GCDA15C-1-GS08

GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diodes Features • • • • Low capacitance Very low leakage current Bidirectional ESD protection ESD protection to IEC 61000 - 4 - 2 Level 4 2 1 3 4 18909 Mechanical Data Case: SOT-143 Plastic case Weight: approx. 8 mg Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Packaging: TBD Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part GCDA15C-1 Ordering code GCDA15C-1-GS08 GC1 Marking Remarks Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Maximum Peak pulse current Peak pulse power ESD Air discharge per IEC 61000-4-2 ESD Contact discharge per IEC 61000-4-2 Test condition 8/20 µs waveform 8/20 µs waveform Symbol IPPM PPPM VPP VPP Value 10 350 15 8 Unit A W kV kV Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operation temperature Storage temperature Test condition Symbol TJ TSTG Value - 40 to + 125 - 55 to + 150 Unit °C °C Document Number 85856 Rev. 1.1, 19-Oct-04 www.vishay.com 1 GCDA15C-1 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Capacitance Clamping voltage IR = 1 m A VRW = 15 V VR = 0 V, f = 1 MHz IPP = 1 A, 8/20 µs waveform (Fig. 4) IPP = 8 A, 8/20 µs waveform (Fig. 4) Test condition Symbol VRWM VBR IR CD VC VC 5 21 30 16 100 Min Typ. Max 15 Unit V V nA pF V V Typical Characteristics (Tamb = 25 °C unless otherwise specified) 7 CD - Diode Capacitance ( pF ) 40 f = 1 MHz VC - Typical Clamping Voltage ( V ) 6 5 4 3 2 1 0 0 5 10 15 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 18910 VR - Reverse V oltage (V) 18912 I PP - Peak Pulse Current ( A ) Figure 1. Typical Capacitance vs. Reverse Voltage Figure 3. Typical Clamping Voltage vs. Peak Pulse Current 22 20 V R - Reverse Voltage ( V ) Pulse Current Level ( % ) 150 125 100 75 50 25 0 0.1 1 10 100 IR - Reverse Current ( µA ) 1000 18913 18 16 14 12 10 8 6 4 2 0 0.01 rise time = 8 µs 100 % = IPP 50 % derating time = 20 µs 0 5 10 15 20 25 30 35 18911 Time (µs ) Figure 2. Typical Reverse Voltage vs. Reverse Current Figure 4. Pulse Waveform 8/20 µs acc. IEC 61000 - 4 - 5 www.vishay.com 2 Document Number 85856 Rev. 1.1, 19-Oct-04 GCDA15C-1 Vishay Semiconductors Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 1.1 (0.043) 0.9 (0.035) 0.9 (0.035) 0.75 (0.029) 0.15 (0.006) 0.08 (0.003) 1.4 (0.055) 1.2 (0.047) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) ISO Method E 2.0 (0.078) 1.8 (0.070) 96 12240 Document Number 85856 Rev. 1.1, 19-Oct-04 2.6 (0.101) 2.4 (0.094) www.vishay.com 3 GCDA15C-1 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85856 Rev. 1.1, 19-Oct-04