HFA60FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL approved file E78996
SOT-227
• Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS PRODUCT SUMMARY
VR VF (typical) trr (typical) IF(DC) at TC 1200 V 2.2 V 123 ns 30 A at 110 °C
The dual diode series configuration (HFA60FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD VISOL TJ, TStg TC = 110 °C TJ = 25 °C Rated VR, square wave, 20 kHz, TC = 60 °C TC = 25 °C TC = 100 °C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 1200 30 350 110 216 86 2500 - 55 to + 150 W V °C A UNITS V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA I F = 30 A Forward voltage VFM I F = 60 A IF = 60 A, TJ = 150 °C Reverse leakage current IRM VR = VR rated TJ = 150 °C, VR = VR rated MIN. 1200 TYP. 2.2 2.7 3.4 1.0 2.7 MAX. 3.0 3.8 75 10 μA mA V UNITS
Document Number: 94609 Revision: 22-Jul-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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HFA60FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 60 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Reverse recovery time SYMBOL trr IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = - 200 A/μs VR = 200 V TEST CONDITIONS MIN. TYP. 123 188 12 17 675 1500 MAX. UNITS ns
Peak recovery current
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque SYMBOL RthJC RthCS Flat, greased and surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.58 0.29 g Nm °C/W UNITS
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94609 Revision: 22-Jul-10
HFA60FA120P
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A
1000
Instantaneous Forward Current - IF (A)
10 150°C
100
Reverse Current - IR (mA)
1
125°C
0.1
0.01 25°C 0.001
10 Tj = 150°C Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward Voltage Drop - VFM (V)
0.0001 200 400 600 800 1000 1200
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1
Thermal Impedance ZthJC (°C/W)
D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001
0.0001 1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics
160
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
120 100 80 60 40 20 0
180° 120° 90° 60° 30°
140 120 100 DC 80 60 40 20 0 0 10 20 30 40 50 60 Average Forward Current - IF(AV)(A) 70
Square wave (D=0.50) 80% rated Vr applied see note (1)
DC
RMS Limit
0
10
20
30
40
50
Average Forward Current - IF(AV) (A)
Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Document Number: 94609 Revision: 22-Jul-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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HFA60FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 60 A
2500
Vr = 200V
250
Vr = 200V
2000
200
If = 50A, Tj = 125°C
If = 50A, Tj = 125°C
150
If = 50A, Tj = 25°C
Q rr (nC)
1500
t rr (ns)
1000
If = 50A, Tj = 25°C
100
500
50 100
1000
0 100
1000
dIF /dt (A/μs)
dIF /dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
40
Vr = 200V
30
If = 50A, Tj = 125°C
I rr (A)
20
If = 50A, Tj = 25°C
10
0 100
1000
dIF /dt (A/μs)
Fig. 8 - Typical Peak Recovery Current vs. dIF/dt
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94609 Revision: 22-Jul-10
HFA60FA120P
HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A
VR = 200 V
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94609 Revision: 22-Jul-10
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HFA60FA120P
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 60 A
ORDERING INFORMATION TABLE
Device code
HF
1 1 2 3 4 5 6 -
A
2
60
3
FA
4
120
5
P
6
HEXFRED® family Process designator (A = Electron irradiated) Average current (60 = 60 A) Package outline (FA = SOT-227) Voltage rating (120 = 1200 V) P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1 4
2
3
LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94609 Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45°
0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005)
12.30 (0.484) 11.80 (0.464)
Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter
Document Number: 95036 Revision: 28-Aug-07
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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