GMF05C

GMF05C Vishay Semiconductors ESD Protection Diode Array 6 5 4 Features • Transient protection for data lines as per IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics • Bidirectional protection of 4 I/O lines • Unidirectional protection of 5 I/O lines • Low leakage current • Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras CW VY G M 1 18538-2 1 1 2 3 VY - V = Vishay Y = year, is variable for digit from 0 to 9 (e.g. 4 = 2004, 5 = 2005) CW = Calendar Week, is variable for number from 01 to 52 GM1 = code for GMF05C Mechanical Data Case: SOT-363 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 6.0 mg Parts Table Part GMF05C Ordering code GMF05C-GS08 GM1 Marking Remarks Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak pulse power Peak pulse current Test condition 8/20 µs waveform 8/20 µs waveform Symbol Pppm Ipp Value 200 12 Unit W A Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operating temperature Storage temperature Test condition Symbol Tj TSTG Value - 55 to + 125 - 55 to + 150 Unit °C °C Document Number 85833 Rev. 1.1, 02-Mar-05 www.vishay.com 1 GMF05C Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Peak forward voltage It = 1 m A VRWM = 5 V IPP = 1 A, 8/20 µs waveform IPP = 12 A, 8/20 µs waveform IF = 1 A, 8/20 µs waveform Junction capacitance between I/ VR = 0 V, f = 1 MHz O pins and Gnd Test condition Symbol VRWM VBR IR VC VC VF Cj 1.5 150 6 1 9.5 12.5 Min Typ. Max 5 VISHAY Unit V V µA V V V pF Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 110 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 1 0.1 td = IPP 2 0.01 0.1 ggmf05c-hs3_01 1.0 10 100 1000 20 25 30 td - Pulse Duration (µs) ggmf05c-hs3_03 t - Time ( µs) Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 20 18 VC - Clamping Voltage (V) 0 25 50 75 100 125 150 175 16 14 12 10 8 6 4 2 75 50 25 0 0 ggmf05c-hs3_02 TA - Ambient Temperature (°C) 0 2 4 6 8 10 12 14 ggmf05c-hs3_04 IPP - Peak Pulse Current (A) Figure 2. Pulse Derating Curve Figure 4. Clamping Voltage vs. Peak Pulse Current www.vishay.com 2 Document Number 85833 Rev. 1.1, 02-Mar-05 VISHAY Package Dimensions in mm (Inches) GMF05C Vishay Semiconductors 0.10 (0.004) 1.00 (0.039) 0.80 (0.031) 10 2.20 (0.087) 1.80 (0.071) 0.25 (0.010) 0.10 (0.004) ISO Method E Mounting Pad Layout 0.35 (0.014) 1.15 (0.045) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.60 (0.063) 0.30 (0.012) 0.20 (0.009) 0.65 (0.026) 1.3 (0.052) 0.65 (0.026) Ref. 0.90 (0.035) 1.30 (0.052) Ref. 14280 Document Number 85833 Rev. 1.1, 02-Mar-05 www.vishay.com 3 GMF05C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85833 Rev. 1.1, 02-Mar-05