HFA08TB120STRRPBF

VS-HFA08TB120SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES Base cathode 2 • • • • • • D2PAK 1 N/C 3 Anode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count PRODUCT SUMMARY VR VF at 8 A at 25 °C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) at 125 °C IRRM (typical) 1200 V 3.3 V 8A 28 ns 150 °C 140 nC 85 A/μs 4.5 A DESCRIPTION VS-HFA08TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 1200 8 130 32 73.5 29 - 55 to + 150 W °C A UNITS V Document Number: 94046 Revision: 22-Feb-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-HFA08TB120SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 8.0 A Maximum forward voltage VFM I F = 16 A IF = 8.0 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 1200 TYP. 2.6 3.4 2.4 0.31 135 11 8.0 MAX. 3.3 4.3 3.1 10 1000 20 μA pF nH V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL trr Reverse recovery time trr1 trr2 Peak recovery current IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 28 63 106 4.5 6.2 140 335 133 85 MAX. 95 160 8.0 11 380 880 A ns UNITS Reverse recovery charge Peak rate of fall of recovery current during tb nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Marking device Case style D2PAK SYMBOL Tlead RthJC RthJA Typical socket mount TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. TYP. 2.0 0.07 MAX. 300 1.7 K/W 40 g oz. UNITS °C HFA08TB120S www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94046 Revision: 22-Feb-10 VS-HFA08TB120SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A IF - Instantaneous Forward Current (A) 100 1000 TJ = 150 °C IR - Reverse Current (μA) 100 TJ = 125 °C TJ = 100 °C 10 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0 2 4 6 8 10 0.1 TJ = 25 °C 0.01 0 94046_02 300 600 900 1200 94046_01 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 CT - Junction Capacitance (pF) TJ = 25 °C 10 1 1 94046_03 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Response 1 PDM 0.1 Single pulse (thermal response) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 0.0001 0.001 94046_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94046 Revision: 22-Feb-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-HFA08TB120SPbF Vishay High Power Products 160 140 120 VR = 160 V TJ = 125 °C TJ = 25 °C HEXFRED® Ultrafast Soft Recovery Diode, 8 A 1200 1000 800 VR = 160 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A trr (ns) 100 80 60 40 20 100 Qrr (nC) 600 400 200 0 100 IF = 8 A IF = 4 A 1000 1000 94046_05 dIF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 94046_07 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 20 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 IF = 8 A IF = 4 A 16 Irr (A) 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/μs) 100 8 4 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 10 100 94046_08 0 100 94046_06 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt (A/μs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94046 Revision: 22-Feb-10 VS-HFA08TB120SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94046 Revision: 22-Feb-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-HFA08TB120SPbF Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED® Ultrafast Soft Recovery Diode, 8 A VS1 1 2 3 4 5 6 7 8 - HF 2 A 3 08 4 TB 5 120 6 S 7 TRL PbF 8 9 HPP product suffix HEXFRED® family Process designator: A = Electron irradiated Current rating (08 = 8 A) Package outline (TB = TO-220, 2 leads) Voltage rating (120 = 1200 V) S = D2PAK None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94046 Revision: 22-Feb-10 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1