GI911

GI910 thru GI917 Vishay General Semiconductor Medium Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-201AD TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr IR VF TJ max. 3.0 A 50 V to 800 V 100 A 750 ns 10 μA 1.25 V 150 °C For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: DO-201AD, molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 90 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG GI910 50 35 50 GI911 100 70 100 GI912 200 140 200 3.0 100 - 50 to + 150 GI914 400 280 400 GI916 600 420 600 GI917 800 560 800 UNIT V V V A A °C Document Number: 88631 Revision: 10-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GI910 thru GI917 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Maximum reverse recovery current Typical junction capacitance TEST CONDITIONS 3.0 A 9.4 A TA = 25 °C TJ = 175 °C TA = 25 °C TA = 100 °C IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM 4.0 V, 1 MHz SYMBOL VF GI910 GI911 GI912 GI914 GI916 GI917 UNIT V 1.10 10 IR μA 300 750 ns 1.25 trr IRM(REC) CJ 2.0 28 A pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA RθJL (1) (1) GI910 GI911 GI912 22 GI914 GI916 GI917 UNIT °C/W 8.0 Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink ORDERING INFORMATION (Example) PREFERRED P/N GI916-E3/54 GI916-E3/73 UNIT WEIGHT (g) 1.1 1.1 PREFERRED PACKAGE CODE 54 73 BASE QUANTITY 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 Average Forward Rectified Current (A) 3.0 0.8" x 0.8" x 0.04" (20 mm x 20 mm x 1 mm) Copper Heatsinks 2.0 Capacitive Loads 5.0 Ipk = 10 IAV 20 Peak Forward Surge Current (A) Ipk =π IAV 0.375" (9.5 mm) Lead Length 1000 8.3 ms Single Half Sine-Wave TJ = 25 °C 100 Non-Repetitive 1.0 Repetitive TJ = 150 °C 0 30 50 70 90 110 130 150 170 10 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curves Fig. 2 - Maximum Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88631 Revision: 10-Nov-09 GI910 thru GI917 Vishay General Semiconductor 100 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.01 0.4 Junction Capacitance (pF) 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 Instantaneous Reverse Current (μA) TJ = 100 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88631 Revision: 10-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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