HFA12PA120CPBF_11

VS-HFA12PA120CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A FEATURES Base common cathode 2 • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count TO-247AC 1 3 Anode Anode 2 1 2 Common cathode DESCRIPTION VS-HFA12PA120CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. The VS-HFA12PA120CPbF has basic ratings of 1200 V and 6 A per leg continuous current. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA12PA120CPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters, converters, UPS systems, and power factor correction circuits), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-247AC 2x6A 1200 V 3.0 V 26 ns 150 °C Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range per leg per device SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 1200 6 12 80 24 62.5 25 - 55 to + 150 W °C A UNITS V Document Number: 94597 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA12PA120CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 6 A Maximum forward voltage VFM I F = 12 A IF = 6 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 1200 TYP. 2.7 3.5 2.4 0.26 110 9.0 8.0 MAX. 3.0 3.9 2.8 5.0 500 14 μA pF nH V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL trr Reverse recovery time trr1 trr2 Peak recovery current IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 26 53 87 4.4 5.0 116 233 180 100 MAX. 80 130 8.0 9.0 320 585 A/μs A ns UNITS Reverse recovery charge Peak rate of fall of recovery current during tb nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC (JEDEC) SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 0.50 2.0 0.07 MAX. 300 2.0 80 12 (10) g oz. kgf · cm (lbf · in) K/W UNITS °C HFA12PA120C www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 94597 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA12PA120CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A Vishay Semiconductors Instantaneous Forward Current - IF (A) 100 1000 Reverse Current - IR (µA) TJ = 150 °C 100 125 °C 100 °C 10 10 1 1 TJ = 150°C TJ = 125°C TJ = 25°C 25 °C 0.1 0.1 0 2 4 6 0.01 0 200 400 600 800 1000 1200 1400 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage Junction Capacitance - CT (pF) TJ = 150 °C 10 1 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM t1 t2 0.1 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94597 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA12PA120CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A 110 100 90 IF = 6 A IF = 4 A 1000 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 6 A IF = 4 A 600 800 trr - (ns) 70 60 50 40 30 20 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 Qrr - (nC) 80 400 200 0 100 1000 dIF/dt - (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt - (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt 25 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 6 A IF = 4 A 10 000 20 dI(rec) M/dt - (A/µs) 1000 Irr - (A) 15 IF = 6 A IF = 4 A 10 100 VR = 200 V TJ = 125 °C TJ = 25 °C 10 100 5 0 100 1000 1000 dIF/dt - (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt - (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94597 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA12PA120CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94597 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA12PA120CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A ORDERING INFORMATION TABLE Device code VS- HF A 12 PA 120 C PbF 1 2 - 3 4 5 6 7 8 1 2 3 4 5 6 7 Vishay Semiconductors product HEXFRED® family Electron irradiated Current rating (12 = 12 A) PA = TO-247AC Voltage rating: (120 = 1200 V) Circuit configuration C = Common cathode 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95223 www.vishay.com/doc?95226 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94597 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1