GA200SA60S

GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline SOT-227 • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level 600 V 1.33 V 200 A PRODUCT SUMMARY VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 97 °C (1) BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages Note (1) Maximum I RMS current admitted 100 A to do not exceed the maximum temperature of terminals ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL VCES IC (1) TC = 25 °C TC = 97 °C Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature See fig. 15 VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 , See fig. 14 Repetitive rating; pulse width limited by maximum junction temperature Any terminal to case, t = 1 minute TC = 25 °C TC = 100 °C TEST CONDITIONS MAX. 600 342 200 400 A UNITS V Pulsed collector current ICM Clamped Inductive load current Gate to emitter voltage Reverse voltage avalanche energy RMS isolation voltage Maximum power dissipation Operating junction and storage temperature range Mounting torque ILM VGE EARV VISOL PD TJ, TStg 400 ± 20 155 2500 781 312 - 55 to + 150 V mJ V W °C lbf in (N  m) 6-32 or M3 screw 12 (1.3) Note (1) Maximum I RMS current admitted 100 A to do not exceed the maximum temperature of terminals THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case Case to sink, flat, greased surface Weight of module Document Number: 94363 Revision: 22-Jul-10 SYMBOL RthJC RthCS TYP. 0.05 30 MAX. 0.16 UNITS °C/W g www.vishay.com 1 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Emitter to collector breakdown voltage Temperature coeff. of breakdown voltage SYMBOL V(BR)CES V(BR)ECS (1) V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe (2) TEST CONDITIONS VGE = 0 V, IC = 250 μA VGE = 0 V, IC = 1.0 A VGE = 0 V, IC = 1.0 mA IC = 100 A IC = 200 A IC = 100 A, TJ = 150 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 2 mA VCE = 100 V, IC = 100 A VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 10 V, TJ = 150 °C VGE = ± 20 V VGE = 15 V See fig. 2, 5 MIN. 600 18 3.0 90 - TYP. 0.62 1.10 1.33 1.02 - 10 150 - MAX. 1.3 6.0 1.0 10 ± 250 UNITS V V/°C Collector to emitter saturation voltage V Gate threshold voltage Temperature coeff. of threshold voltage Forward transconductance Zero gate voltage collector current Gate to emitter leakage current Notes (1) Pulse width  80 μs; duty factor  0.1 % (2) Pulse width 5.0 μs, single shot mV/°C S mA nA ICES IGES SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) Gate emitter charge (turn-on) Gate collector charge (turn-on) Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Total switching loss Internal emitter inductance Input capacitance Output capacitance Reverse transfer capacitance SYMBOL Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres TEST CONDITIONS IC = 100 A VCC = 400 V VGE = 15 V; See fig. 8 TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 2.0  Energy losses include “tail” See fig. 9, 10, 13 TJ = 150 °C IC = 100 A, VCC = 480 V VGE = 15 V, Rg = 2.0  Energy losses include “tail” See fig. 10, 11, 13 Between lead, and center of the die contact VGE = 0 V VCC = 30 V f = 1.0 MHz; See fig. 7 MIN. TYP. 770 100 260 78 56 890 390 0.98 17.4 18.4 72 60 1500 660 35.7 5.0 16 250 1040 190 MAX. 1200 150 380 1300 580 25.5 pF mJ nH ns mJ ns nC UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 250 Vishay Semiconductors 200 Load Current (A) 150 Square wave: 60 % of rated voltage I For both: Triangular wave: Duty cycle: 50 % I TJ = 125 °C Tsink = 90 °C Clamp voltage: Gate drive as specified 80 % of rated Power dissipation = 140 W 100 50 Ideal diodes 0 0.1 1 10 100 f - Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) IC - Collector to Emitter Current (A) 1000 160 TJ = 150 °C TC - Case Temperature (°C) 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 DC 100 TJ = 25 °C 10 VGE = 15 V 20 µs pulse width 1 0.5 1.0 1.5 2.0 2.5 VCE - Collector to Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Maximum DC Collector Current (A) Fig. 4 - Maximum Collector Current vs. Case Temperature IC - Collector to Emitter Current (A) 1000 VCE - Collector to Emitter Voltage (V) 3 VGE = 15 V 80 µs pulse width TJ = 150 °C TJ = 25 °C 100 2 IC = 400 A IC = 200 A IC = 100 A 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VCC = 50 V 5 µs pulse width 10 5 6 7 VGE - Gate to Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics TJ - Junction Temperature (°C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GA200SA60SP Vishay Semiconductors 1 Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A ZthJC - Thermal Response 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 0.1 1 10 100 0.01 Single pulse (thermal resistance) 0.001 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 30 000 25 Total Switching Losses (mJ) C - Capacitance (pF) 24 000 VGE = 0 V, f = 1 MHz Cies = Cge + Cgc, Cce shorted Cres = Cgc Coes = Cce + Cgc Cies 24 23 22 21 20 19 18 VCC = 480 V VGE = 15 V TJ = 25 °C IC = 200 A 18 000 12 000 Coes 6000 Cres 0 1 10 100 0 10 20 30 40 50 VCE - Collector to Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 20 Rg - Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance 1000 VGE - Gate to Emitter Voltage (V) 16 Total Switching Losses (mJ) VCC = 400 V IC = 100 A RG = 2.0 Ω VGE = 15 V VCC = 480 V IC = 350 A 100 IC = 200 A IC = 100 A 12 8 4 0 0 200 400 600 800 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 QG - Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage TJ - Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 160 RG = 2.0 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 50 V 80 1 40 * Driver same type as D.U.T.; VC = 80 % of VCE (max) 0 100 150 200 250 300 350 Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id 2 1000 V Vishay Semiconductors Total Switching Losses (mJ) 120 L VC* D.U.T. IC - Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 13a - Clamped Inductive Load Test Circuit 1000 IC - Collector Current (A) 100 VGE = 20 V TJ = 125 °C RL = 0 V to 480 V 480 µF 960 V 480 V 4 x IC at 25 °C 10 Safe operating area 1 1 10 100 1000 VCE - Collector to Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50 V 1000 V 1 2 3 D.U.T. VC * Driver same type as D.U.T., VC = 480 V Fig. 14a - Switching Lost Test Circuit Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 1 2 90 % 3 VC 90 % 10 % td (off) 10 % IC 5% tr td (on) Eon Ets = (Eon + Eoff) Eoff tf t = 5 µs Fig. 14b - Switching Loss Waveforms ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 8 - A 2 200 3 S 4 A 5 60 6 S 7 P 8 Insulated Gate Bipolar Transistor (IGBT) Generation 4, IGBT silicon, DBC construction Current rating (200 = 200 A) Single switch, no diode SOT-227 Voltage rating (60 = 600 V) Speed/type (S = Standard speed) None = Standard production P = Lead (Pb)-free www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A CIRCUIT CONFIGURATION 3 (C) Lead assignment E 4 2 (G) 1 E 1, 4 (E) N-channel G C 3 2 Vishay Semiconductors LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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