IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
D
FEATURES
100 0.16
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
D2PAK (TO-263)
DESCRIPTION
G GD S S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 100 ± 20 14 10 56 0.59 0.025 69 14 8.8 88 3.7 5.5 - 55 to + 175 300d UNIT V
A
W/°C mJ A mJ W V/ns °C
EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91020 S11-1046-Rev. C, 30-May-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF530S, SiHF530S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC TYP. MAX. 62 40 1.7 °C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 8.4 Ab Ab VDS = 50 V, ID = 8.4
100 2.0 5.1
0.12 -
4.0 ± 100 25 250 0.16 -
V V/°C V nA μA S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
670 250 60 10 34 23 24 4.5 7.5
26 5.5 11 nH ns nC pF
VGS = 10 V
ID = 14 A, VDS = 80 V, see fig. 6 and 13b
-
VDD = 50 V, ID = 14 A, Rg = 12 , RD = 3.6 , see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
G
S
-
150 0.85
14 A 56 2.5 280 1.7 V ns μC
G
S
TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91020 S11-1046-Rev. C, 30-May-11
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IRF530S, SiHF530S
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
ID, Drain Current (A)
ID, Drain Current (A)
101
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top
25 °C 101 175 °C
100
4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 100 101
20 µs Pulse Width VDS = 50 V 4
91020_03
5
6
7
8
9
10
91020_01
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C
RDS(on), Drain-to-Source On Resistance (Normalized)
ID, Drain Current (A)
101
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top
3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID = 14 A VGS = 10 V
4.5 V
100 20 µs Pulse Width TC = 175 °C 10-1 100 101
0.0 - 60- 40 - 20 0
20 40 60 80 100 120 140 160 180
91020_02
VDS, Drain-to-Source Voltage (V)
91020_04
TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91020 S11-1046-Rev. C, 30-May-11
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IRF530S, SiHF530S
Vishay Siliconix
1400 1200
Capacitance (pF)
1000 800 600 400 200 0 100
ISD, Reverse Drain Current (A)
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss
101
175 °C 25 °C
Coss
Crss
100 VGS = 0 V
101
0.4
91020_07
0.8
1.2
1.6
2.0
91020_05
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID = 14 A VDS = 80 V
103
5
16
2
Operation in this area limited by RDS(on) 10 µs 100 µs 1 ms 10 ms
ID, Drain Current (A)
VDS = 50 V 12 VDS = 20 V
102
5 2
10
5 2
8
4
For test circuit see figure 13
1
5 2
0 0
91020_06
0.1 5 10 15 20 25
91020_08
TC = 25 °C TJ = 175 °C Single Pulse 0.1
2 5
1
2
5
10
2
5
102
2
5
103
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91020 S11-1046-Rev. C, 30-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF530S, SiHF530S
Vishay Siliconix
VDS 14 VGS 12 Rg
RD
D.U.T. + - VDD
ID, Drain Current (A)
10 8 6 4 2 0 25 50 75 100 125 150 175 VDS 90 % 10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
91020_09
TC, Case Temperature (°C)
10 % VGS td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (ZthJC)
1
0 - 0.5 0.2 0.1 PDM t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10
0.1
0.05 0.02 0.01
10-2 10-5
91020_11
10-4
10-3
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91020 S11-1046-Rev. C, 30-May-11
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IRF530S, SiHF530S
Vishay Siliconix
L Vary tp to obtain required IAS Rg VDS tp VDD D.U.T I AS 10 V tp 0.01 Ω IAS + V DD VDS VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
200
EAS, Single Pulse Energy (mJ)
160
ID 5.7 A 9.9 A Bottom 14 A Top
120
80
40 VDD = 25 V 25 50 75 100 125 150 175
0
91020_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 kΩ 12 V 0.2 µF 0.3 µF
VGS QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91020 S11-1046-Rev. C, 30-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF530S, SiHF530S
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
D.U.T.
+
-
-
+
Rg
• • • •
dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va
D.U.T. lSD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices
ISD
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91020.
Document Number: 91020 S11-1046-Rev. C, 30-May-11
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Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A) 3 E 4 L1 4 4 A A c2 Gauge plane 0° to 8° D 1 L2 B B 2 C 3 C 5 H L3 Detail A L4 Detail “A” Rotated 90° CW scale 8:1 L A1 H B
B Seating plane
2 x b2 2xb 0.010 M A M B 2xe c
A
E ± 0.004 M B 5 b1, b3 Base metal
Plating
D1
4
(c)
c1
5
(b, b2) Lead tip Section B - B and C - C Scale: none E1 View A - A 4
MILLIMETERS DIM. A A1 b b1 b2 b3 c c1 c2 D MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.38 MAX. 4.83 0.25 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 MIN.
INCHES MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 DIM. D1 E E1 e H L L1 L2 L3 L4
MILLIMETERS MIN. 6.86 9.65 6.22 2.54 BSC 14.61 1.78 15.88 2.79 1.65 1.78 0.25 BSC 4.78 5.28 MAX. 10.67 MIN.
INCHES MAX. 0.420 -
0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.330
0.270 0.380 0.245 0.100 BSC 0.575 0.070 -
0.625 0.110 0.066 0.070
0.010 BSC 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364 Revision: 15-Sep-08
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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