GI822

GI820 thru GI828 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward current operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC P600 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF IR TJ max. 5.0 A 50 V to 800 V 300 A 200 ns 1.05 V 10 μA 150 °C For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: P600, void-free molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum non-repetitive peak reverse voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL VRRM VRMS VDC VRSM IF(AV) IFSM TJ, TSTG GI820 50 35 50 75 GI821 100 70 100 150 GI822 200 140 200 250 5.0 300 - 50 to + 150 GI824 400 280 400 450 GI826 600 420 600 650 GI828 800 560 800 880 UNIT V V V V A A °C Document Number: 88629 Revision: 26-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GI820 thru GI828 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance Maximum reverse recovery time Maximum reverse recovery current 4.0 V, 1 MHz IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs TEST CONDITIONS 5.0 A 15.7 A TJ = 25 °C VF TJ = 100 °C TA = 25 °C IR TA = 100 °C CJ trr IRM(REC) 1.0 300 200 2.0 pF ns A 1.05 10 μA SYMBOL GI820 GI821 GI822 GI824 GI826 GI828 UNIT V 1.10 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) GI820 GI821 GI822 10 GI824 GI826 GI828 UNIT °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length with both leads equally heat sink ORDERING INFORMATION (Example) PREFERRED P/N GI826-E3/54 GI826-E3/73 UNIT WEIGHT (g) 2.1 2.1 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 800 300 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Capacitive Loads 5.0 Ipk = 10 IAV 20 Ipk =π IAV 1.1" x 1.1" (30 mm x 30 mm) Copper Pads 20 Resistive or Inductive Load L = Lead Length Average Forward Current (A) Average Forward Current (A) 16 L= 0.1 2" (3. 2m 12 L= m) 0.2 L= 8 5" ( 6.3 0.37 mm 1.6" x 1.6" x 0.04" (40 mm x 40 mm x 1 mm) Copper Heatsinks L = 0.6 5" (9 . ) 5m 2" (15 .9 m) mm) 4 0 20 40 60 80 100 120 140 160 180 0 75 80 85 90 95 100 105 110 115 120 125 Ambient Temperature (°C) Lead Temperature (°C) Fig. 1 - Forward Current Derating Curves Fig. 2 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88629 Revision: 26-Oct-09 GI820 thru GI828 Vishay General Semiconductor 400 10 350 Instantaneous Reverse Current (μA) Peak Forward Surge Current (A) 8.3 ms Single Half Sine-Wave TJ = 100 °C 300 TA = 25 °C 1 250 TJ = 50 °C 0.1 200 TJ = 125 °C TJ = 25 °C 150 100 1 10 100 0.01 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Reverse Characteristics 100 25 L = Lead Length Instantaneous Forward Current (A) RθJL Thermal Resistance from Junction to Lead (°C/W) 1.8 2.0 20 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 15 10 1 5 0.1 0.6 0 0.8 1.0 1.2 1.4 1.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Equal Lead Lengths to Heatsink (inches) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Thermal Resistance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) P600 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Document Number: 88629 Revision: 26-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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