HFA120FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 120 A
FEATURES
• Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL approved file E78996
SOT-227
• Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS PRODUCT SUMMARY
VR VF (typical) trr (typical) IF(DC) at TC per leg IF(AV) at TC per leg 1200 V 2.8 V 145 ns 60 A at 86 °C 60 A at 62 °C
The dual diode series configuration (HFA120FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range per leg per module SYMBOL VR IF IFSM IFRM PD VISOL TJ, TStg TC = 86 °C TJ = 25 °C Rated VR, square wave, 20 kHz, TC = 60 °C TC = 25 °C TC = 100 °C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 1200 60 120 350 130 337 135 2500 - 55 to + 150 W V °C A UNITS V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA I F = 60 A Forward voltage VFM IF = 120 A IF = 60 A, TJ = 125 °C Reverse leakage current IRM VR = VR rated TJ = 150 °C, VR = VR rated MIN. 1200 TYP. 2.8 3.6 2.7 2.0 2.7 MAX. 4.0 5.3 75 10 μA mA V UNITS
Document Number: 94608 Revision: 22-Jul-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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HFA120FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 120 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Reverse recovery time SYMBOL trr IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = - 200 A/μs VR = 200 V TEST CONDITIONS MIN. TYP. 145 218 13 18 910 1920 MAX. UNITS ns
Peak recovery current
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque SYMBOL RthJC RthCS Flat, greased and surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.37 0.185 g Nm °C/W UNITS
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94608 Revision: 22-Jul-10
HFA120FA120P
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 120 A
IF - Instantaneous Forward Current (A)
1000 10
IR - Reverse Current (mA)
TJ = 150 °C 1 TJ = 125 °C 0.1
100
10
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.01 TJ = 25 °C
0.001
1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0001 200
94608_02
400
600
800
1000
1200
94608_01
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
ZthJC - Thermal Impedance (°C/W)
1
0.1
0.01
0.001 Single pulse (thermal resistance) 0.0001 0.00001 0.0001 0.001
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
0.01
0.1
1
94608_03
t1 - Rectangular Pulse Duration (s)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics
Allowable Case Temperature (°C)
160
300
120 DC 100 80 60 40 20 0 0 20 40 60 80 100 Square wave (D = 0.50) 80 % rated VR applied See note (1)
Average Power Loss (W)
140
250 200 150 100 50 0 0
180° 120° 90° 60° 30° RMS limit
DC
20
40
60
80
100
94608_04
IF(AV) - Average Forward Current (A)
94608_05
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Document Number: 94608 Revision: 22-Jul-10
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HFA120FA120P
Vishay Semiconductors
300 IF = 50 A VR = 200 V 250 TJ = 125 °C
HEXFRED® Ultrafast Soft Recovery Diode, 120 A
3000 2500 2000 IF = 50 A VR = 200 V
Qrr (nC)
trr (ns)
200
TJ = 125 °C 1500 1000 TJ = 25 °C 500 0 100
150 TJ = 25 °C 100
50 100
94608_06
1000
1000
dIF/dt (A/µs)
94608_07
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
40 IF = 50 A VR = 200 V 30 TJ = 125 °C
Irr (A)
20 TJ = 25 °C 10
0 100
94608_08
1000
dIF/dt (A/µs)
Fig. 8 - Typical Peak Recovery Current vs. dIF/dt
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94608 Revision: 22-Jul-10
HFA120FA120P
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 120 A
VR = 200 V
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94608 Revision: 22-Jul-10
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HFA120FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 120 A
ORDERING INFORMATION TABLE
Device code
HF
1 1 2 3 4 5 6 -
A
2
120
3
FA
4
120
5
P
6
HEXFRED® family Process designator (A = Electron irradiated) Average current (120 = 120 A) Package outline (FA = SOT-227) Voltage rating (120 = 1200 V) P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1 4
2
3
LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037
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Document Number: 94608 Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45°
0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005)
12.30 (0.484) 11.80 (0.464)
Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter
Document Number: 95036 Revision: 28-Aug-07
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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