GT100DA120U

GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 1200 V 100 A at 119 °C 1.73 V PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Speed 4 kHz to 30 kHz • Very low VCE(on) • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Peak diode forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC (1) ICM ILM IF IFSM VGE PD PD VISOL TC = 25 °C TC = 119 °C TC = 25 °C TC = 119 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 258 174 450 450 50 34 180 ± 20 893 221 176 44 2500 V W V A UNITS V Power dissipation, diode Isolation voltage Note (1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES TEST CONDITIONS VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 100 A VGE = 15 V, IC = 100 A, TJ = 125 °C VCE = VGE, IC = 7.5 mA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 125 °C IF = 40 A, VGE = 0 V IF = 40 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 1200 4.9 TYP. 1.73 1.98 5.9 - 17.6 0.6 0.6 2.81 3.07 MAX. 2.1 V 2.2 7.9 100 10 3.3 V 3.4 ± 200 nA mV/°C μA mA UNITS Forward voltage drop Gate to emitter leakage current VFM IGES SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge Short circuit safe operating area SYMBOL Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA trr Irr Qrr trr Irr Qrr SCSOA TJ = 150 °C, Rg = 22 , VGE = 15 V to 0 V, VCC = 900 V, Vp = 1200 V IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V TJ = 150 °C, IC = 450 A, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C TEST CONDITIONS IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C Energy losses include tail and diode recovery (see fig. 20) MIN. TYP. 5.2 7.1 12.3 6.1 9.8 15.9 350 75 374 493 Fullsquare 164 12 994 230 16.5 1864 10 194 15 1455 273 20 2730 ns A nC ns A nC μs MAX. mJ ns UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range IGBT Junction to case Diode Case to sink per module Mounting torque, 6-32 or M3 screw Weight RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.1 30 MAX. 150 0.14 0.71 1.3 Nm g °C/W UNITS °C Vishay Semiconductors Allowable Case Temperature (°C) 160 140 IGBT DC 120 100 300 275 250 225 200 175 150 125 100 75 50 25 0 0 40 80 120 160 200 240 280 93196_03 TJ = 125 °C IC (A) 80 60 40 20 0 TJ = 150 °C TJ = 25 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 93196_01 IC - Continuous Collector Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature VCE (V) Fig. 3 - Typical IGBT Collector Current Characteristics VGE = 15 V Allowable Case Temperature (°C) 1000 180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 Diode DC 100 IC (A) 10 1 0.1 0.01 1 93196_02 10 100 1000 10 000 93196_04 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V IF - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GT100DA120U Vishay Semiconductors 200 175 150 125 TJ = 150 °C 2.25 Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 2.75 2.50 150 A 100 A VCE (V) IF (A) 2.00 1.75 100 75 50 25 0 0 1 2 TJ = 25 °C TJ = 125 °C 50 A 1.50 1.25 27 A 1.00 3 4 5 6 7 93196_08 20 40 60 80 100 120 140 160 93196_05 VFM (V) Fig. 5 - Typical Diode Forward Characteristics TJ (°C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 11 10 TJ = 150 °C 1 0.1 TJ = 125 °C 10 9 8 Energy (mJ) ICES (mA) 7 6 5 4 Eoff 0.01 0.001 TJ = 25 °C 0.0001 0.00001 100 Eon 3 2 1 300 500 700 900 1100 1300 93196_09 20 30 40 50 60 70 80 90 100 110 93196_06 VCES (V) IC (A) Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 6.0 5.5 5.0 TJ = 25 °C 1000 tf td(off) Switching Time (ns) td(on) Vgeth (V) 4.5 4.0 3.5 3.0 0 1 2 3 4 5 6 7 8 TJ = 125 °C 100 tr 10 20 93196_10 30 40 50 60 70 80 90 100 110 93196_07 IC (mA) Fig. 7 - Typical IGBT Threshold Voltage IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 40 35 30 310 290 270 250 230 Vishay Semiconductors Energy (mJ) trr (ns) 25 20 15 10 5 0 10 20 30 40 50 Eoff Eon 210 190 170 150 130 110 90 100 TJ = 25 °C TJ = 125 °C 1000 93196_11 Rg (Ω) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 720 V, VGE = 15 V 93196_13 dIF/dt (A/μs) Fig. 13 - Typical trr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A 10 000 45 40 Switching Time (ns) td(on) 1000 tf td(off) 35 30 Irr (A) 25 20 15 10 5 TJ = 125 °C 100 tr TJ = 25 °C 10 0 93196_12 10 20 30 40 50 93196_14 0 100 1000 Rg (Ω) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 720 V, IC = 100 A, VGE = 15 V 3000 2500 TJ = 125 °C 2000 dIF/dt (A/μs) Fig. 14 - Typical Irr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Qrr (nC) 1500 1000 500 0 100 TJ = 25 °C 1000 93196_15 dIF/dt (A/μs) Fig. 15 - Typical Qrr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GT100DA120U Vishay Semiconductors 1 Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.001 0.01 0.1 1 10 0.001 0.00001 93196_16 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) 10 ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.001 0.01 0.1 1 10 0.01 0.001 0.00001 93196_17 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors R= L VC * 50 V 1000 V 1 2 VCC D.U.T. ICM D.U.T. Rg + -V CC * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L -+ -5V D.U.T./ driver Rg + VCC Fig. 19a - Switching Loss Test Circuit 1 2 90 % 3 VC 90 % 10 % td(off) 10 % IC 5% tr td(on) tf t = 5 µs Eon Ets = (Eon + Eoff) Eoff Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 GT100DA120U Vishay Semiconductors ORDERING INFORMATION TABLE Device code Insulated Gate Bipolar Transistor (Trench IGBT), 100 A G 1 1 2 3 4 5 6 7 - T 2 100 3 D 4 A 5 120 6 U 7 Insulated Gate Bipolar Transistor (IGBT) T = Trench IGBT technology Current rating (100 = 100 A) Circuit configuration (D = Single switch with antiparallel diode) Package indicator (A = SOT-227) Voltage rating (120 = 1200 V) Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93196 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1