GI758

GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC P600 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. 6.0 A 50 V to 800 V 400 A 0.9 V, 0.95 V 5.0 μA 150 °C For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: P600, void-free molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum non-repetitive peak reverse voltage Maximum average forward rectified current at TA = 60 °C, P.C.B. mounting (fig. 1) TL = 60 °C,0.125" (3.18 mm) lead length (fig. 2) IF(AV) SYMBOL VRRM VRMS VDC VRSM GI750 50 35 50 60 GI751 100 70 100 120 GI752 200 140 200 240 6.0 22 400 - 50 to + 150 A GI754 400 280 400 480 GI756 600 420 600 720 GI758 800 560 800 1200 UNIT V V V V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range IFSM TJ, TSTG A °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage at Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance Document Number: 88627 Revision: 28-Oct-09 TEST CONDITIONS 6.0 A 100 A TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF IR trr CJ GI750 GI751 GI752 0.90 1.25 5.0 1.0 2.5 150 GI754 GI756 GI758 0.95 1.30 UNIT V μA mA μs pF www.vishay.com 1 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com GI750 thru GI758 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) RθJL (1) GI750 GI751 GI752 20 GI754 GI756 GI758 UNIT °C/W 4.0 Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted with 1.1" x 1.1" (30 mm x 30 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N GI756-E3/54 GI756-E3/73 UNIT WEIGHT (g) 2.1 2.1 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 800 300 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8.0 1000 Average Forward Rectified Current (A) Peak Forward Surge Current (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 1.1" x 1.1" (30 mm x 30 mm) Copper Pads 60 Hz Resistive or Inductive Load TJ = 25 °C Non-Repetitive TJ = 150 °C 100 TJ = 25 °C Repetitive VRRM may be Applied Between Each Cycle of Surge, the TJ Noted is TJ Prior to Surge TJ = 150 °C 10 100 120 140 160 180 200 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Maximum Peak Forward Surge Current 28 L = 0. Instantaneous Forward Current (A) Average Forward Current (A) 24 60 Hz Resistive or Inductive Load "( 100 Pulse Width = 300 μs 1 % Duty Cycle 10 TJ = 25 °C 1 5 12 L= 20 16 12 8 4 0 0 20 L= 0.2 1 3. 5" (6. 8 35 m m ) mm 0.3 ) 75 " (9 .5 Both Leads Attached to Heat Sinks with Length as Shown “L” L= mm 0.6 ) 25" (15 .8 m m) 0.1 40 60 80 100 120 140 160 180 200 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88627 Revision: 28-Oct-09 GI750 thru GI758 Vishay General Semiconductor 100 100 10 TJ = 125 °C TJ = 100 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) Mounted on 0.20" x 0.27" (5.0 mm x 7.0 mm) Copper Pad Areas 10 1 TJ = 25 °C 0.1 1 0.01 0 20 40 60 80 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 5 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Document Number: 88627 Revision: 28-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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