GSOT08-GS08

GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 FEATURES 3 • Single-line ESD-protection device • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 1 2 20421 • Space saving SOT-23 package • AEC-Q101 qualified • e3 - Sn • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20512 1 MARKING (example only) XX XX 20357 YYY YYY = type code (see table below) XX = date code ORDERING INFORMATION DEVICE NAME GSOT03 GSOT04 GSOT05 GSOT08 GSOT12 GSOT15 GSOT24 GSOT36 ENVIRONMENTAL STATUS Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green ORDERING CODE GSOT03-GS08 GSOT03-V-G-08 GSOT04-GS08 GSOT04-V-G-08 GSOT05-GS08 GSOT05-V-G-08 GSOT08-GS08 GSOT08-V-G-08 GSOT12-GS08 GSOT12-V-G-08 GSOT15-GS08 GSOT15-V-G-08 GSOT24-GS08 GSOT24-V-G-08 GSOT36-GS08 GSOT36-V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 3000 3000 3000 3000 3000 3000 3000 3000 MINIMUM ORDER QUANTITY 15 000 15 000 15 000 15 000 15 000 15 000 15 000 15 000 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 1 GSOT03 to GSOT36 Vishay Semiconductors PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE 03 GSOT03 SOT-23 03G 04 GSOT04 SOT-23 04G 05 GSOT05 SOT-23 05G 08 GSOT08 SOT-23 08G 12 GSOT12 SOT-23 12G 15 GSOT15 SOT-23 15G 24 GSOT24 SOT-23 24G 36 GSOT36 SOT-23 36G ENVIRONMENTAL STATUS Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green WEIGHT 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) SOLDERING CONDITIONS Single-Line ESD-Protection in SOT-23 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS GSOT03 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 30 369 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS GSOT04 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 30 429 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C www.vishay.com 2 For technical questions, contact: ESDprotection@vishay.com Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 ABSOLUTE MAXIMUM RATINGS GSOT05 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 30 480 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT08 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 18 345 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS GSOT12 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 12 312 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS GSOT15 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 8 230 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS GSOT24 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Document Number: 85807 Rev. 2.0, 22-Jul-10 TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG For technical questions, contact: ESDprotection@vishay.com VALUE 5 235 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C www.vishay.com 3 GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 ABSOLUTE MAXIMUM RATINGS GSOT36 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 3 to 1 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM PPP VESD TJ TSTG VALUE 3.5 248 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A W kV kV °C °C BiAs-MODE (1-line bidirectional asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and asymmetrical (BiAs). L1 3 1 2 BiAs Ground 20422 ELECTRICAL CHARACTERISTICS GSOT03 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance Note • BiAs mode (between pin 3 and pin 1) TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 100 μA at VR = 3.3 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 3.3 4 TYP. 4.6 5.7 10 1 4.5 420 260 MAX. 1 100 7.5 12.3 1.2 600 UNIT lines V μA V V V V V pF pF www.vishay.com 4 For technical questions, contact: ESDprotection@vishay.com Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT04 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance Note • BiAs mode (between pin 3 and pin 1) TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 20 μA at VR = 4 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 4 5 TYP. 6.1 7.5 11.2 1 4.5 310 200 MAX. 1 20 9 14.3 1.2 450 UNIT lines V μA V V V V V pF pF Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT05 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance Note • BiAs mode (between pin 3 and pin 1) TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 10 μA at VR = 5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 5 6 TYP. 6.8 7 12 1 4.5 260 150 MAX. 1 10 8.7 16 1.2 350 UNIT lines V μA V V V V V pF pF ELECTRICAL CHARACTERISTICS GSOT08 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 5 μA at VR = 8 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC MIN. 8 9 TYP. 10 10.7 15.2 1 3 160 80 MAX. 1 5 13 19.2 1.2 250 UNIT lines V μA V V V V V pF pF Forward clamping voltage VF Capacitance Note • BiAs mode (between pin 3 and pin 1) CD Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 5 GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT12 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 12 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 12 A at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 6 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC MIN. 12 13.5 TYP. 15 15.4 21.2 1 2.2 115 50 MAX. 1 1 18.7 26 1.2 150 UNIT lines V μA V V V V V pF pF Forward clamping voltage VF Capacitance Note • BiAs mode (between pin 3 and pin 1) CD ELECTRICAL CHARACTERISTICS GSOT15 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 15 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 8 A at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 15 16.5 TYP. 18 19.4 24.8 1 1.8 90 35 MAX. 1 1 23.5 28.8 1.2 120 UNIT lines V μA V V V V V pF pF Forward clamping voltage Capacitance Note • BiAs mode (between pin 3 and pin 1) ELECTRICAL CHARACTERISTICS GSOT24 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 24 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 24 27 TYP. 30 34 41 1 1.4 65 20 MAX. 1 1 41 47 1.2 80 UNIT lines V μA V V V V V pF pF Note • BiAs mode (between pin 3 and pin 1) www.vishay.com 6 For technical questions, contact: ESDprotection@vishay.com Document Number: 85807 Rev. 2.0, 22-Jul-10 GSOT03 to GSOT36 Single-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT36 PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 36 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 3.5 A at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 36 39 TYP. 43 49 59 1 1.3 52 12 MAX. 1 1 60 71 1.2 65 UNIT lines V μA V V V V V pF pF Vishay Semiconductors Note • BiAs mode (between pin 3 and pin 1) PACKAGE DIMENSIONS in millimeters (inches): SOT-23 3.1 (0.122) 2.8 (0.110) 0.550 ref. (0.022 ref.) 0.1 (0.004) max. 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.2 (0.008) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.45 (0.018) 1.43 (0.056) 0.35 (0.014) 1.20 (0.047) Foot print recommendation: 2 (0.079) 1 (0.039) 0.9 (0.035) 1 (0.039) 0.9 (0.035) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Document Number: 85807 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 7 0.9 (0.035) 0° t 0.5 (0.020) o8 ° 0.9 (0.035) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1