GI1002

VISHAY GI1001 to GI1004 Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability • Hermetically sealed package • High surge capability 17031 Mechanical Data Case: Sintered glass case, DO-204AP Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 560 mg Parts Table Part GI1001 GI1002 GI1003 GI1004 VRRM = 50 V VRRM = 100 V VRRM = 150 V VRRM = 200 V Type differentiation DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Operating junction and storage temperature range 0.375 " (9.5 mm) lead length at TL = 75 °C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method), at TL = 75 °C Part GI1001 GI1002 GI1003 GI1004 Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM TJ, TSTG Value 50 100 150 200 1.0 30 - 55 to + 175 Unit V V V V A A °C Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 1 GI1001 to GI1004 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Typical thermal resistance junction to ambient 1), 2) VISHAY Symbol RθJA RθJL Value 65 20 Unit K/W K/W Typical thermal resistance 1), 2) junction to lead Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Maximum instantaneous forward voltage 1) Maximum reverse current Maximum reverse recovery time Typical junction capacitance 1) Test condition IF = 1.0 A VR/> = VRRM, Tamb = 25 °C VR/> = VRRM, Tamb = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A VR = 4 V, f = 1 MHz Symbol VF IR IR trr CJ Typ. Max 0.975 2.0 50 25 Unit V µA µA ns pF 45 Pulse test: 300 µs pulse width, 1 % duty cycle Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.5 30 Average Forward Rectified Current (A) Peak Forward Surge Current (A) 0.8 x 0.8 x 0.4" Thick Copper Heatsink (20 x 20 x 10mm) TL 8.3ms Single Half Sine-Wave (JEDEC Method) at TL = 75°C 25 20 1.0 0.375" (9.5mm) 15 0.5 10 5.0 Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 0 1 10 100 ggi1001_01 Lead Temperature (°C) ggi1001_02 Number of Cycles at 60 HZ Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 86073 Rev. 2, 28-Jan-03 VISHAY GI1001 to GI1004 Vishay Semiconductors 50 Instantaneous Forward Current (A) 10 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 0.1 0.01 0.4 ggi1001_03 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 1,000 Instantaneous Reverse Leakage Current (µA) 100 TJ = 125°C TJ = 100°C 1 10 0.1 TJ = 25°C 0.01 0 ggi1001_04 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics 105 90 Junction Capacitance (pF) TJ = 25°C f = 1.0MHZ Vsig = 50MVp-p 75 60 45 30 15 0 0.1 1 10 100 ggi1001_05 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 3 GI1001 to GI1004 Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4) MIN. 17030 www.vishay.com 4 Document Number 86073 Rev. 2, 28-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to GI1001 to GI1004 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86073 Rev. 2, 28-Jan-03 www.vishay.com 5