GSIB2520N

New Product GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-Iine package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 2500 VRMS ~ ~ ~ ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition Case Style GSIB-5S TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. 25 A 200 V to 800 V 350 A 10 μA 1.0 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. MECHANICAL DATA Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TC = 98 °C TA = 25 °C SYMBOL VRRM VRMS VDC IF(AV) (1) GSIB2520N 200 140 200 GSIB2540N 400 280 400 GSIB2560N 600 420 600 GSIB2580N 800 560 800 UNIT V V V A A A2s °C 25 3.5 350 500 - 55 to + 150 IF(AV) (2) IFSM I 2t TJ, TSTG Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 15-Aug-11 Document Number: 89389 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS IF = 12.5 A TA = 25 °C TA = 125 °C SYMBOL VF IR GSIB2520N GSIB2540N GSIB2560N GSIB2580N 1.0 10 350 UNIT V μA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL RJA (2) RJC (1) GSIB2520N GSIB2540N GSIB2560N GSIB2580N 22 1.0 UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N GSIB2560N-M3/45 UNIT WEIGHT (g) 7.0 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 400 Average Forward Output Current (A) Peak Forward Surge Current (A) Heatsink Mounting, TC 25 350 300 200 150 100 50 0 20 15 10 5 PCB Mounting, TA 1.0 Cycle 0 0 25 50 75 100 125 150 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Aug-11 Document Number: 89389 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor 1000 100 Instantaneous Forward Current (A) 10 Junction Capacitance (pF) 100 1 10 0.1 0.01 0.6 1 0.8 1.0 1.2 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 TA = 125 °C 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 1 1 TA = 25 °C 0.1 0 20 40 60 80 100 0.1 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GSIB-5S 4.6 ± 0.2 3.6 ± 0.2 3.5 ± 0.2 3.2 ± 0.2 2.7 ± 0.2 30 ± 0.3 20 ± 0.3 + 2.5 ± 0.2 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 17.5 ± 0.5 4 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 0.7 ± 0.1 Revision: 15-Aug-11 Document Number: 89389 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 11 ± 0.2 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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