VS-HFA25TB60PbF
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 25 A
FEATURES
• • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level
BENEFITS
Base cathode
• • • • •
Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count
DESCRIPTION
1 Cathode 3 Anode
TO-220AC
PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-220AC 25 A 600 V 1.7 V 23 ns 150 °C Single die
VS-HFA25TB60PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the VS-HFA25TB60PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 600 25 225 100 125 50 - 55 to + 150 W °C A UNITS V
Document Number: 94065 Revision: 24-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 μA I F = 25 A Maximum forward voltage VFM I F = 50 A IF = 25 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 600 TYP. 1.3 1.5 1.3 1.5 600 55 8.0 MAX. 1.7 2.0 1.7 20 2000 100 μA pF nH V UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 25 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 23 50 105 4.5 8.0 112 420 250 160 MAX. 75 160 10 15 375 1200 A/μs A ns UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063” from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 0.5 2.0 0.07 MAX. 300 1.0 80 12 (10) g oz. kgf · cm (lbf · in) K/W UNITS °C
HFA25TB60
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For technical questions within your region, please contact one of the following: Document Number: 94065 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 25 A
IF - Instantaneous Forward Current (A)
1000
10 000 TJ = 150 °C
IR - Reverse Current (µA)
1000 100 10 1 0.1 0.01 TJ = 25 °C TJ = 125 °C
10
TJ = 150 °C TJ = 125 °C TJ = 25 °C
1 0.6
1.0
1.4
1.8
2.2
2.6
94065_02
0
100
200
300
400
500
600
94065_01
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
TJ = 25 °C 100
10 1
94065_03
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
ZthJC - Thermal Response
1
PDM t1
0.1
Single pulse (thermal response) 0.01 0.00001 0.0001
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01
t2
Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1
94065_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94065 Revision: 24-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 25 A
140 120 100
VR = 200 V TJ = 125 °C TJ = 25 °C
1400 1200 1000 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 50 A IF = 25 A IF = 10 A
trr (ns)
Qrr (nC)
80 60 40
IF = 50 A IF = 25 A IF = 10 A
800 600 400 200
20 100
94065_05
1000
0 100
94065_07
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
30 25 20 VR = 200 V TJ = 125 °C TJ = 25 °C
10 000 VR = 200 V TJ = 125 °C TJ = 25 °C
15 10 5 0 100
dI(rec)M/dt (A/µs)
IRR (A)
IF = 20 A IF = 25 A IF = 10 A
1000
IF = 50 A IF = 25 A IF = 10 A
1000
100 100
94065_08
1000
94065_06
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Fig. 6 - Typical Recovery Current vs. dIF/dt
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For technical questions within your region, please contact one of the following: Document Number: 94065 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 25 A
VR = 200 V
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94065 Revision: 24-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 25 A
ORDERING INFORMATION TABLE
Device code
VS1 1
2 3 4 4 5 4 6 7
HF
2 -
A
3
25
4
TB
5
60
6
PbF
7
Vishay Semiconductors product HEXFRED® family Electron irradiated Current rating (25 = 25 A) Package: TB = TO-220AC Voltage rating (60 = 600 V) PbF = Lead (Pb)-free
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95224
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Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1
(6) E E2 (7) Q
A
(6) D
Lead tip
View A - A
SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E
MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51
INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414
NOTES
SYMBOL E1 E2 e e1
MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00
INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118
NOTES 6 7
4
H1 L
6, 7
4
L1 L3
2
4 3
L4 ØP Q
2
6 3, 6
90° to 93°
90° to 93°
Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 Revision: 07-Mar-11
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Document Number: 91000 Revision: 11-Mar-11
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