GMF05MC

GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 Features • Transient protection for data lines as per IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 µs) • Small package for use in portable electronics • Bidirectional protection of 4 I/O lines • Unidirectional protection of 5 I/O lines • Low leakage current • Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras CW VY G M 3 18538-4 1 1 2 3 VY - V = Vishay Y = year, is variable for digit from 0 to 9 (e.g. 4 = 2004, 5 = 2005) CW = Calendar Week, is variable for number from 01 to 52 GM3 = code for GMF05MC Mechanical Data Case: SOT-363 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 6.0 mg Parts Table Part GMF05MC Ordering code GMF05MC-GS08 GM3 Marking Remarks Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak pulse power Peak pulse current Test condition 8/20 µs waveform 8/20 µs waveform Symbol Pppm Ipp Value 100 7 Unit W A Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operating temperature Storage temperature Test condition Symbol Tj TSTG Value - 55 to + 125 - 55 to + 150 Unit °C °C Document Number 85855 Rev. 1.1, 02-Mar-05 www.vishay.com 1 GMF05MC Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Peak forward voltage It = 1 m A VRWM = 5 V IPP = 1 A, 8/20 µs waveform IPP = 7 A, 8/20 µs waveform IF = 1 A, 8/20 µs waveform Junction capacitance between I/ VR = 0 V, f = 1 MHz O pins and Gnd Test condition Symbol VRWM VBR IR VC VC VF Cj 1.5 75 6 0.2 9 12 Min Typ. Max 5 VISHAY Unit V V µA V V V pF Typical Characteristics (Tamb = 25 °C unless otherwise specified) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 - Peak Pulse Power ( kW ) P PPM 100 75 10 50 1 25 0.1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature ( ° C) 0.01 0.1 18668 1 10 100 1000 18687 td - Pulse Duration ( µ A ) Figure 1. Pulse Derating Curve Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time IPPM - Peak Pulse Current, % IRSM 110 CD - Diode Capacitance ( pF ) 100 90 80 70 60 50 40 30 20 10 0 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 100 90 80 70 60 50 40 30 20 10 0 0 18669 f = 1 MHz I t d = PP 2 0 5 10 15 20 25 30 1 2 3 4 5 6 18688 t - Time ( µs) VR - Reverse Voltage ( V ) Figure 2. Pulse Waveform Figure 4. Typical Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 85855 Rev. 1.1, 02-Mar-05 VISHAY GMF05MC Vishay Semiconductors 7 V R - Reverse Voltage ( V ) 14 VC - Typical Clamping Voltage ( V ) 6 5 4 3 2 1 0 0.01 12 10 8 6 4 2 0 0.1 1 10 100 1000 18671 0 1 2 3 4 5 6 7 8 9 10 18670 IR - Reverse Current ( µA ) I PP - Peak Pulse Current ( A ) Figure 5. Typical Reverse Voltage vs. Reverse Current Figure 6. Typical Clamping Voltage vs. Peak Pulse Current Package Dimensions in mm (Inches) 0.10 (0.004) 1.00 (0.039) 0.80 (0.031) 10 2.20 (0.087) 1.80 (0.071) 0.25 (0.010) 0.10 (0.004) ISO Method E Mounting Pad Layout 0.35 (0.014) 1.15 (0.045) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.60 (0.063) 0.30 (0.012) 0.20 (0.009) 0.65 (0.026) 1.3 (0.052) 0.65 (0.026) Ref. 0.90 (0.035) 1.30 (0.052) Ref. 14280 Document Number 85855 Rev. 1.1, 02-Mar-05 www.vishay.com 3 GMF05MC Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85855 Rev. 1.1, 02-Mar-05