GA400TD60S

GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Compliant to RoHS Directive 2002/95/EC • Designed for industrial level PRODUCT SUMMARY VCES IC DC at TC = 25 °C VCE(on) (typical) at 400 A, 25 °C 600 V 750 A 1.24 V BENEFITS • Increased operating efficiency • Performance optimized as output inverter stage for TIG welding machines • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation (IGBT) RMS isolation voltage SYMBOL VCES IC (1) ICM ILM IF VGE PD VISOL TC = 25 °C TC = 80 °C Any terminal to case (VRMS t = 1 s, TJ = 25 °C) TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 750 525 1000 A 1000 219 145 ± 20 1563 W 875 3500 V V UNITS V Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Document Number: 93363 Revision: 31-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) TEST CONDITIONS VGE = 0 V, IC = 500 μA VGE = 15 V, IC = 300 A Collector to emitter voltage VCE(on) VGE = 15 V, IC = 400 A VGE = 15 V, IC = 300 A, TJ = 125 °C VGE = 15 V, IC = 400 A, TJ = 125 °C Gate threshold voltage Collector to emitter leakage current VGE(th) ICES VCE = VGE, IC = 250 μA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C IFM = 300 A Diode forward voltage drop VFM IFM = 400 A IFM = 300 A, TJ = 125 °C IFM = 400 A, TJ = 125 °C Gate to emitter leakage current IGES VGE = ± 20 V MIN. 600 3.0 TYP. 1.14 1.24 1.08 1.21 4.6 0.075 1.8 1.48 1.63 1.50 1.70 MAX. 1.35 1.52 V 1.29 1.5 6.3 1 mA 10 1.75 1.98 V 1.77 2.04 ± 200 nA UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge SYMBOL Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA trr Irr Qrr trr Irr Qrr IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 125 °C IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 25 °C TJ = 150 °C, IC = 1000 A, VCC = 400 V, VP = 600 V, Rg = 22 VGE = 15 V to 0 V, L = 500 μH IC = 400 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 125 °C IC = 400 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 25 °C TEST CONDITIONS MIN. TYP. 8.5 113 121.5 21 163 184 532 377 496 1303 Fullsquare 150 43 3.9 236 64 8.6 179 59 6.3 265 80 11.1 ns A μC ns A μC MAX. mJ ns UNITS www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93363 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module case to heatsink: M6 screw Mounting torque case to terminal 1, 2, 3: M5 screw Weight 2 270 4 g RthJC RthCS SYMBOL TJ, TStg MIN. - 40 4 TYP. 0.05 MAX. 150 0.08 0.4 6 Nm °C/W UNITS °C 700 600 500 Allowable Case Temperature (°C) 800 160 140 120 DC 100 80 60 40 20 0 IC (A) 400 300 200 100 0 0.25 TJ = 125 °C TJ = 25 °C 0.50 0.75 1.00 1.25 1.50 1.75 2.00 93363_03 0 100 200 300 400 500 600 700 800 93363_01 VCE (V) Fig. 1 - Typical Output Characteristics, TJ = 25 °C, VGE = 15 V IC - Continuous Collector Current (A) Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature 800 700 600 500 VGE = 12 V VGE = 15 V VGE = 18 V VGE = 9 V 1.7 1.6 1.5 1.4 1.3 600 A VCE (V) 400 A IC (A) 400 300 200 100 0 0.25 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 A 300 A 0.50 0.75 1.00 1.25 1.50 1.75 2.00 93363_04 20 40 60 80 100 120 140 160 93363_02 VCE (V) Fig. 2 - Typical Output Characteristics, TJ = 125 °C TJ (°C) Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Document Number: 93363 Revision: 31-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A 800 700 600 VCE = 20 V TJ = 125 °C 1 10 400 300 200 100 0 3 4 TJ = 125 °C TJ = 25 °C ICES (mA) 500 IC (A) 0.1 TJ = 25 °C 0.01 5 6 7 8 9 0.001 100 93363_08 200 300 400 500 600 93363_05 VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics VCES (V) Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 5.0 TJ = 25 °C 4.5 4.0 600 500 400 TJ = 125 °C Vgeth (V) IF (A) TJ = 125 °C 3.5 3.0 2.5 2.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 300 200 100 TJ = 25 °C 0 0 0.5 1.0 1.5 2.0 2.5 93363_06 IC (mA) Fig. 6 - Typical IGBT Gate Threshold Voltage 93363_09 VFM (V) Fig. 9 - Typical Diode Forward Characteristics Allowable Case Temperature (°C) 10 000 160 140 120 100 80 60 40 20 0 DC 1000 IC (A) 100 10 1 1 93363_07 10 100 1000 93363_10 0 40 80 120 160 200 240 VCE (V) Fig. 7 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V, Rg = 22  IF - Continuous Forward Current (A) Fig. 10 - Maximum DC Forward Current vs. Case Temperature www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93363 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A 175 150 125 10 000 Switching Time (ns) Energy (mJ) 100 Eoff 75 50 25 0 0 100 200 300 400 tf 1000 td(on) tr td(off) Eon 100 0 93363_14 5 10 15 20 25 93363_11 IC (A) Fig. 11 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Rg (Ω) Fig. 14 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 400 A, VCC = 360 V, VGE = 15 V, L = 500 μH 10 000 300 280 Switching Time (ns) tf 1000 td(off) td(on) tr 100 260 240 TJ = 125 °C trr (ns) 220 200 180 160 140 120 TJ = 25 °C 10 0 93363_12 100 200 300 400 100 100 200 300 400 500 600 700 800 900 1000 93363_15 IC (A) Fig. 12 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH dIF/dt (A/μs) Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt, VCC = 400 V, IF = 300 A 175 150 125 Eoff 130 120 110 100 90 80 70 60 50 Eon 40 30 20 10 100 200 300 400 500 600 700 800 900 1000 93363_16 Energy (mJ) 75 50 25 0 0 5 10 15 20 25 Irr (A) 100 TJ = 125 °C TJ = 25 °C 93363_13 Rg (Ω) Fig. 13 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 400 A, VCC = 360 V, VGE = 15 V, L = 500 μH dIF/dt (A/µs) Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt, VCC = 400 V, IF = 300 A Document Number: 93363 Revision: 31-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 400 A 22 20 18 16 Qrr (μC) 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 TJ = 25 °C TJ = 125 °C 93363_17 dIF/dt (A/μs) Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt, VCC = 400 V, IF = 300 A 1 ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 0.01 0.001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.00001 93363_18 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) 1 ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93363_19 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93363 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA400TD60S Dual INT-A-PAK Low Profile "Half-Bridge" Vishay Semiconductors (Standard Speed IGBT), 400 A ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 - A 2 400 3 T 4 D 5 60 6 S 7 Insulated Gate Bipolar Transistor (IGBT) A = Generation 4 IGBT Current rating (400 = 400 A) Circuit configuration (T = Half-bridge) Package indicator (D = Dual INT-A-PAK Low Profile) Voltage rating (60 = 600 V) Speed/type (S = Standard Speed IGBT) CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95435 Document Number: 93363 Revision: 31-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 This document is subject to change without notice. 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