FGP30B

FGP30B thru FGP30D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF(AV) VRRM IFSM trr VF IR Tj max. 3.0 A 100 V to 200 V 125 A 35 ns 0.95 V 5.0 µA 175 °C ® ed* tent Pa * Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 DO-204AC (DO-15) Features • • • • • • • Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability Meets environmental standard MIL-S-19500 Solder Dip 260 °C, 40 seconds Typical Applications Maximum Ratings TA = 25 °C unless otherwise specified Parameter Maximum RMS voltage Maximum DC blocking voltage N ew For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication Pr od uc t Mechanical Data Symbol VRRM VRMS VDC IF(AV) IFSM TJ, TSTG FGP30B 100 70 100 FGP30C 150 105 150 3.0 125 - 65 to + 175 Case: GP20, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end FGP30D 200 140 200 Unit V V V A A °C Maximum repetitive peak reverse voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 25 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Document Number 88878 10-Aug-05 www.vishay.com 1 FGP30B thru FGP30D Vishay Semiconductors Electrical Characteristics TA = 25 °C unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Test condition at 3.0 A (1) TA = 25 °C TA = 100 °C at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A at 4.0 V, 1 MHz Symbol VF IR trr CJ FGP30B FGP30C 0.95 5.0 50 35 70 FGP30D Unit V µA ns pF Thermal Characteristics TA = 25 °C unless otherwise specified Parameter Typical thermal resistance Notes: (1) Thermal resistance from juction to ambient at 0.375" (9.5 mm) lead length and mounted on P.C.B. with 1.1 x 1.1 (30 x 30 mm) copper pads. (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks. (1,2) Symbol RθJA RθJL FGP30B FGP30C 55 20 FGP30D Unit °C/W Ratings and Characteristics Curves (TA = 25 °C unless otherwise specified) Average Forward Rectified Current (A) 3,5 3 2,5 2 1,5 1 0,5 0 0 25 50 75 100 125 150 175 150 TJ = TJ max. 8.3ms Single Half Sine-Wave 125 Peak Forward Surge Current (A) 100 75 50 25 0 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 HZ Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 88878 10-Aug-05 FGP30B thru FGP30D Vishay Semiconductors 100 1000 Tj = 175 °C 10 Tj = 150 °C Tj = 125 °C 1 Tj = 25 °C Instantaneous Forward Current (A) Junction Capacitance (pF) 1,2 100 10 0,1 0,01 0,2 0,4 0,6 0,8 1 1 0,1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Instantaneous Reverse Leakage Current (µA) 100 100 10 Tj = 150 °C Tj = 125 °C 1 Transient Thermal Impedance (°C/W) 100 Tj = 175 °C 10 0,1 0,01 Tj = 25 °C 0,001 20 40 60 80 1 0,01 0,1 1 10 100 Percent of Rated Peak Reverse Voltage (%) tp-Pulse Duration (sec) Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Document Number 88878 10-Aug-05 www.vishay.com 3