HFA135NH40PBF

HFA135NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 275 A FEATURES Lug terminal anode • Very low Qrr and trr • Lead (Pb)-free • Designed and qualified for industrial level RoHS COMPLIANT BENEFITS HALF-PAK (D-67) Base cathode • Reduced RFI and EMI • Reduced snubbing DESCRIPTION HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. PRODUCT SUMMARY IF (maximum) VR IF(DC) at TC 275 A 400 V 138 A at 100 °C ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Non-repetitive avalanche energy Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM EAS PD TJ, TStg TC = 25 °C TC = 100 °C Limited by junction temperature L = 100 µH, duty cycle limited by maximum TJ TC = 25 °C TC = 100 °C TEST CONDITIONS VALUES 400 275 138 900 1.4 463 185 - 55 to + 150 mJ W °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 135 A Maximum forward voltage VFM IF = 270 A IF = 135 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS TJ = 125 °C, VR = 400 V VR = 200 V See fig. 2 See fig. 3 See fig. 1 MIN. 400 TYP. 1.06 1.2 0.96 280 6.0 MAX. 1.65 2.0 1.58 3 380 mA pF nH V UNITS From top of terminal hole to mounting plane Document Number: 94050 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 HFA135NH40PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 275 A TEST CONDITIONS TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 135 A dIF/dt = 200 A/µs VR = 200 V MIN. TYP. 77 280 7.5 15 150 2800 350 300 MAX. 120 440 14 30 780 6300 UNITS ns DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current See fig. 8 SYMBOL trr IRRM A Qrr dI(rec)M/dt nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum minimum maximum HALF-PAK module SYMBOL TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, flat, smooth and greased TEST CONDITIONS VALUES - 55 to 150 0.27 °C/W 0.05 30 1.06 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2) N·m (lbf · in) g oz. UNITS °C Mounting torque Terminal torque Case style www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94050 Revision: 01-Aug-08 HFA135NH40PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 275 A IF - Istantaneous Forward Current (A) 1000 160 140 Maximum Allowable Case Temperature (°C) 120 100 80 60 40 20 DC 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.2 0.7 1.2 1.7 2.2 2.7 3.2 0 0 50 100 150 200 250 300 350 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 TJ = 150 °C IF(AV) - DC Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current 450 400 350 TJ = 125 °C TJ = 25 °C IF = 200 A IF = 135 A IF = 50 A IR - Reverse Current (µA) 1 TJ = 125 °C 300 trr (ns) TJ = 25 °C 0.1 250 200 150 0.01 0.001 100 50 0.0001 100 200 300 400 0 100 1000 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 10 000 70 60 50 TJ = 125 °C TJ = 25 °C CT - Junction Capacitance (pF) IRRM (A) 1000 TJ = 25 °C 40 30 20 10 IF = 200 A IF = 135 A IF = 50 A 100 1 10 100 1000 0 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Document Number: 94050 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 HFA135NH40PbF Vishay High Power Products 6000 5000 4000 TJ = 125 °C TJ = 25 °C HEXFRED® Ultrafast Soft Recovery Diode, 275 A 10 000 Qrr (nC) IF = 200 A IF = 135 A IF = 50 A 3000 2000 1000 0 100 dI(rec)M/dt (A/µs) 200 A 135 A 50 A 1000 TJ = 125 °C TJ = 25 °C 1000 100 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt 1 ZthJC - Thermal Response 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94050 Revision: 01-Aug-08 HFA135NH40PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 275 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions L = 100 µH High-speed switch Rg = 25 Ω Current monitor Freewheel diode IL(PK) D.U.T. + Vd = 50 V V(AVAL) VR(RATED) Decay time Fig. 12 - Avalanche Test Circuit and Waveforms Document Number: 94050 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 HFA135NH40PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED® Ultrafast Soft Recovery Diode, 275 A HFA 1 1 2 3 4 5 6 135 2 N 3 H 4 40 5 PbF 6 - HEXFRED® family - Average current rating - N = Not isolated - H = HALF-PAK - Voltage rating (400 V) - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95020 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94050 Revision: 01-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1