HFA16TA60CPBF_11

VS-HFA16TA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS Base common cathode 2 • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 2 Common cathode 1 3 Anode Anode TO-220AB PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-220AB 2x8A 600 V 1.7 V 18 ns 150 °C Common cathode VS-HFA16TA60CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A per leg continuous current, the VS-HFA16TA60CPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TA60CPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range per leg per device SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 600 8 16 60 24 36 14 - 55 to + 150 W °C A UNITS V Document Number: 94058 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA IF = 8 A Maximum forward voltage VFM I F = 16 A IF = 8 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 600 TYP. 1.4 1.7 1.4 0.3 100 10 8.0 MAX. 1.7 2.1 1.7 5.0 500 25 μA pF nH V UNITS Measured lead to lead 5 mm from package body DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall recovery current during tb See fig. 8 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 18 37 55 3.5 4.5 65 124 240 210 MAX. 55 90 5.0 8.0 138 360 A/μs A ns UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conducting Junction to case, both legs conducting Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AB RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. RthJC 6.0 (5.0) 0.5 2.0 0.07 1.75 K/W 80 12 (10) g oz. kgf · cm (lbf · in) TYP. MAX. 300 3.5 UNITS °C HFA16TA60C www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 94058 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A Vishay Semiconductors IF - Instantaneous Forward Current (A) 100 1000 TJ = 150 °C IR - Reverse Current (µA) 100 10 1 0.1 TJ = 25 °C 0.01 0.001 TJ = 125 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 A 0 100 200 300 400 500 600 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 94058_01 VFM - Forward Voltage Drop (V) 94058_02 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) 100 A CT - Junction Capacitance (pF) TJ = 25 °C 10 1 1 94058_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 ZthJC - Thermal Response 1 PDM 0.1 Single pulse (thermal response) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94058 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A 80 IF = 16 A IF = 8.0 A IF = 4.0 A 500 60 400 Qrr (nC) trr (nS) 300 IF = 16 A IF = 8.0 A IF = 4.0 A VR = 200 V TJ = 125 °C TJ = 25 °C 40 200 20 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 100 0 100 94058_05 0 100 94058_07 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 20 10 000 16 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8.0 A IF = 4.0 A 12 dI(rec)M/dt (A/µs) VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF = 16 A IF = 8.0 A IF = 4.0 A Irr (A) 1000 8 4 0 100 94058_06 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94058 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94058 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 4 5 4 6 7 8 HF 2 - A 3 16 4 TA 5 60 6 C 7 PbF 8 Vishay Semiconductors product HEXFRED® family Electron irradiated Current rating (16 = 16 A) Package: TA = TO-220AB Voltage rating (60 = 600 V) Circuit configuration: C = Common cathode PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94058 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1