FEP30JP-E3-45

FEP30JP-E3-45

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    FEP30JP-E3-45 - Dual Common Cathode Ultrafast Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
FEP30JP-E3-45 数据手册
FEP30AP thru FEP30JP Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance 3 2 1 • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 30 A 50 V to 600 V 300 A 35 ns, 50 ns PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum 0.95 V, 1.3 V, 1.5 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 100 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating storage and temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG FEP 30AP 50 35 50 FEP 30BP 100 70 100 FEP 30CP 150 105 150 FEP 30DP 200 140 200 30 300 - 55 to + 150 FEP 30FP 300 210 300 FEP 30GP 400 280 400 FEP 30HP 500 350 500 FEP 30JP 600 420 600 UNIT V V V A A °C/W Document Number: 88597 Revision: 08-Apr-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 FEP30AP thru FEP30JP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Typical junction capacitance per diode TEST CONDITIONS 15.0 A TC = 25 °C IR TC = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz trr 35 500 50 ns SYMBOL VF FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP 1.3 10 μA FEP 30HP 1.5 FEP 30JP UNIT V 0.95 CJ 175 145 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC (1) FEP 30AP FEP 30BP FEP 30CP FEP 30DP 1.0 FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT °C/W Note (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE TO-247AD PREFERRED P/N FEP30JP-E3/45 UNIT WEIGHT (g) 6.15 PACKAGE CODE 30 BASE QUANTITY 30/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 36 300 Peak Forward Surge Current (A) Resistive or Inductive Load TC = 100 °C 8.3 ms Single Half Sine-Wave 250 Average Forward Current (A) 30 200 24 150 12 100 6 50 0 0 50 100 150 0 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88597 Revision: 08-Apr-10 FEP30AP thru FEP30JP Vishay General Semiconductor 100 1000 Pulse Width = 300 μs 1 % Duty Cycle TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Ins tantaneous Forward Current (A) 10 TJ = 125 °C Junction Capacitance (pF) 100 1 TJ = 25 °C 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 V to 400 V 500 V to 600 V 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 Instantaneous Reverse Current (μA) 50 V to 200 V 300 V to 600 V 100 TJ = 125 °C 10 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10° TYP. Both Sides 0.078 (1.98) REF. 10 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1° REF. Both Sides 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 2 CASE Document Number: 88597 Revision: 08-Apr-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
FEP30JP-E3-45
1. 物料型号: - FEP30AP至FEP30JP,由Vishay General Semiconductor生产。

2. 器件简介: - 该器件为双共阴超快速整流器,具有玻璃钝化芯片结构,高浪涌能力,符合RoHS和WEEE标准,低开关损耗,高效率,低热阻和超快恢复时间。

3. 引脚分配: - 封装为TO-247AD(TO-3P),引脚为亚光锡镀层,可按照J-STD-002和JESD22-B102标准焊接,符合JESD 201 1A级须根测试,极性标记,最大安装扭矩为10英寸磅。

4. 参数特性: - 包括最大重复峰值反向电压(VRRM)、最大RMS电压(VRMS)、最大直流阻断电压(VDC)、在Tc=100°C时的最大平均正向整流电流(IF(AV))、每个二极管的峰值正向浪涌电流(IFSM)等。

5. 功能详解: - 该器件适用于高频整流器、开关电源、逆变器、自由轮二极管、DC-DC转换器等功率开关应用。

6. 应用信息: - 用于开关模式电源的高频整流、逆变器、自由轮二极管、DC-DC转换器等功率开关应用。

7. 封装信息: - 封装为TO-247AD,优选型号为FEP30JP-E3/45,单位重量为6.15克,包装代码为30,基础数量为30/管,交付方式为管装。
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