg = 2.0(internal) RD = 0.27 Between lead, and center of die contact VGS = 0 V VDS = 25 V f = 1.0 MHz MIN. 100 2.0 93 TYP. 0.093 0.0054 3.3 250 40 110 45 351 181 335 5.0 10 700 2800 1300 MAX. 0.0065 4.35 50 500 200 - 200 pF nH ns nC UNITS V V/°C  V S μA Gate to source forward leakage Total gate charge Gate to source charge Gate to drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Internal source inductance Input capacitance Output capacitance Reverse transfer capacitance nA SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge Forward turn-on time SYMBOL IS ISM VSD trr Qrr ton TEST CONDITIONS D MIN. S TYP. 1.0 300 2.6 MAX. 190 UNITS MOSFET symbol showing the integral reverse p-n junction diode. A G 740 1.3 V ns μC TJ = 25 °C, IS = 180 A, VGS = 0 V TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors 2.5 1000 TOP R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ID = 180A 2.0 100 1.5 4.5V 10 1.0 0.5 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 1000 20000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C, Capacitance (pF) 15000 100 Ciss 10000 4.5V Coss 5000 10 Crss 1 0.1 20μs PULSE WIDTH TJ = 150 °C 1 10 100 0 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 20 1000 ID = 180 A VDS = 80V VDS = 50V VDS = 20V I D , Drain-to-Source Current (A) TJ = 150 ° C VGS , Gate-to-Source Voltage (V) V DS = 25V 20µs PULSE WIDTH 15 100 TJ = 25 ° C 10 10 5 1 4 5 6 7 0 10 0 50 100 150 200 FOR TEST CIRCUIT SEE FIGURE 13 250 300 350 400 8 9 VGS , Gate-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Vishay Semiconductors 1000 Power MOSFET, 190 A 175 Allowable Case Temperature (°C) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C 150 125 DC 100 10 TJ = 25 ° C 1 75 50 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 25 0 25 50 75 100 125 150 175 200 VSD ,Source-to-Drain Voltage (V) I D , Drain Current in DC (A) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 10us I D , Drain Current (A) VDS VGS 100us 1ms RD D.U.T. + - VDD 100 RG 10 10ms 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors 1 ZthJC - Thermal Impedance (°C/W) 0.75 0.5 0.1 0.3 0.2 0.1 Single pulse (thermal resistance) DC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS , Single Pulse Avalanche Energy (mJ) 1500 1200 ID 71A 100A BOTTOM 160A TOP 15 V 900 VDS RG 20 V L Driver 600 D.U.T IAS tp 0.01 Ω + - VDD A 300 0 25 50 75 100 125 150 Starting T , Junction Temperature ( ° C) J Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current V (B R )D S S tp QG 10 V QGS VG IAS QGD Charge Fig. 12b - Unclamped Inductive Waveforms Fig. 13a - Basic Gate Charge Waveform Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF + V - DS D.U.T. VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit D.U.T. + 3 Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + 2 - - 4 + 1 RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test + VDD Fig. 13c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F B 190 S A 10 1 1 2 3 4 5 6 7 - 2 3 4 5 6 7 Vishay Semiconductors product Power MOSFET Generation 5 MOSFET Current rating (190 = 190 A) Single switch Package indicator (SOT-227) Voltage rating (10 = 100 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) G (2) 2 (G) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 4 (S) 1 (S) (S) (G) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95423 www.vishay.com/doc?95425 Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A4 x M4 nuts 12.50 (0.492) 13.00 (0.512) 6.25 (0.246) 6.50 (0.256) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 4x 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 2.20 (0.087) 1.90 (0.075) 4.10 (0.161) 4.50 (0.177) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) 12.30 (0.484) 11.70 (0.460) Note • Controlling dimension: millimeter Document Number: 95423 Revision: 15-Nov-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1