HFA08TA60CSPBF_10

VS-HFA08TA60CSPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES Base common cathode 2 • • • • • • 3 Anode 1 2 D2PAK Common Anode cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION PRODUCT SUMMARY VR VF at 4 A at 25 °C IF(AV) trr (typical) TJ (maximum) Qrr dI(rec)M/dt 600 V 1.8 V 2x4A 17 ns 150 °C 40 nC 280 A/μs VS-HFA08TA60CSPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A per leg continuous current, the VS-HFA08TA60CSPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TA60CSPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range Document Number: 94596 Revision: 24-Feb-10 per leg per device SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 600 4 8 25 16 25 10 - 55 to + 150 W °C www.vishay.com 1 A UNITS V For technical questions, contact: diodestech@vishay.com VS-HFA08TA60CSPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 4.0 A Maximum forward voltage VFM IF = 8.0 A IF = 4.0 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 600 TYP. 1.5 1.8 1.4 0.17 44 4.0 8.0 MAX. 1.8 2.2 1.7 3.0 300 8.0 μA pF nH V UNITS Measured lead to lead 5 mm from package body DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 4.0 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 17 28 38 2.9 3.7 40 70 280 235 MAX. 42 57 5.2 6.7 60 105 A/μs A ns UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Mounting torque Marking device Case style D2PAK SYMBOL Tlead RthJC RthJA Typical socket mount TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 2.0 0.07 MAX. 300 5.0 K/W 80 12 (10) g oz. kgf · cm (lbf · in) UNITS °C HFA08TA60CS www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94596 Revision: 24-Feb-10 VS-HFA08TA60CSPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 4 A IF - Instantaneous Forward Current (A) 100 1000 IR - Reverse Current (μA) 100 10 1 0.1 TJ = 150 °C TJ = 125 °C 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.01 0.001 0.1 0 1 2 3 4 5 6 0 94596_02 100 200 300 400 500 94596_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) TJ = 25 °C 10 1 1 94596_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Response 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 0.01 0.00001 94596_04 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94596 Revision: 24-Feb-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-HFA08TA60CSPbF Vishay High Power Products 50 45 40 35 30 25 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 40 IF = 8 A IF = 4 A HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A 200 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A 160 Qrr (nC) trr (ns) 120 80 20 100 94596_05 0 100 94596_07 1000 dIF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt 14 12 10 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF = 8 A IF = 4 A Irr (A) 8 6 4 2 0 100 IF = 8 A IF = 4 A dI(rec)M/dt (A/μs) VR = 200 V TJ = 125 °C TJ = 25 °C 1000 100 100 94596_08 1000 94596_06 dIF/dt (A/μs) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt (A/μs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94596 Revision: 24-Feb-10 VS-HFA08TA60CSPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 4 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94596 Revision: 24-Feb-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-HFA08TA60CSPbF Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED® Ultrafast Soft Recovery Diode, 2 x 4 A VS1 1 2 3 4 5 6 7 8 9 - HF 2 A 3 08 4 TA 5 60 6 C 7 S 8 TRL PbF 9 10 HPP product suffix HEXFRED® family Process designator: A = Electron irradiated Current rating (08 = 8 A) Package outline (TA = TO-220, 3 leads) Voltage rating (60 = 600 V) Circuit configuration (C = Common cathode) S = D2PAK None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 10 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94596 Revision: 24-Feb-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1