HFB12PA120CPBF

HFA12PA120C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A FEATURES Base common cathode 2 • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS 1 3 Anode Anode 2 1 2 Common cathode TO-247AC • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA12PA120C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. The HFA12PA120C has basic ratings of 1200 V and 6 A per leg continuous current. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA12PA120C is ideally suited for applications in power supplies and power conversion systems (such as inverters, converters, UPS systems, and power factor correction circuits), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR VF at 6 A at 25 °C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) at 125 °C IRRM (typical) 1200 V 3.0 V 2x6A 26 ns 150 °C 116 nC 100 A/µs 4.4 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range per leg per device SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 1200 6 12 80 24 62.5 25 - 55 to + 150 W °C A UNITS V Document Number: 93914 Revision: 25-Aug-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA12PA120C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 µA IF = 6 A Maximum forward voltage VFM IF = 1 2 A IF = 6 A, TJ = 125 °C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 1200 TYP. 2.7 3.5 2.4 0.26 110 9.0 8.0 MAX. 3.0 3.9 2.8 5.0 500 14 µA pF nH V UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL trr Reverse recovery time trr1 trr2 Peak recovery current IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/µs VR = 200 V MIN. TYP. 26 53 87 4.4 5.0 116 233 180 100 MAX. 80 130 8.0 9.0 320 585 A/µs A ns UNITS Reverse recovery charge Peak rate of fall of recovery current during tb nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC (JEDEC) SYMBOL Tlead RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. 6.0 (5.0) TYP. 0.50 2.0 0.07 MAX. 300 2.0 80 12 (10) g oz. kgf · cm (lbf · in) K/W UNITS °C HFA12PA120C www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93914 Revision: 25-Aug-08 HFA12PA120C HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 6 A 1000 100 TJ = 150°C 100 Reverse Current - IR (µA) 125°C 100°C 10 1 25°C 0.1 10 Instantaneous Forward Current - IF (A) 0.01 0 200 400 600 800 1000 1200 1400 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 100 T = 150°C J T = 125°C J T = 25°C J Junction Capacitance - CT (pF) 1 T = 25°C J 10 0.1 0 2 4 Forward Voltage Drop - VFM (V) 6 1 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance Z thJC (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM t1 t2 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93914 Revision: 25-Aug-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA12PA120C Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A 110 100 90 80 trr - ( ns ) IF = 6 A IF = 4 A 1000 VR = 200V TJ = 125˚C TJ = 25˚C 800 IF = 6 A IF = 4 A 70 60 50 40 30 20 100 dif /dt - (A/µs ) VR = 200V TJ = 125˚C TJ = 25˚C Qrr - ( nC ) 600 400 200 1000 0 100 dif /dt - (A/µs ) 1000 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 25 10000 20 VR = 200V TJ = 125˚C TJ = 25˚C IF = 6 A IF = 4 A 15 Irr-(A) 10 di(REC) M/dt - (A/µs ) 1000 IF = 6 A IF = 4 A 100 VR = 200V TJ = 125˚C TJ = 25˚C 5 0 100 dif /dt - (A/µs ) 1000 10 100 dif /dt - (A/µs ) 1000 Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93914 Revision: 25-Aug-08 HFA12PA120C HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 6 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93914 Revision: 25-Aug-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 HFA12PA120C Vishay High Power Products ORDERING INFORMATION TABLE Device code HEXFRED® Ultrafast Soft Recovery Diode, 2 x 6 A HF 1 1 2 - A 2 12 3 PA 4 120 5 C 6 7 HEXFRED® family Process designator: A = Subs. electron irradiated B = Subs. platinum Current rating (12 = 12 A) Package outline (PA = TO-247, 3 pins) Voltage rating (120 = 1200 V) Configuration (C = Center tap common cathode) None = Standard production PbF = Lead (Pb)-free 3 4 5 6 7 LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95223 http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93914 Revision: 25-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1