IRF634NS

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 34 6.5 16 Single 250 0.435 FEATURES • • • • • • • • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) TO-220 D S G D G D2PAK (TO-263) S N-Channel MOSFET GD S Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF634NL/SiHF634NL) is available for low-profile application. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF634NPbF SiHF634N-E3 IRF634N SiHF634N D2PAK (TO-263) IRF634NSPbF SiHF634NS-E3 IRF634NS SiHF634NS D2PAK (TO-263) IRF634NSTRLPbFa SiHF634NSTL-E3a IRF634NSTRLa SiHF634NSTLa D2PAK (TO-263) IRF634NSTRRPbFa SiHF634NSTR-E3a IRF634NSTRRa SiHF634NSTRa I2PAK (TO-262) IRF634NLPbF SiHF634NL-E3 - Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 1 EAS IAR EAR VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 250 ± 20 8.0 5.6 32 0.59 110 4.8 8.8 W/°C mJ A mJ A UNIT V WORK-IN-PROGRESS IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torqued for 10 s 6-32 or M3 screw SYMBOL TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg LIMIT 88 3.8 7.3 - 55 to + 175 300c 10 1.1 UNIT W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V. c. 1.6 mm from case. d. This is only applied to TO-220 package. e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambienta Maximum Junction-to-Ambient (PCB Mount)b Maximum Junction-to-Case (Drain) Case-to-Sink, Flat, Greased Surfacea SYMBOL RthJA RthJA RthJC RthCS TYP. 0.50 MAX. 62 40 1.7 °C/W UNIT Notes a. This is only applied to TO-220 package. b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 125 V, ID = 4.8 A, RG = 1.3 Ω, see fig. 10b VGS = 10 V VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 4.8 A, VDS = 200 V, see fig. 6 and 13b 620 84 23 8.4 16 28 15 34 6.5 16 ns nC pF VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 4.8 Ab VDS = 50 V, ID = 4.8 Ab 250 2.0 5.4 0.33 4.0 ± 100 25 250 0.435 V V/°C V nA µA Ω S SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT www.vishay.com 2 Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Dynamic Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT LD LS Between lead, 6 mm (0.25") from package and center of die contact D G 4.5 7.5 nH - S - 130 650 8.0 A 32 1.3 200 980 V ns nC G S TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 102 VGS Top 102 ID, Drain-to-Source Current (A) 15 V 10 V 8.0 V 7.0 V 10 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) 10 1 4.5 V 0.1 20 µs Pulse Width TC = 25 °C 1 10 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 4.5 V 1 10-2 0.1 91033_01 0.1 0.1 91033_02 20 µs Pulse Width TC = 175 °C 1 10 102 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 3 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 102 1200 1000 Ciss ID, Drain-to-Source Current (A) 10 TJ = 175 °C C, Capacitance (pF) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 800 Coss 600 400 200 0 Crss 1 TJ = 25 °C 20 µs Pulse Width VDS = 50 V 5.0 6.0 7.0 8.0 9.0 0.1 4.0 91033_03 1 91033_05 10 102 103 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage RDS(on), Drain-to-Source On Resistance (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS, Gate-to-Source Voltage (V) ID = 7.9 A VGS = 10 V 20 ID = 4.8 A VDS = 200 V VDS = 125 V 16 12 VDS = 50 V 8 4 For test circuit see figure 13 0.0 - 60 - 40- 20 0 20 40 60 80 100 120 140 160 180 0 0 91033_06 10 20 30 40 91033_04 TJ, Junction Temperature (°C) QG, Total Gate Charge (nC) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 102 10.0 ISD, Reverse Drain Current (A) 10 TJ = 175 °C ID, Drain Current (A) VGS = 0 V 1.2 91033_09 8.0 6.0 1 TJ = 25 °C 4.0 2.0 0.1 0.2 91033_07 0.4 0.6 0.8 1.0 0.0 25 50 75 100 125 150 175 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS VGS 102 D.U.T. + - VDD ID, Drain-to-Source Current (A) Operation in this area limited by RDS(on) RG 10 V 10 100 µs Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 1 TC = 25 °C TJ = 175 °C Single Pulse 1 10 102 1 ms VDS 90 % 10 ms 103 10 % VGS td(on) tr td(off) tf 0.1 91033_08 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10b - Switching Time Waveforms Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 5 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 10 Thermal Response (ZthJC) 1 0 − 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-3 10-2 0.1 0.1 Single Pulse (Thermal Response) 10-2 10-5 91033_11 10-4 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T IAS 0.01 Ω + A - VDD IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) 200 160 ID 2.0 A 3.4 A Bottom 4.8 A Top 120 80 40 0 25 50 75 100 125 150 175 91033_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Current regulator Same type as D.U.T. QG 12 V 0.2 µF 0.3 µF 50 kΩ VGS QGS QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91033. Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1