HFA90NH40PbF
Vishay High Power Products
HEXFRED® Ultrafast Soft Recovery Diode, 210 A
FEATURES
Lug terminal anode
• Very low Qrr and trr • Lead (Pb)-free • Designed and qualified for industrial level
RoHS
COMPLIANT
BENEFITS
Base cathode
• Reduced RFI and EMI • Reduced snubbing
HALF-PAK (D-67)
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
PRODUCT SUMMARY
IF (maximum) VR IF(DC) at TC 210 A 400 V 106 A at 100 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Non-repetitive avalanche energy Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM EAS PD TJ, TStg TC = 25 °C TC = 100 °C Limited by junction temperature L = 100 µH, duty cycle limited by maximum TJ TC = 25 °C TC = 100 °C TEST CONDITIONS VALUES 400 210 106 600 1.4 329 132 - 55 to + 150 mJ W °C A UNITS V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 9 0 A Maximum forward voltage VFM IF = 180 A IF = 90 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS TJ = 125 °C, VR = 400 V VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 400 TYP. 1.06 1.2 0.96 0.6 180 7.0 MAX. 1.45 1.67 1.23 2 260 mA pF nH V UNITS
From top of terminal hole to mounting plane
Document Number: 94044 Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
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HFA90NH40PbF
Vishay High Power Products
HEXFRED® Ultrafast Soft Recovery Diode, 210 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current See fig. 8 SYMBOL trr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 9 0 A dIF/dt = 200 A/µs VR = 200 V TEST CONDITIONS MIN. TYP. 90 158 9 15 420 1200 370 270 MAX. 140 240 17 30 1100 3200 UNITS ns
IRRM Qrr dI(rec)M/dt
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum minimum maximum HALF-PAK module Non-lubricated threads SYMBOL TJ, TStg RthJC RthCS DC operation See fig. 4 Mounting surface, flat, smooth and greased TEST CONDITIONS VALUES - 55 to 150 0.38 °C/W 0.05 30 1.06 3 (26.5) 4 (35.4) 3.4 (30) 5 (44.2) N⋅m (lbf ⋅ in) g oz. UNITS °C
Mounting torque
Terminal torque Case style
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94044 Revision: 01-Aug-08
HFA90NH40PbF
HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 210 A
10000 150°C 1000
Reverse Current - IR (μA)
100 10 1 0.1 0.01 0.001 0.0001
125°C
1000
25°C
Instantaneous Forward Current - IF (A)
100
200
300
400
100
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
A
10
Tj = 150°C Tj = 125°C
Junction Capacitance - CT (pF)
T (p
)
10000
TJ = 25°C
1000
p
Tj = 25°C
1 0.0 0.5 1.0 1.5 2.0 2.5 3.0
100 1 10 100 Reverse Voltage - VR (V) 1000
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Max. Allowable Case Temperature (°C)
160 140 120 100 80 60 40 20 0 0 50 100 150 200 250
DC Forward Current - IF(AV) (A)
DC
Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current
Document Number: 94044 Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
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HFA90NH40PbF
Vishay High Power Products
HEXFRED® Ultrafast Soft Recovery Diode, 210 A
240
4500 4000
200
200A, 125°C
3500
200A, 125°C
3000
160
t rr (ns)
90A, 125°C
Qrr (nC)
2500 2000
90A, 125°C
40A, 125°C
120
200A, 25°C 90A, 25°C
40A, 125°C
1500 1000
200A, 25°C 90A, 25°C
80
40A, 25°C
500 0 100
40A, 25°C
40 100
dIF/ dt (A/μs)
1000
1000
dIF/ dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
100
10000
200A, 125°C 90A, 125°C 40A, 125°C
10
200A, 25°C 90A, 25°C 40A, 25°C
dI (rec)M/ dt (A/μs)
I RRM (A)
1000
40A, 25°C 90A, 25°C
200A, 25°C
200A, 125°C 90A, 125°C 40A, 125°C
1 100
dIF/ dt (A/μs)
1000
100 100
1000
dIF/ dt (A/μs)
Fig. 6- Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94044 Revision: 01-Aug-08
HFA90NH40PbF
HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 210 A
1
Thermal Response (ZthJC )
D = 0.50 0.33 0.1 0.25 0.17 0.08
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-005
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
VR = 200 V
0.01 Ω L = 70 µH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions Document Number: 94044 Revision: 01-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5
HFA90NH40PbF
Vishay High Power Products
HEXFRED® Ultrafast Soft Recovery Diode, 210 A
IL(PK) High-speed switch Rg = 25 Ω Current monitor Freewheel diode
L = 100 µH
D.U.T.
+ Vd = 50 V V(AVAL) VR(RATED)
Decay time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
HFA
1 1 2 3 4 5 6
90
2
N
3
H
4
40
5
PbF
6
- HEXFRED® family - Average current rating - N = Not isolated - H = HALF-PAK - Voltage rating (400 V) - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95020
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94044 Revision: 01-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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