GB75DA120UP

GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES IC DC VCE(on) typical at 75 A, 25 °C 1200 V 75 A at 95 °C 3.3 V BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC ICM ILM IF VGE PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 131 89 200 A 200 59 39 ± 20 658 369 W 240 135 2500 V V UNITS V Power dissipation, diode Isolation voltage PD VISOL Document Number: 93011 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES TEST CONDITIONS VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 125 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150 °C IC = 75 A, VGE = 0 V IC = 75 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 1200 4 TYP. 3.3 3.6 5 - 12 3 4 3.4 3.3 MAX. 3.8 3.9 6 250 20 5.0 V 5.2 ± 200 nA mV/°C μA mA V UNITS Forward voltage drop Gate to emitter leakage current VFM IGES SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge SYMBOL Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf TJ = 150 °C, IC = 200 A, Rg = 22  RBSOA trr Irr Qrr trr Irr Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH 142 13 923 202 18 1818 210 16 1680 260 22 2860 ns A nC ns A nC Fullsquare IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C IC = 50 A, VCC = 600 V, VGE = 15 V TEST CONDITIONS MIN. Energy losses include tail and diode recovery (see fig. 18) TYP. 690 65 250 1.53 1.76 3.29 2.49 3.45 5.94 281 45 300 126 MAX. mJ ns nC UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93011 Revision: 22-Jul-10 GB75DA120UP Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range IGBT Junction to case Diode Case to sink per module Mounting torque, 6-32 or M3 screw Weight RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.05 30 MAX. 150 0.19 0.52 1.3 Nm g °C/W UNITS °C Vishay Semiconductors Allowable Case Temperature (°C) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 200 150 TJ = 25 °C IC (A) 100 TJ = 125 °C 50 0 0 1 2 3 4 5 6 IC - Continuous Collector Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 1000 VCE (V) Fig. 3 - Typical IGBT Collector Current Characteristics Allowable Case Temperature (°C) 160 140 120 100 80 60 40 20 0 100 IC (A) 10 1 10 100 1000 10 000 0 10 20 30 40 50 60 70 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V IF - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93011 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GB75DA120UP Vishay Semiconductors 200 Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A 4.5 4.0 150 100 A 75 A 100 VCE (V) TJ = 125 °C 3.5 IF (A) 3.0 50 2.5 TJ = 25 °C 0 0 1 2 3 4 5 2.0 25 50 75 27 A 100 125 150 VFM (V) Fig. 5 - Typical Diode Forward Characteristics TJ (°C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 4.0 10 TJ = 125 °C 3.5 3.0 1 Energy (mJ) ICES (mA) 0.1 2.5 Eoff 2.0 1.5 Eon 1.0 0.5 0.01 TJ = 25 °C 0.001 0.0001 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 70 80 VCES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current IC (A) Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 1000 6.0 5.5 5.0 Switching Time (µs) TJ = 25 °C td(off) td(on) tf 100 tr Vgeth (V) 4.5 TJ = 125 °C 4.0 3.5 3.0 0.0002 10 0.0004 0.0006 0.0008 0.001 0 20 40 60 80 IC (mA) Fig. 7 - Typical IGBT Threshold Voltage IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93011 Revision: 22-Jul-10 GB75DA120UP Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A 14 12 Eon 10 250 230 210 190 TJ = 125 °C Vishay Semiconductors Energy (mJ) trr (ns) 8 Eoff 6 4 2 0 0 10 20 30 40 50 170 150 130 110 90 70 100 1000 TJ = 25 °C RG (Ω) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V 10 000 40 35 dIF/dt (A/µs) Fig. 13 - Typical trr diode vs. dIF/dt VRR = 200 V, IF = 50 A Switching Time (µs) 1000 td(on) td(off) 30 25 TJ = 125 °C Irr (A) 20 15 TJ = 25 °C tf 100 tr 10 5 10 0 10 20 30 40 50 0 100 1000 RG (Ω) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 1 dIF/dt (A/µs) Fig. 14 - Typical Irr diode vs. dIF/dt VRR = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 0.01 0.001 Single pulse (thermal response) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (t1) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Document Number: 93011 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GB75DA120UP Vishay Semiconductors 1 Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 0.01 Rectangular Pulse Duration (t1) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (diode) R= L VC * 50 V 1000 V 1 2 VCC D.U.T. ICM D.U.T. Rg + -V CC * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L -+ -5V D.U.T./ driver Rg + VCC Fig. 18a - Switching Loss Test Circuit www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93011 Revision: 22-Jul-10 GB75DA120UP Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A Vishay Semiconductors 1 2 90 % 3 VC 90 % 10 % td(off) 10 % IC 5% tr td(on) Eon Ets = (Eon + Eoff) Eoff tf t = 5 µs Fig. 18b - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 8 - B 2 75 3 D 4 A 5 120 6 U 7 P 8 Insulated Gate Bipolar Transistor (IGBT) B = IGBT Generation 5 Current rating (75 = 75 A) Circuit configuration (D = Single switch with antiparallel diode) Package indicator (A = SOT-227) Voltage rating (120 = 1200 V) Speed/type (U = Ultrafast IGBT) Totally lead (Pb)-free Document Number: 93011 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 GB75DA120UP Vishay Semiconductors CIRCUIT CONFIGURATION 3 (C) Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93011 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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