FCSP140LTR

VS-FCSP140LTR www.vishay.com Vishay Semiconductors FlipKY®, 1 A Chip Scale Package Schottky Barrier Rectifier FEATURES • Ultra low VF per footprint area • Low leakage • Low thermal resistance • One-fifth footprint of SMA • Super low profile (0.6 mm) • Available tested on tape and reel • Compliant to RoHS Directive 2002/95/EC APPLICATIONS FlipKY® • Reverse polarity protection • Current steering • Freewheeling • Flyback • Oring DESCRIPTION PRODUCT SUMMARY IF(AV) VR VF at IF IRM max. at 25 °C IRM max. at 125 °C TJ max. EAS 1A 40 V 0.38 V 80 μA 20 mA 150 °C 10 mJ Vishay’s FlipKY® product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest VF to PCB footprint area in industry. The four bump 1.5 mm x 1.5 mm devices can deliver up to 1 A and occupy only 2.3 mm2 of board space. The anode and cathode connections are made through solder bump pads on one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency. Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM VF TJ 1 Apk, TJ = 125 °C Rectangular waveform CHARACTERISTICS MAX. 40 1 250 0.38 - 55 to 150 UNITS V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-FCSP140LTR 40 UNITS V Revision: 04-Jul-11 Document Number: 94495 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP140LTR www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current at 25 °C Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TEST CONDITIONS 50 % duty cycle at TPCB = 112 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 1.0 250 21 10 2.0 mJ A A UNITS TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL 1A Maximum forward voltage drop See fig. 1 VFM (1) TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TJ = 25 °C VR = 20 V VR = 10 V VR = 5 V VR = Rated VR TJ = 125 °C VR = 20 V VR = 10 V VR = 5 V TYP. 0.43 0.51 0.34 0.46 10 3.5 2 1.5 9 3.5 2.5 2 - MAX. 0.48 0.56 0.38 0.53 80 20 10 5 20 8 6 5 160 10 000 UNITS 2A 1A 2A V µA Maximum reverse leakage current See fig. 2 IRM (1) mA Maximum junction capacitance Maximum voltage rate of charge Note (1) Pulse width < 300 μs, duty cycle < 2 % CT dV/dt VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Rated VR pF V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Typical thermal resistance, junction to PCB Maximum thermal resistance, junction to ambient Notes (1) (2) SYMBOL TJ (1), TStg RthJL (2) RthJA DC operation TEST CONDITIONS VALUES - 55 to 150 40 UNITS °C °C/W 62 dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 04-Jul-11 Document Number: 94495 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP140LTR www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) 160 DC D = 3/4 D = 1/2 D = 1/3 D = 1/4 D = 1/5 10 IF - Instantaneous Forward Current (A) 140 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 120 100 Square wave (D = 0.50) 80 % VR applied See note (1) 0.1 80 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 100 0.7 IR - Reverse Current (mA) 10 TJ = 125 °C 1 Average Power Loss (W) TJ = 150 °C 0.6 0.5 0.4 0.3 0.2 0.1 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 TJ = 100 °C TJ = 75 °C RMS limit DC 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 5 10 15 20 25 30 35 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics (Per Leg) 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C IFSM - Non-Repetitive Surge Current (A) At any rated load condition and with rated VRRM applied following surge 100 10 10 0 5 10 15 20 25 30 35 40 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) (1) tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at 80 % VR applied Document Number: 94495 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 04-Jul-11 VS-FCSP140LTR www.vishay.com Vishay Semiconductors L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 7 - Unclamped Inductive Test Circuit LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95282 www.vishay.com/doc?95281 www.vishay.com/doc?95062 Revision: 04-Jul-11 Document Number: 94495 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products FlipKY® 1 A/1.5 A (Large Bump Pad Design) DIMENSIONS in millimeters Ball assignments 0.10 (0.004) C 2x B 1.524 A 1 = Cathode 2 = Cathode 3 = Anode 4 = Anode 0.10 (0.004) C 2x 0.600 0.520 0.205 0.175 4 2 x 0.400 3 1.524 1.524 0.300 1 2 0.800 4x Recommended footprint 0.395 0.355 0.800 Cathode ball 1 Cathode ball 2 0.800 Anode ball 4 Anode ball 3 4 x Ø 0.35 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter Document Number: 95282 Revision: 02-Apr-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1