GSOT08C-V-G-08

GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 FEATURES • Two-line ESD-protection device 2 1 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT-23 package 20456 3 20512 • AEC-Q101 qualified 1 • e3 - Sn • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MARKING (example only) XX XX 20357 YYY YYY = type code (see table below) XX = date code ORDERING INFORMATION DEVICE NAME GSOT03C GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT24C GSOT36C ENVIRONMENTAL STATUS Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green ORDERING CODE GSOT03C-GS08 GSOT03C-V-G-08 GSOT04C-GS08 GSOT04C-V-G-08 GSOT05C-GS08 GSOT05C-V-G-08 GSOT08C-GS08 GSOT08C-V-G-08 GSOT12C-GS08 GSOT12C-V-G-08 GSOT15C-GS08 GSOT15C-V-G-08 GSOT24C-GS08 GSOT24C-V-G-08 GSOT36C-GS08 GSOT36C-V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 3000 3000 3000 3000 3000 3000 3000 3000 MINIMUM ORDER QUANTITY 15 000 15 000 15 000 15 000 15 000 15 000 15 000 15 000 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 1 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 PACKAGE DATA DEVICE NAME GSOT03C GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT24C GSOT36C PACKAGE NAME SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 TYPE CODE 03C C1G 04C C8G 05C C2C 08C C3G 12C C4G 15C C5G 24C C6G 36C C7G ENVIRONMENTAL STATUS Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green WEIGHT 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) MSL level 1 260 °C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS GSOT03C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 30 369 PPP 504 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 30 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT04C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 30 429 PPP 564 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 30 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature www.vishay.com 2 For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT05C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 30 480 PPP 612 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 30 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT08C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 18 345 PPP 400 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 18 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT12C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 12 312 PPP 337 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 12 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 3 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ABSOLUTE MAXIMUM RATINGS GSOT15C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 8 345 PPP 400 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 8 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT24C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 5 235 PPP 240 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 5 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature ABSOLUTE MAXIMUM RATINGS GSOT36C PARAMETER Peak pulse current TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature SYMBOL IPPM 3.5 248 PPP 252 VESD TJ TSTG ± 30 ± 30 - 40 to + 125 - 55 to + 150 W kV kV °C °C A W VALUE 3.5 UNIT A Peak pulse power ESD immunity Operating temperature Storage temperature BiAs-MODE (2-line bidirectional asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and asymmetrical (BiAs). www.vishay.com 4 For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors L1 L2 2 1 3 BiAs 20358 Ground If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in parallel in order to “double” the performance. This offers: • double surge power = double peak pulse current (2 x IPPM) • half of the line inductance = reduced clamping voltage • half of the line resistance = reduced clamping voltage • double line capacitance (2 x CD) • double reverse leakage current (2 x IR) L1 2 1 3 Ground 20359 ELECTRICAL CHARACTERISTICS GSOT03C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 100 μA at VR = 3.3 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 3.3 4 TYP. 4.6 5.7 10 1 4.5 420 260 MAX. 2 100 7.5 12.3 1.2 600 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT04C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 20 μA at VR = 4 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 4 5 TYP. 6.1 7.5 11.2 1 4.5 310 200 MAX. 2 20 9 14.3 1.2 450 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 5 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT05C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 10 μA at VR = 5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 5 6 TYP. 6.8 7 12 1 4.5 260 150 MAX. 2 10 8.7 16 1.2 350 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT08C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 5 μA at VR = 8 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 8 9 TYP. 10 10.7 15.2 1 3 160 80 MAX. 2 5 13 19.2 1.2 250 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT12C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 12 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 12 A at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 6 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 12 13.5 TYP. 15 15.4 21.2 1 2.2 115 50 MAX. 2 1 18.7 26 1.2 150 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) www.vishay.com 6 For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 15 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 8 A at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 15 16.5 TYP. 18 19.4 24.8 1 1.8 90 35 MAX. 2 1 23.5 28.8 1.2 120 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 24 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 24 27 TYP. 30 34 41 1 1.4 65 20 MAX. 2 1 41 47 1.2 80 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT36C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 36 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 3.5 A at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC VF CD MIN. 36 39 TYP. 43 49 59 1 1.3 52 12 MAX. 2 1 60 71 1.2 65 UNIT lines V μA V V V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) BiSy-MODE (1-line bidirectional symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional and symmetrical (BiSy). Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 7 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 L1 1 3 BiSy 20361 Ground ELECTRICAL CHARACTERISTICS GSOT03C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 100 μA at VR = 3.8 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 3.8 4.5 TYP. 5.3 7 14 210 190 MAX. 1 100 8.4 16.8 300 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT04C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 20 μA at VR = 4:5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 4.5 5.5 TYP. 6.8 7.5 15.7 155 135 MAX. 1 20 9 18.8 225 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT05C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 10 μA at VR = 5.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 5.5 6.5 TYP. 7.5 8.1 17 130 100 MAX. 1 10 9.7 20.4 175 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) 2 www.vishay.com 8 For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT08C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 5 μA at VR = 8.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 8.5 9.5 TYP. 10.7 11.7 18.5 80 60 MAX. 1 5 14 22.2 125 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT12C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 12.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 12.5 13.5 TYP. 15.7 16.4 23.4 58 36 MAX. 1 1 19.7 28.1 75 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 15.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 15.5 17 TYP. 18.7 20.4 26.6 45 25 MAX. 1 1 24.5 30.6 60 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 24.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 24.5 27.5 TYP. 30.7 34 40 33 18 MAX. 1 1 41 48 40 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: ESDprotection@vishay.com www.vishay.com 9 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT36C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS Number of lines which can be protected at IR = 1 μA at VR = 36.5 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz SYMBOL Nchannel VRWM IR VBR VC CD MIN. 36.5 39.5 TYP. 43.7 50 60 26 10 MAX. 1 1 60 72 33 UNIT lines V μA V V V pF pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.9 (0.035) 0.9 (0.035) o8 ° 0.1 (0.004) max. 3.1 (0.122) 2.8 (0.110) 0.550 ref. (0.022 ref.) 0.175 (0.007) 0.098 (0.004) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.45 (0.018) 1.43 (0.056) 0.35 (0.014) 1.20 (0.047) Foot print recommendation: 1 (0.039) 0.9 (0.035) 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 2 (0.079) 0.95 (0.037) www.vishay.com 10 For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 Rev. 2.0, 22-Jul-10 0° t 0.5 (0.020) 0.2 (0.008) SOT-23 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) SOT-23 1.15 (0.045) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.1 (0.004) max. 0.175 (0.007) 0.098 (0.004) 0.2 (0.008) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.45 (0.018) 1.43 (0.056) 0.35 (0.014) 1.20 (0.047) Foot print recommendation: 2 (0.079) 1 (0.039) 0.9 (0.035) 1 (0.039) 0.9 (0.035) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Document Number: 84004 Rev. 1.3, 01-Jul-10 For technical questions within your region, please contact one of the following: Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 28 0.9 (0.035) 0° t o 0.5 (0.020) 8° 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.550 ref. (0.022 ref.) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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