HFA16TB120PBF

HFA16TB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • • Base cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Available RoHS* COMPLIANT BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 1 Cathode 3 Anode DESCRIPTION TO-220AC PRODUCT SUMMARY VR VF at 16 A at 25 °C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) at 125 °C IRRM (typical) 1200 V 3.0 V 16 A 30 ns 150 °C 260 nC 76 A/µs 5.8 A HFA16TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the HFA16TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 1200 16 190 64 151 60 - 55 to + 150 W °C A UNITS V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94060 Revision: 25-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA16TB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 1 6 A Maximum forward voltage VFM IF = 3 2 A IF = 16 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 1200 TYP. 2.5 3.2 2.3 0.75 375 27 8.0 MAX. 3.0 3.93 2.7 20 2000 40 µA pF nH V UNITS Measured lead to lead 5 mm from package body DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 1 6 A dIF/dt = 200 A/µs VR = 200 V MIN. TYP. 30 90 164 5.8 8.3 260 680 120 76 MAX. 135 245 10 15 675 1838 A/µs A ns UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 0.50 2.0 0.07 MAX. 300 0.83 80 12 (10) g oz. kgf · cm (lbf · in) K/W UNITS °C HFA16TB120 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94060 Revision: 25-Jul-08 HFA16TB120PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 16 A 1000 TJ = 150°C 100 100 10 T = 125°C J 1 TJ = 25°C 0.1 10 0.01 0 200 400 600 800 1000 A 1200 T = 150°C J T = 125°C J T = 25°C J Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1 1000 100 T J = 25°C 10 0.1 0 2 4 6 8 1 1 10 100 1000 10000 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) Notes: t1 t2 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94060 Revision: 25-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA16TB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A 1600 1400 V R = 200V T J = 125°C T J = 25°C 270 220 If = 16 A If = 8 A trr (ns) 1200 1000 800 If = 16A If = 8A 170 120 600 400 70 VR = 200V TJ = 125°C TJ = 25°C 200 0 100 20 100 1000 1000 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 30 10000 V R = 200V T J = 125°C T J = 25°C 25 V R = 200V T J = 125 °C T J = 25°C 20 If = 16 A If = 8 A 1000 If = 16A If = 8A 15 10 100 5 0 100 1000 10 100 1000 Fig. 6 - Typical Recovery Current vs. diF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94060 Revision: 25-Jul-08 HFA16TB120PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 16 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95221 http://www.vishay.com/doc?95224 Document Number: 94060 Revision: 25-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1