GBPC35

GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier GBPC-W GBPC FEATURES • UL recognition file number E54214 • Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting • Typical IR less than 0.3 μA • High surge current capability • Low thermal resistance • Solder dip 260 °C, 40 s • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ~ ~ ~ ~ ~ TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. 12 A, 15 A, 25 A, 35 A 50 V to 1000 V 200 A, 300 A, 300 A, 400 A 5 μA 1.1 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-0 flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads, solderable per J-STD-002 and JESD22-B102. E4 suffix for consumer grade. Suffix letter “W” added to indicate wire leads (e.g. GBPC12005W). Polarity: As marked, positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage GBPC12 Maximum average forward rectified output current (Fig. 1) GBPC15 GBPC25 GBPC35 GBPC12 Peak forward surge current single sine-wave superimposed on rated load GBPC15 GBPC25 GBPC35 GBPC12 Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing GBPC15 GBPC25 GBPC35 RMS isolation voltage from case to leads Operating junction storage temperature range VISO TJ, TSTG I2t IFSM IF (AV) SYMBOL VRRM VRMS VDC GBPC12, 15, 25, 35 005 50 35 50 01 100 70 100 02 200 140 200 04 400 280 400 12 15 25 35 200 300 300 400 160 375 375 660 2500 - 55 to + 150 V °C A2s A A 06 600 420 600 08 800 560 800 10 1000 700 1000 UNIT V V V Document Number: 88612 Revision: 28-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER GBPC12 Maximum instantaneous forward drop per diode GBPC15 GBPC25 GBPC35 Maximum reverse DC current at rated DC blocking voltage per diode Typical junction capacitance per diode TEST CONDITIONS IF = 6.0 A IF = 7.5 A IF = 12.5 A IF = 17.5 A TA = 25 °C TA = 125 °C 4 V, 1 MHz 5.0 IR CJ μA 500 300 pF VF 1.1 V GBPC12, 15, 25, 35 SYMBOL 005 01 02 04 06 08 10 UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) GBPC12, 15, 25, 35 PARAMETER GBPC12 to GBPC25 Typical thermal resistance GBPC35 SYMBOL 005 RJC (1) 01 02 04 1.9 °C/W 1.4 06 08 10 UNIT Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw ORDERING INFORMATION (Example) PREFERRED P/N GBPC1206-E4/51 GBPC1506-E4/51 GBPC2506-E4/51 GBPC3506-E4/51 GBPC1206W-E4/51 GBPC1506W-E4/51 GBPC2506W-E4/51 GBPC3506W-E4/51 UNIT WEIGHT (g) 15.79 15.79 15.79 15.79 13.8 13.8 13.8 13.8 PREFERRED PACKAGE CODE 51 51 51 51 51 51 51 51 BASE QUANTITY 100 100 100 100 100 100 100 100 DELIVERY MODE Paper box Paper box Paper box Paper box Paper box Paper box Paper box Paper box www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88612 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 60 Hz Resistive or Inductive Load 6 x 2.2 x 2.2" AL, Finned Plate 1000 Peak Forward Surge Current (A) Average Forward Current (A) Bridges Mounted on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) AL, Finned Plate 5 x 6 x 4.9" AL, Finned Plate 5 x 4 x 3" AL, Finned Plate TJ = TJ Max. 0.5 ms Single Sine-Wave GBPC35 100 GBPC12 GBPC15 GBPC25 1.0 Cycle 10 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Output Rectified Current Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 40 35 100 Instantaneous Forward Current (A) GBPC35 RthSA = 0.5 °C/W Average Forward Current (A) 60 Hz Resistive or Inductive Load TA = 150 °C TA = 125 °C 10 30 25 20 15 10 5 0 0 GBPC25 RthSA = 0.5 °C/W GBPC15 RthSA = 1.0 °C/W TA = 100 °C TA = 25 °C 1 GBPC12 RthSA = 1.0 °C/W 10 20 30 40 50 60 70 80 90 100 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Maximum Output Rectified Current Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode Average Power Dissipation of Bridge (W) 80 70 60 50 40 30 20 10 0 0 10 20 30 40 Resistive or Inductive Load TJ = TJ Max. Capacitive Load 1000 Instantaneous Reverse Leakage Current (µA) TA = 150 °C TA = 125 °C TA = 100 °C 10 100 1 TA = 25 °C 0.1 0 10 20 30 40 50 60 70 80 90 100 Average Output Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Power Dissipation Fig. 6 - Typical Reverse Leakage Characteristics Per Diode Document Number: 88612 Revision: 28-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 100 10 10 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 0.24 (6.0) 0.18 (4.6) Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) GBPC 1.135 (28.8) 1.115 (28.3) 0.672 (17.1) 0.632 (16.1) AC 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) DIA. 0.25 (6.35) 0.582 (14.8) 0.542 (13.8) 0.24 (6.0) 0.18 (4.6) 0.042 (1.07) 0.038 (0.97) DIA. 0.470 (11.9) 0.430 (10.9) 0.50 (12.7) 0.44 (11.7) 1.25 (31.8) MIN. 0.034 (0.86) 0.030 (0.76) 0.310 (7.87) 0.290 (7.36) 0.310 (7.62) 0.290 (7.36) 0.840 (21.3) 0.740 (18.8) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88612 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Mar-11 This document is subject to change without notice. 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