VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED® Ultrasoft Soft Recovery Diode, 16 A
FEATURES
• • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level
BENEFITS
Base cathode 2
• • • • •
Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count
DESCRIPTION
1 Cathode 3 Anode
TO-220AC
PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-220AC 16 A 1200 V 3.0 V 30 ns 150 °C Single die
VS-HFA16TB120PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16TB120PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TB120PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 1200 16 190 64 151 60 - 55 to + 150 W °C A UNITS V
Document Number: 94060 Revision: 24-May-11
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VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED® Ultrasoft Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA I F = 16 A Maximum forward voltage VFM I F = 32 A IF = 16 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 1200 TYP. 2.5 3.2 2.3 0.75 375 27 8.0 MAX. 3.0 3.93 2.7 20 2000 40 μA pF nH V UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 16 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 30 90 164 5.8 8.3 260 680 120 76 MAX. 135 245 10 15 675 1838 A/μs A ns UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 0.50 2.0 0.07 MAX. 300 0.83 80 12 (10) g oz. kgf · cm (lbf · in) K/W UNITS °C
HFA16TB120
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For technical questions within your region, please contact one of the following: Document Number: 94060 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
HEXFRED® Vishay Semiconductors Ultrasoft Soft Recovery Diode, 16 A
IF - Instantaneous Forward Current (A)
100
1000 TJ = 150 °C
IR - Reverse Current (µA)
100 TJ = 125 °C
10 TJ = 150 °C TJ = 125 °C TJ = 25 °C
10
1
1
TJ = 25 °C
0.1
0.1 0 2 4 6 8
0.01 0
94060_02
200
400
600
800
1000
1200
94060_01
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
1 1
94060_03
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
ZthJC - Thermal Response
0.1 Single pulse (thermal response)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
PDM
t1 t2
Notes: 1. Duty factor D = t1/t2 2. Peak T J = PDM x ZthJC + T C
0.01 0.00001
94060_04
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94060 Revision: 24-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED® Ultrasoft Soft Recovery Diode, 16 A
270
1600 1400 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A
220 IF = 16 A IF = 8 A
1200
trr (ns)
170
Qrr (nC)
VR = 200 V TJ = 125 °C TJ = 25 °C 1000
1000 800 600 400
120
70
200 0 100
94057_07
20 100
94060_05
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
30 25 20 VR = 200 V TJ = 125 °C TJ = 25 °C
10 000
VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A
dI(rec)M/dt (A/µs)
IRR (A)
IF = 16 A IF = 8 A
1000
15 10 5 0 100
100
1000
10 100
94057_08
1000
94057_06
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. diF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
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For technical questions within your region, please contact one of the following: Document Number: 94060 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
HEXFRED® Vishay Semiconductors Ultrasoft Soft Recovery Diode, 16 A
VR = 200 V
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94060 Revision: 24-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED® Ultrasoft Soft Recovery Diode, 16 A
ORDERING INFORMATION TABLE
Device code
VS1 1
2 3 4 4 5 4 6 7
HF
2 -
A
3
16
4
TB
5
120 PbF
6 7
Vishay Semiconductors product HEXFRED® family Electron irradiated Current rating (16 = 16 A) Package: TB = TO-220AC Voltage rating (120 = 1200 V) PbF = Lead (Pb)-free
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95224
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Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1
(6) E E2 (7) Q
A
(6) D
Lead tip
View A - A
SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E
MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51
INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414
NOTES
SYMBOL E1 E2 e e1
MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00
INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118
NOTES 6 7
4
H1 L
6, 7
4
L1 L3
2
4 3
L4 ØP Q
2
6 3, 6
90° to 93°
90° to 93°
Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 Revision: 07-Mar-11
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Document Number: 91000 Revision: 11-Mar-11
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