HFA25TB60SPBF

HFA25TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead (Pb)-free Designed and qualified for Q101 level Available RoHS* COMPLIANT Base cathode 2 BENEFITS • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 1 N/C 3 Anode D2PAK DESCRIPTION HFA25TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the HFA25TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR VF at 25 A at 25 °C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) IRRM 600 V 1.7 V 25 A 23 ns 150 °C 112 nC 250 A/µs 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 600 25 225 100 125 50 - 55 to + 150 W °C A UNITS V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94066 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA25TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 2 5 A Maximum forward voltage VFM IF = 5 0 A IF = 25 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 600 TYP. 1.3 1.5 1.3 1.5 600 55 8.0 MAX. 1.7 2.0 1.7 20 2000 100 µA pF nH V UNITS Measured lead to lead 5 mm from package body DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall recovery current during tb See fig. 8 SYMBOL trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 25 A dIF/dt = 200 A/µs VR = 200 V MIN. TYP. 23 50 105 4.5 8.0 112 420 250 160 MAX. 75 160 10 15 375 1200 A/µs A ns UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Marking device Case style D2PAK SYMBOL Tlead RthJC RthJA Typical socket mount TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. TYP. 2.0 0.07 MAX. 300 1.0 K/W 80 g oz. UNITS °C HFA25TB60S www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94066 Revision: 22-Oct-08 HFA25TB60SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 25 A 10000 1000 100 10 100 TJ = 150°C TJ = 125°C 1 0.1 0.01 0 100 200 300 400 500 TJ = 25°C A 600 Reverse Voltage - V R (V) TJ = 150°C TJ = 125°C T = 25°C J 10 1000 Fig. 2 - Typical Reverse Current vs. Reverse Voltage A T = 25°C J 100 1 0.6 1.0 1.4 1.8 2.2 2.6 A 10 1 10 100 A 1000 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94066 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA25TB60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A 140 VR = 200V TJ = 125°C TJ = 25°C 120 1400 VR = 200V TJ = 125°C TJ = 25°C 1200 1000 100 I F = 50 A I F = 25 A I F = 10 A 800 80 I F = 50 A I F = 25 A IF = 10 A 600 60 400 40 200 20 100 A di f /dt - (A/µs) 1000 0 100 A di f /dt - (A/µs) 1000 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 30 VR = 200V TJ = 125°C TJ = 25°C 25 10000 VR = 200V TJ = 125°C TJ = 25°C 20 I F = 50 A I F = 25 A I F = 10 A I F = 50 A I F = 25 A I F = 10 A 15 1000 10 5 0 100 A di f /dt - (A/µs) 1000 100 100 A di f /dt - (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt 1000 Fig. 6 - Typical Recovery Current vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94066 Revision: 22-Oct-08 HFA25TB60SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 25 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 Document Number: 94066 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1